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81.
P.A. Ramachandran 《Numerical Methods for Partial Differential Equations》2006,22(4):831-846
Time‐dependent differential equations can be solved using the concept of method of lines (MOL) together with the boundary element (BE) representation for the spatial linear part of the equation. The BE method alleviates the need for spatial discretization and casts the problem in an integral format. Hence errors associated with the numerical approximation of the spatial derivatives are totally eliminated. An element level local cubic approximation is used for the variable at each time step to facilitate the time marching and the nonlinear terms are represented in a semi‐implicit manner by a local linearization at each time step. The accuracy of the method has been illustrated on a number of test problems of engineering significance. © 2005 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 2006 相似文献
82.
和所有设备一样,计算机设备也是在一定环境中工作的,各种环境因素无时不对设备产生影响。要使计算机设备在各种环境中保持良好的性能,必须了解各种环境对计算机设备影响的机理和过程,分析在环境因素中那些因素是影响计算机设备的主要因素及其力度、频率、周期等,以便采取措施保护计算机设备正常工作。简要介绍除温度外,各种环境因素对计算机设备的影响。 相似文献
83.
Cheul-Ro Lee 《Journal of Electronic Materials》2002,31(4):327-331
We have investigated the growth characteristics of n-Al0.15Ga0.85N:Si/GaN and the electronic properties of Au/n-Al0.15Ga0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al0.15Ga0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure
of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al0.15Ga0.85N epilayer, which was grown without any intentional flow of SiH4. However, many cracks are observed in the n-Al0.15Ga0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al0.15Ga0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation
exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al0.15Ga0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling
components and thermionic emission influence the current transport at the Au/n-Al0.15Ga0.85N:Si barrier when Si incorporation becomes higher. 相似文献
84.
85.
We present a new approach to study the convergence of Newton's method in Banach spaces, which relax the conditions appearing in the usual studies. The approach is based on the bound required for the second derivative of the operator involved. An application to a nonlinear integral equation is presented. 相似文献
86.
A simple scheme is developed for treatment of vertical bed topography in shallow water flows. The effect of the vertical step on flows is modelled with the shallow water equations including local energy loss terms. The bed elevation is denoted with zb‐ for the left and zb+ for the right values at each grid point, hence exactly representing a discontinuity in the bed topography. The surface gradient method (SGM) is generalized to reconstruct water depths at cell interfaces involving a vertical step so that the fluxes at the cell interfaces can accurately be calculated with a Riemann solver. The scheme is verified by predicting a surge crossing a step, a tidal flow over a step and dam‐break flows on wet/dry beds. The results have shown good agreements compared with analytical solutions and available experimental data. The scheme is efficient, robust, and may be used for practical flow calculations. Copyright © 2002 John Wiley & Sons, Ltd. 相似文献
87.
88.
89.
We obtain a solution of the DGLAP equation for the gluon at low x first by expanding the gluon in a Taylor series and then using the method of characteristics. We test its validity by comparing
it with that of Glück, Reya and Vogt. The convergence criteria of the approximation used are also discussed. We also calculate
εF
2(x,Q)2/ε In Q
2 using its approximate relations with the gluon distribution at low x. The predictions are then compared with the HERA data. 相似文献
90.