骨断裂力学概述

本文涉及近年来骨断裂力学的发展成果.对建立在张开型和剪切型断裂能基础上的方法作了回顾,并讨论了密度、试件厚度和裂纹速度对骨断裂的影响.最后简述了人股骨的试验研究.      

压电材料平面裂纹尖端场的杂交应力有限元分析

基于复势理论和杂交变分原理建立了一种适用于力电耦合分析的杂交应力有限元模 型. 给出了建立刚度矩阵的主要公式和推导过程，单元内的位移场和应力场采用满足平 衡方程的复变函数级数解，假设的复变函数级数解事先精确满足裂纹的无应力和电位移法向 分量为零的条件，单元外边界的位移场假设按抛物线变化, 单元的刚度矩阵采用Gauss积分的方法得出. 通过对力电耦合裂尖场的数值计算验证了程序 的正确性和单元的有效性，同时也用所得结果校验了理论解.     

On the influence of singular-type finite elements on the critical force in studying the buckling of a circular plate with a crack

The axisymmetric buckling (delamination) of a circular disk (plate) with a penny-shaped crack is analyzed using a continuum model, piecewise-homogeneous model, and the three-dimensional linearized theory of stability. The FEM is used. The analysis is carried out using various singular and ordinary finite elements. The numerical results obtained indicate that it is not necessary to use singular finite elements to solve the problem Published in Prikladnaya Mekhanika, Vol. 43, No. 9, pp. 120–129, September 2007.     

Two-parameter failure criterion for elastoplastic bodies with mode I cracks

The generalized Dugdale crack model is used to formulate two-parameter failure criteria for the cases of quasibrittle state and developed plastic zones at a mode I crack tip. The failure criteria relate the fracture strength characteristics and the stress mode at the crack tip through the plastic constraint factor. The critical state of bodies with cracks under uni-and biaxial loading is analyzed in the cases of plane stress and plane strain using the Tresca and von Mises yield criteria. A small-scale yield criterion, which is an analytic relation between the critical stress intensity factor and T-stresses, is established __________ Translated from Prikladnaya Mekhanika, Vol. 43, No. 7, pp. 47–57, July 2007.     

On unilateral contact of two plates aligned at an angle to each other

The contact problem for two elastic plates aligned at a prescribed angle to each other is considered. The set of contact points is assumed to be unknown in advance and to be determined only after the problem is solved. Various formulations of the problem are given, and their equivalence is proved. A complete set of boundary conditions fulfilled on the contact domain is found, and the character of satisfaction of these conditions is described. The asymptotic properties of solutions are studied for rigidity parameters of the contacting plates tending to infinity. __________ Translated from Prikladnaya Mekhanika i Tekhnicheskaya Fizika, Vol. 49, No. 4, pp. 42–58, July–August, 2008.     

基于光二分路器的多路分光比的设计

提出一种设计多路分光器分光比的新方法--分解组合法.将多路分光器视为光二分路器的各种组合,分解后,引入等效光纤长度的新概念,将分光损耗对等折算为一定长度的光纤损耗,再利用光二分路器分光比的简便设计方法,巧妙地设计出多路分光器的各路分光比.     

A large class of binary ZCZ sequence families constructed by period doubling

In an Approximately Synchronized Code Division Multiple Access （AS-CDMA） communication system, a family with large number of Zero Correlation Zone （ZCZ） sequences is desired, which can satisfy the rapid increase of users. This paper presents a method to generate a （2L,2M, ZCZ＇）-ZCZ sequence family from an original （L,M,ZCZ）-ZCZ sequence family, where ZCZ＇ = ZCZ if ZCZ is even and ZCZ＇ =ZCZ - 1 if ZCZ is odd. This method can also recursively act on a ZCZ sequence family to construct a series of ZCZ sequence families with large sequence number and zero correlation zone length identical to or one less than that of original ZCZ sequences.     

Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors

The impact of internal irradiation with secondary Compton electrons, generated by gamma-photons, on the characteristics of III-N/GaN-based devices was explored. N-channel AlGaN/GaN high-electron-mobility transistors (HEMTs) were exposed to gamma-radiation from a ⁶⁰Co source for doses up to 600?Gy. Temperature-dependent electron beam-induced current (EBIC) was employed to measure minority carrier transport properties. For low doses below ～250?Gy, the minority carrier diffusion length in AlGaN/GaN HEMTs is shown to increase by about 40%. This increase is likely due to longer minority carrier lifetime induced by internal Compton electron irradiation. An associated decrease in activation energy, extracted from temperature-dependent EBIC, was also found. The obtained increase in transconductance and decrease in gate leakage current indicate an improvement in performance of the devices after low doses of irradiation. For high doses of gamma-irradiation, above ～300?Gy, the performance of HEMTs showed a deterioration. The deterioration results from the onset of increased carrier scattering due to additional radiation-induced defects, as is translated in a decrease of minority carrier diffusion length.     

非腔长匹配相干叠加脉冲锁模激光器的理论研究

提出了一个新的非腔长匹配相干叠加脉冲锁模激光器的物理模型,建立了它的数学方程,并进行了模拟计算.计算结果给出了各个参数对相干叠加脉冲锁模激光器运转的影响,以及脉冲宽度压缩速度和各参数之间的关系,获得了实现非腔长匹配相干叠加脉冲锁模激光器运转的最佳条件.