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11.
一种零电压转换有源功率因数校正电路的研究 总被引:1,自引:0,他引:1
提出了一种基于UC3854的零电压转换有源功率因数校正(ZVT-APFC)的控制电路实现方案,介绍了ZVT电路工作原理,着重分析了由分立元件构成的辅助开关管的驱动电路,通过实验证实了驱动电路的稳定性和可靠性,并通过效率比较验证了ZVT-APFC电路的优良性能。与采用UC3855的电路相比,该电路方案具有简单、可靠、成本低等优点。 相似文献
12.
Sensitivity analysis is a mathematical tool, first developed for optimization methods, which aim is to characterize a system response through the variations of its output parameters following modifications imposed on the input parameters of the system. Such an analysis may quickly become laborious when the thermal model under consideration is complex or the number of input parameters is high. In this paper, we develop a mathematical model to analyse the heat exchanges in four different types of solar air collectors. When building this thermal model we show that for each collector, at quasi-steady state, the energy balance equations of the components of the collector cascade into a single first-order non-linear differential equation that is able to predict the thermal behaviour of the collector. Our heat transfer model clearly demonstrates the existence of an important dimensionless parameter, referred to as the thermal performance factor of the collector, that compares the useful thermal energy which can be extracted from the heater to the overall thermal losses of that collector for a given set of input parameters. A sensitivity analysis of our thermal model has been performed for the most significant input parameters such as the incident solar irradiation, the inlet fluid temperature, the air mass flow rate, the depth of the fluid channel, the number and nature of the transparent covers in order to measure the impact of each of these parameters on our model. An important result which can be drawn from this study is that the heat transfer model developed is robust enough to be used for thermal design studies of most known flat plate solar air heaters, but also of flat plate solar water collectors and linear solar concentrators. 相似文献
13.
Ting Gang Zhu Uttiya Chowdhury Michael M. Wong Jonathan C. Denyszyn Russell D. Dupuis 《Journal of Electronic Materials》2002,31(5):406-410
In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky
rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers
grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5
V at 100 A/cm2 are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage
in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm2, and a forward-voltage drop of 3.5 V at a current density of 100 A/cm2. It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC
substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge
terminations in mesageometry GaN Schottky rectifiers has also been studied. 相似文献
14.
本文报导了最近研制成功的用于提高国产氩离子激光器相干长度的相干扩展器。利用这种基于F-P理论的相干扩展器可以使国产氩离子激光器的相干长度由不足5cm一下提高到m的量级,功率损耗在25%~40%之间,有着很好的应用前景。 相似文献
15.
水溶性防氧化剂在SMT用印制板上的应用 总被引:1,自引:0,他引:1
水溶性的防氧化剂是一种有机可焊性保护剂。其方法是在印制板完全阻焊、字符层的印刷,并经电检之后,通过表面浸渍在裸铜的贴片位或通孔内形成一种耐热性的有机可焊性膜层。这种有机、可焊、耐热的膜层,膜厚可达0.3-0.5mm,其分解的温度可达约300℃,传统的印制板的热风整平法亦无法满足QFP愈来愈密集的需求,同时也无法满足SMD表面平整度的要求,更无法适应PCB薄型化生产。烷基苯并咪唑的OSP法能弥补这项缺陷,因而在PCB业乃至SMT产业中得到了广泛的应用。 相似文献
16.
A new method for controlling the quantum coherence of atom laser by applying input light with strong strength is presented
within the framework of quantum dynamical theory. Unlike the case of rotating wave approximation(RWA), we show that the non-classical
properties, such as sub-Poisson distribution and quadrature squeezed effect, can appear in the output atom laser beam with
time. By choosing suitable initial RF phase, a steady and brighter output of squeezed coherent atom laser is also available. 相似文献
17.
和所有设备一样,计算机设备也是在一定环境中工作的,各种环境因素无时不对设备产生影响。要使计算机设备在各种环境中保持良好的性能,必须了解各种环境对计算机设备影响的机理和过程,分析在环境因素中那些因素是影响计算机设备的主要因素及其力度、频率、周期等,以便采取措施保护计算机设备正常工作。简要介绍除温度外,各种环境因素对计算机设备的影响。 相似文献
18.
Cheul-Ro Lee 《Journal of Electronic Materials》2002,31(4):327-331
We have investigated the growth characteristics of n-Al0.15Ga0.85N:Si/GaN and the electronic properties of Au/n-Al0.15Ga0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al0.15Ga0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure
of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al0.15Ga0.85N epilayer, which was grown without any intentional flow of SiH4. However, many cracks are observed in the n-Al0.15Ga0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al0.15Ga0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation
exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al0.15Ga0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling
components and thermionic emission influence the current transport at the Au/n-Al0.15Ga0.85N:Si barrier when Si incorporation becomes higher. 相似文献
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