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61.
采用电磁场有限元方法,数值模拟了孔径型扫描近场光学显微镜(aperture Scanning Near-field Optical Microscopy,a-SNOM)在照明模式下的工作过程.针对金偶极天线结构,改变天线长度和纳米间隙尺寸,计算了a-SNOM探针孔径的远场辐射速率随探针端面中心坐标变化的扫描曲线,实现了超越a-SNOM探针通光孔径尺寸的天线金属纳米间隙的超分辨测量,对于100nm通光孔径的探针,可分辨最小尺寸为10nm(0.016倍波长)的金属间隙.通过对比金属和介质偶极天线的a-SNOM探针远场辐射速率测量的计算结果,表明天线金属纳米间隙的超分辨测量的实现是由于金属间隙表面等离激元的激发. 相似文献
62.
Titanium dioxide thin films have been deposited by metalorganic chemical vapor deposition (MOCVD) over sodalime glass substrates at substrate temperatures ranging from 250 °C to 450 °C. The effect of deposition temperature on the structure and microstructure of the obtained films has been studied by x-rays diffraction (XRD) and scanning electron microscopy (SEM), respectively. Diffraction patterns show the existence of a pure anatase phase beside a texture change with the increase of deposition temperature. Micrographs show grain fragmentation with the increase in deposition temperature. UV–Vis. spectra have been recorded by spectrophotometery. The optical energy gap has been calculated for the deposited films from the spectrophotometrical data. Photocatalytic experiments have been carried out. The photocatalytic activity has been found to decrease with the increase in deposition temperature. 相似文献
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A. K. Prajapati 《Liquid crystals》2013,40(8):1017-1020
Two mesogenic homologous series, 2-[4-(4-n-alkoxybenzoyloxy)-2-methylphenylazo]-naphthalenes (I) and 2-[4-(4-n-alkoxybenzoyloxy)-3-methylphenylazo]naphthalenes (II) with a lateral methyl group have been synthesized. Both series are purely nematogenic. The mesomorphic properties of both series are compared with each other and also with the properties of other structurally related series to evaluate the effect of the lateral methyl group on mesomorphism. The chiral nematic (N*) mesophase was induced in the system by doping with a derivative of naturally occurring chiral menthol. 相似文献
70.
Tomohiro Sakata Shingo Ogawa Keiko Inoue Yumiko Shimizu Yusaku Tanahashi 《Surface and interface analysis : SIA》2022,54(6):661-666
To systematically evaluate the quality of SiNx films in multi-stacked structures, we investigated the effects of post-deposition annealing (PDA) on the film properties of SiNx within the SiO2/SiNx/SiO2/Si stacked structure by performing X-ray photoelectron spectroscopy (XPS), X-ray reflectivity (XRR), Fourier transform infrared (FT-IR) spectroscopy, and scanning transmission electron microscope–electron energy loss spectroscopy (STEM-EELS) analyses. The XPS results showed that PDA induces the oxidation of the SiNx layer. In particular, new finding is that Si-rich SiNx in the SiNx layer is preferentially oxidized by PDA even in multi-stacked structure. The XRR results showed that the SiNx layer becomes thinner, whereas the interface layer between the SiNx layer and Si becomes thicker. It is concluded by STEM-EELS and XPS that this interface layer is SiON layer. The density of N–H and Si–H bonding within the stacked structure strongly depends on the PDA temperature. Our study helps elucidate the properties of SiNx films in stacked structures from various perspectives. 相似文献