Thermodynamic molecular switch in sequence‐specific hydrophobic interactions

This communication will demonstrate the existence of a thermodynamic molecular switch in the pairwise, sequence‐specific hydrophobic interaction of Ile–Ile, Leu–Ile, Val–Leu, or Ala–Leu over the temperature range of 273–333 K reported by Nemethy and Scheraga in 1962. Based on Chun's development of the Planck–Benzinger methodology, the change in inherent chemical bond energy at 0 K, ΔH°(T₀), is 3.0 kcal mol^?1 for Ile–Ile, 2.4 for Leu–Ile, 1.8 for Val–Leu, and 1.2 kcal mol^?1 for Ala–Leu. The value of ΔH°(T₀) decreases as the length of the hydrophobic side chain decreases. It is clear that the strength and stability of the hydrophobic interaction is determined by the packing density of the side chains, with Ala–Leu being the most stable. At 〈T_m〉, the thermal agitation energy, $\int^{T}_{0}\Delta Cp^{\circ}(T)\,dT$, is about five times greater than ΔH°(T₀) in each case. Additionally, the thermal agitation energy for the same series, evaluated at 〈T_m〉, decreases in the same order, that is, as the length of the side chain decreases. This pairwise, sequence‐specific hydrophobic interaction is highly similar in its thermodynamic behavior to that of other biological systems, except that the negative Gibbs free energy change minimum at 〈T_s〉 occurs at a considerably higher temperature, 355 K compared to about 300 K. The melting temperature, 〈T_m〉, is also high, 470 K compared to 343 K in a biological system. The implication is that the negative Gibbs free energy minimum at a well‐defined 〈T_s〉 has it origin in the hydrophobic interactions, which are highly dependent on details of molecular structure. In addition to the four specific dipeptide interactions described, we have shown in our unpublished work the existence of a thermodynamic molecular switch in the interactions of 32 dipeptides wherein a change of sign in ΔCp°(T)_reaction leads to a true negative minimum in the Gibbs free energy of reaction, and hence, a maximum in the related K_eq. Indeed, all interacting biological systems that we have thus far examined using the Planck–Benzinger approach point to the universality of thermodynamic molecular switches. © 2001 John Wiley & Sons, Inc. Int J Quantum Chem, 2001     

Plasmon-Assisted Self-Encrypted All-Optical Memory

All-optical responsive nanomaterials, which can rapidly switch between two stable states, have been regarded as the next-generation memories due to their potential to realize binary information storage and implement on-chip, integrated photonic neuromorphic systems. Rare earth oxides are preeminent candidates owing to their extraordinary luminescent stability and narrow optical transitions. However, due to the lack of simple and effective optical switches, it is difficult to realize all-optical data storage, encoding, and retrieval by pure rare earth-doped luminescent nanoparticles. Here, a rapid and high-contrast of 10⁴ luminescent switching of Y₂O₃:Eu³⁺ nanoparticle between the enhancement and quenching states is achieved by employing the strong light confinement and ultrafast thermal response of localized surface plasmon resonance. A self-encrypted all-optical memory is presented with optical information writing, encryption, reading, and re-writing, and a high-sensitivity synaptic response of emitters to frequency and light intensity flux, which can be harnessed to encrypt information flows and promote convenient and high-security information encryption. Such a convenient and secure plasmonic thermally assisted self-encrypting luminescent switch paves the way for constructing high-performance stimuli-responsive rare earth oxide crystals on demand and expanding their applications in various data encryption, anti-counterfeiting, and rewritable colouration devices.     

