The Hall tensor emerges from the study of the Hall effect, an important magnetic effect observed in electric conductors and semiconductors. The Hall tensor is third-order and three-dimensional, whose first two indices are skew-symmetric. This paper investigates the isotropic polynomial invariants of the Hall tensor by connecting it with a second-order tensor via the third-order Levi-Civita tensor. A minimal isotropic integrity basis with 10 invariants for the Hall tensor is proposed. Furthermore, it is proved that this minimal integrity basis is also an irreducible isotropic function basis of the Hall tensor. 相似文献
Effects of ion-induced surface roughness on sputtering of amorphous carbon under ion bombardment are studied by means of binary-collision computer simulation in a wide range of incidence angles. Most simulations refer to 1–10?keV Ar ion bombardment, and sinusoidal ripple morphology is assumed. It is shown that surface roughness is a key factor to achieve quantitative agreement with experiment. The simulation results are compared with the analytical estimates of the yield from sine-shaped and ridged surfaces based on continuum models of ion sputtering. Some deviations between the results are discussed. 相似文献
The stability and reactivity of mono‐ and multi‐protonatred N‐substituted isatin derivatives were studied at PBE0/aug‐cc‐pvtz//PBE0/6‐31+G** level of theory in triflic acid (TFSA) solution. Calculations showed that the monocationic intermediates are the principal reactive species in the reaction of hydroxyalkylation of isatin derivatives in TFSA media. Electron‐withdrawing substituents on the nitrogen atom increase the reactivity of isatin‐containing electrophiles towards aromatic hydrocarbons, in accordance with their expected electronic influence. Steric factors also play an important role in the reactivity of isatin‐containing electrophiles, especially in the second reaction step, due to their more sterically hindered reactive center.
Diamond-like carbon (DLC) films were deposited on Si(1 0 0) substrates using plasma deposition technique. The deposited films were irradiated using 2 MeV N+ ions at fluences of 1×1014, 1×1015 and 5×1015 ions/cm2. Samples have been characterized by using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). Analysis of Raman spectra shows a gradual shift of both D and G band peaks towards higher frequencies along with an increase of the intensity ratio, I(D)/I(G), with increasing ion fluence in irradiation. These results are consistent with an increase of sp2 bonding. XPS results also show a monotonic increase of sp2/sp3 hybridization ratio with increasing ion fluence. Plan view TEM images show the formation of clusters in the irradiated DLC films. HRTEM micrographs from the samples irradiated at a fluence of 5×1015 ions/cm2 show the lattice image with an average interplanar spacing of 0.34 nm, revealing that the clusters are graphite clusters. The crystallographic planes in these clusters are somewhat distorted compared to the perfect graphite structure. 相似文献
Measurements of the internal-conversion electron emission due to the inelastic nuclear resonant excitation are reported. thin films of 20 and 1.3 nm thickness were deposited on Si(1 1 1), and the internal-conversion electrons were measured as a function of the photon energy. From the inelastic part of the spectra, the phonon density of states was obtained. Whereas the phonon density of states of 20-nm thick film resembles that of bulk -Fe, the 1.3-nm thick film revealed an obvious softening of the acoustic mode. 相似文献
The thickness-dependent electronic structures of Dy silicide films grown on a Si(1 1 1) surface have been investigated by angle-resolved photoelectron spectroscopy. Two (1×1) periodic bands, both of them cross the Fermi level, have been observed in the silicide films formed by Dy coverages of 1.0 monolayer and below, and more than five () periodic bands have been observed in thicker films. Taking the () periodic structure of Dy atoms in the submonolayer silicide film into account, the periodicity of the two metallic bands indicate that they mainly originate from the orbitals of Si atoms, which form a (1×1) structure. Of the () periodic bands observed in thick films, four of them are well explained by the folding of the (1×1) bands into a () periodicity. Regarding the other band, the three () periodic bands would originate from the electronic states related to the inner Si layers that form a () structure, and the one observed in the 3.0 ML film only might originate from the electron located at the interface between bulk Si and the Dy silicide film. 相似文献
A model to describe the critical current density behavior of high-Tc polycrystalline superconductors is proposed for all magnetic field values. The main features of the model are as follows: the transport critical current density is controlled by the weak-link network at grain boundaries. The size distribution of weak links is well represented by a Gamma-type distribution. Finally, the tunneling critical current between grains follows a Fraunhofer diffraction pattern or a modified pattern if the applied magnetic field is lower or higher than the first critical field Hc1. 相似文献