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21.
提出了一种基于微悬臂梁传感技术研究大分子折叠/构象转变的新方法.通过分子自组装的方法将热敏性的聚N-异丙基丙烯酰胺(PNIPAM)分子链修饰到微悬臂梁的单侧表面,用光杠杆技术检测温度在20—40℃之间变化时由于微悬臂梁上的PNIPAM分子在水中的构象转变所引起的微悬臂梁变形.实验结果显示:在升温过程中,微悬臂梁的表面应力发生了变化并且导致微悬臂梁产生了弯曲变形,这个过程对应着微悬臂梁上的PNIPAM分子从无规线团构象到塌缩小球构象的构象转变.在降温过程中,微悬臂梁发生了反方向的弯曲变形,这对应着PNIPA
关键词:
构象转变
聚N-异丙基丙烯酰胺分子链
表面应力
微悬臂梁 相似文献
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The stress tensor of a massless scalar field satisfying a mixed boundary condition in a (1 + 1)-dimensional Reissner- Nordstrom black hole background is calculated by using Wald's axiom. We find that Dirichlet stress tensor and Neumann stress tensor can be deduced by changing the coefficients of the stress tensor calculated under a mixed boundary condition. The stress tensors satisfying Dirichlet and Neumann boundary conditions are discussed. In addition, we also find that the stress tensor in conformal flat spacetime background differs from that in flat spacetime only by a constant. 相似文献
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For the methylsilsesquioxane film whose optical birefringence is almost zero, it was recently reported that its vertical thermal expansion coefficient (CTE) was approximately one order of magnitude larger than the lateral CTE. Though the birefringence is not an absolute predictor of anisotropic behavior, the discrepancy in both the CTEs was so remarkable that it was essential to investigate whether the anisotropy was intrinsic property or not. If the effect of Poisson's ratio is considered in the calculation of the vertical CTE and when elastic modulus measured by surface acoustic wave spectroscopy is used in the assessment of the lateral CTE, both the CTEs are coincident with each other. Therefore, it can be concluded that the discrepancy in the CTEs can be attributed to a higher in‐plane polymer chain orientation but it can also arise from the misleadingly assumed modulus and Poisson's ratio. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 3109–3120, 2006 相似文献
26.
Quantitative x-ray diffraction topography techniques have been used to measure the residual strain magnitude and uniformity
of deposition for Mo and W sputtered films on Si(100) substrates. High sensitivity rocking curve measurements were able to
determine differential strains for films as thin as 2.5 nm; while Bragg angle contour mapping had similar sensitivity and
was also able to assess coating uniformity and stress distribution over areas covering a whole wafer. Measurements of strain
versus film thickness over a range of 2.5 nm to 80 nm showed that a critical thickness exists for maximum residual strain.
Growth beyond this range produces stress relaxation. This non-destructive type of analysis could be employed on a wide range
of film-substrate combinations. 相似文献
27.
It is thought that the extensive industrial use of arsenic, gallium and indium, which have applications as the materials for III–V semiconductors, will increase human exposure to these compounds in the near future. We have undertaken the development of new biological indicators for assessing exposure to these elements. Element-specific alterations in protein synthesis patterns were expected to occur following exposure to arsenic compounds. We examined alterations in protein synthesis in primary cultures of rat kidney proximal tubule epithelial cells by sodium arsenite, gallium chloride and indium chloride, utilizing two-dimensional gel electrophoresis. After incubation with the chemicals for 20 h, newly synthesized proteins were labeled with [35S]methionine. A protein with a molecular weight (Mr) of 30 000 was markedly induced on exposure to 10 μM arsenite or 300 μM gallium chloride, and synthesis of proteins with Mr values of 85 000, 71 000, 65 000, 51 000, 38 000 and 28 000 were also increased by exposure to arsenite and gallium chloride. No significant changes were observed upon exposure to indium. Some of these increased proteins could be heat-shock proteins. 相似文献
28.
The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation. 相似文献
29.
全20CrMnTi表面激光重熔的组织与性能研究 总被引:2,自引:0,他引:2
本文对激光重熔20CrMnTi材料表明改性层显微组织分布特征、表面硬度分布规律以及残余应力状态作了研究,结果表明,表面改性层由熔融层、相变硬化层及过渡层组成,且材料表面显微硬度得到大幅度提高,表面硬度达到HV841,约提高4倍。硬化层深度约1mm。残余应力测试得出最大残余应力出现在熔凝带中心,表现为压应力。随着离中心距离的增大,残余应力逐步降低,到熔化带边缘,表现为低幅值压应力;而熔池的外边缘应力在热影响区则转变为拉应力状态。 相似文献
30.