5G毫米波通信用低插损高隔离GaAs PHEMT单刀双掷开关

基于0.15μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,实现了一款用于5G毫米波通信的低插损高隔离单刀双掷(SPDT)开关芯片。为了降低插损,每个开关支路通过四分之一波长阻抗变换器连接到天线端,并通过优化传输线和器件总栅宽实现了良好的端口匹配;为了提高隔离度,采用了三并联多节枝的分布式架构形成高的输入阻抗状态,实现信号的全反射。芯片面积为2.1 mm×1.1 mm。在片测试结果显示,在24.25~29.5 GHz的5G毫米波频段内该SPDT开关实现了小于1.1 dB的极低插损和大于32 dB的高隔离度,1 dB压缩点输入功率大于26 dBm。     

卟啉超分子化合物在分子器件中的应用

分子电子器件已成为近年来的一个研究热点，卟啉类化合物因为光敏性好、性能稳定、易于修饰等优点成为分子器件研究的理想模型化合物。本文着重介绍了它在分子器件中的最新应用进展。     

DC-DC变换器中双开关网络的平均模型及其应用

根据电感上电流的断续情况,开关变换器可以工作在连续导电模式(CCM)和断续导电模式(DCM).开关网络的等效变比μ(t)可以被认为是CCM开关网络占空比d(t)的另一种表达式.因此,以CCM变换器为例的模型结果还可以用在其他工作模式,甚至可以使用于其他结构的变换器,需要处理的只是用μ(t)代替d(t).等效变比可以用作判断工作模式的标准.在这个仿真电路中,用平均开关模型子电路CCM-DCM代替了由功率场效应功率管和二极管组成的开关网络.     

1.55μm SiGe 2×3光开关

利用多模干涉效应和自由载流子等离子体色散效应设计和模拟了基于1.55μm波长的2×3 SiGe光开关.该光开关由两个单模输入端口、一个多模干涉区和三个单模输出端口构成.在多模干涉区,设有两个折射率调制区,可以利用来把从两个输入端口输入的光信号分别从三个输出端口输出.束传播法分析结果表明,该光开关的传输损耗小于1.43dB,串扰在-18～-32.8dB之间.     

电爆炸箔断路开关的理论和实验研究

 采用金属箔电爆炸过程的二维数值计算模型，对含电爆炸金属箔断路开关的电感储能脉冲功率调节系统进行了数值计算。以此为基础，研制出了一种低电感型的电爆炸箔断路开关，并以4μF/75kV脉冲电容器组作为初级能源，13Ω电阻作为负载进行实验研究。研究结果表明：在负载上可获得约250kV，脉宽大于400ns的脉冲电压。     

S-5N全固态重复频率脉冲发生器

 主要介绍S-5N的结构及测试实验结果。S-5N型全固态重复频率脉冲发生器是目前国际上同类源中峰值功率和平均功率均为最大的一台。随负载大小的变化，S-5N脉冲发生器的输出电压为400～600kV，输出电流2～3kA，输出脉冲半高宽40～50ns，单脉冲输出能量40～65J。 S-5N脉冲发生器在300Hz重复频率条件下可连续工作，500Hz重复频率条件下可连续工作3min，平均输出功率高达30kW。     

一种改进的2×2 SOI Mach-Zehnder热光开关

本文设计并制作了基于强限制多模干涉耦合器的2×2 SOI马赫-曾德热光开关.这种光开关采用了深刻蚀结构的多模干涉耦合器和输入/输出波导,较大地提高了干涉耦合器的性能并减少了连接耦合损耗.同时,在调制臂区域采用浅刻蚀结构,保持其单模调制状态.深刻蚀多模干涉耦合器具有优越的特性,在实验中测得不均衡度只有0.03 dB,插入损耗－0.6 dB.基于这种耦合器的新型热光开关,其插入损耗为－6.8 dB,其中包括光纤-波导耦合损耗－4.3 dB,开关时间为6.8 μs.     

杨氏双缝干涉实验的光谱变化

从理论和实验上研究了当部分相干光照射在双缝上时,杨氏双缝干涉实验干涉场中的光谱变化.指出干涉场中的归一化光谱在某些空间点处出现了蓝移,在另外一些空间点处出现了红移,而在这些空间点的中间,光谱分裂为等值的两条,出现了光谱开关现象.发现当观察点从轴上向轴外移动的过程中,在很多空间观察点处都出现了光谱开关现象.此外,研究结果还表明光谱相干度将对光谱的移动和光谱开关现象产生重要的影响.