溶胶-凝胶旋涂法制备In掺杂ZnO薄膜结构和光学性能的研究

采用溶胶-凝胶(sol-gel)旋涂法在常规玻璃衬底 上生长了In掺杂浓度分别为1at%、2at%、3at%、4at%、5at%的ZnO薄膜。借助X射线衍射仪(X RD)、扫描电子显微镜(SEM)、紫外- 可见分光光度计(UV-Vis)对样品的晶粒生长、结构以及光学性能进行表征。结果如下:所 制 备的薄膜均沿(002)方向择优生长,且随着In³⁺掺杂浓度增加 ,衍射峰的峰型及半高宽均呈 先降低后升高的趋势;In³⁺掺入后,ZnO薄膜晶粒由原来的六边形状发展成类似蠕虫 状,同 时粒径变小且大小不一;与本征样品相比,掺杂后的ZnO光透过率提高了10%,且吸收边向短 波长方向偏移,同时随着In³⁺的掺入,薄膜的光学带隙值从3.49 eV增加到3.80 eV。当In³⁺掺 杂浓度为4at%时,薄膜(002)峰的峰形最为尖锐、峰值最大,晶粒较为均匀、 晶格间距更小,光透过率最高,光学带隙值相对较大为3.77 eV。     

双波段红外光纤增透膜的研究

介绍了双波段 ( 3～ 5μm和 8～ 1 2 μm)红外光纤端面镀增透膜的重要性及其研制过程。     

Exact probabilistic testability measures for multi-output circuits

The computation of probabilistic testability measures has become increasingly important and some methods have been proposed, although the exact solution of the problem is NP-hard. An exact analytical method for singleoutput combinational circuits is extended to deal with multi-output circuits. Such circuits are reduced to singleoutput ones by introducing a dummy gate, the X-gate, and applying to the resulting graph the analysis based on supergates.     

红外激光划痕涂层的应力应变理论分析

为研究涂层的热应力和应变与涂层结合强度之间的关系,对红外激光划痕后的涂层的热应力应变进行了理论分析,建立了涂层的热应力理论模型和应变公式.红外激光划痕涂层的试验结果表明,激光划痕后涂层在沿其厚度方向上的应变量有明显的突变过程,突变点的位置即是涂层从基体脱离下来的临界位置;激光划痕时涂层的剥离应力随涂层的温度增大而增大,并会呈现出两个阶段过程变化,进而说明了两个阶段之间的转折点反映了涂层结合强度的大小.     

镁合金表面激光熔覆纳米三氧化二铝

镁合金由于密度小、比强度高、良好的导电和导热性而成为工业结构工程和运输工具中非常有应用前景的工程材料.但由于镁合金的耐磨性差,成为阻碍镁合金应用与汽车工业或其他工程部件中作为转动部件的一大障碍.为提高镁合金的表面耐磨性.各种表面处理技术应运而生.其中激光表面改性处理技术比较引人瞩目.为提高镁合金的表面耐磨性.采用激光熔覆纳米Al2O3颗粒的办法对ZM5镁合金进行了表面改性处理.激光改性是采用500 W脉冲Nd:YAG熔化预置在ZM5表面的纳米三氧化二铝进行处理的.激光熔覆后,对改性层的显微结构进行了分析.同时对显微硬度与激光加工参数之间的关系以及耐磨性均进行了测试.改性层的显微硬度可以高达350 HV,而基材的显微硬度只有100 HV.激光改性处理层的耐磨性与基材相比也得到了显著的提高.     

电镀废液回收铜粉的化学镀银工艺及其电磁屏蔽性能

采用高频超声脉冲电解法从电镀铜废液中回收制备枝晶状的铜粉,并在铜粉表面进行化学镀银以制备电磁屏蔽用银包铜粉,采用SEM、EDS、XRD、TEM等对其进行形貌和组分分析,研究了银包铜粉复合涂层的导电性能和电磁屏蔽性能。结果表明,经过表面化学镀银可以有效地避免铜粉的氧化;涂层的电磁屏蔽性能与银包铜粉的添加量紧密相关,当涂层中银包铜粉质量分数为60%时,其电磁屏蔽效率高达52 dB。     

Influence of operation conditions on true-static DC characteristics and on electro-thermal transient states in silicon carbide Merged PiN Schottky diodes.

In this paper, measured and calculated non-isothermal DC characteristics of silicon carbide MPS devices are investigated, with special attention paid on critical parameters, such as maximum current and junction temperature at which a thermal runaway may occur. Electro-thermal transient states in single MPS devices (forward surge current tests) and in the simple Greatz rectifier are simulated and compared to measurements. Various electro-thermal models of SiC SBDs, with a simplified, effective procedure for calculations of junction temperature are proposed.     

用于NoC映射的EDA工具设计

片上网络（NoC）作为解决片上系统（SoC）复杂通信问题的新的范例,受到了工业界和学术界的广泛重视。为了保证实时任务在片上网络上的高效运行,从任务到网络拓扑的映射问题成为NoC研究中的关键问题之一。为了得到各种条件下的不同映射结果和性能曲线,本文设计了一种通用的NoC映射EDA工具。该工具基于Matlab的GUI设计方法,具有界面友好、可重配置性、运行速度快、自动导出并存储仿真结果等特点。     

Effect of off-orientation of seed crystal on silicon carbide (SiC) single-crystal growth on the (11 $$\bar 2$$ 0) surface0) surface

The effect of off-orientation growth has been investigated in terms of stacking fault formation during physical vapor transport (PVT) growth of silicon carbide (SiC) single crystals on the (11 0) seed crystal surface. Occurrence of stacking fault formation is largely dependent on the direction of off-orientation, and basal plane stacking fault density is significantly reduced by growing the crystals on a (11 0) seed crystal off-oriented toward 〈0001〉. The density of the basal plane stacking faults rapidly decreases from 100–150 cm⁻¹ to ∼10 cm⁻¹ as the degree of off-orientation is increased from 0 to 10 deg. The results are interpreted in the framework of microscopic facet formation during PVT growth, and the introduction of off-orientation of seed crystal is assumed to prevent (01 0) and (10 0) microfacet formation on the (11 0) growing surface through modification of the surface growth kinetics and to suppress the stacking fault formation. An erratum to this article is available at .     

激光熔覆WCp/Ni-Cr-B-Si-C自熔合金复合涂层的显微结构及干滑动磨损

运用激光熔覆技术在４５＃钢表面制备了ＷＣｐ增强Ｎｉ－Ｃｒ－Ｂ－Ｓｉ－Ｃ复合涂层。含量为３０ｖｏｌ－％ＷＣ典型涂层的ＸＲＤ,ＳＥＭ和ＴＥＭ分析表明,ＷＣｐ在熔覆的熔化阶段发生部分溶解和分解。激光熔体凝固时形成的微观组织由Ｎｉ＋Ｎｉ３Ｂ共晶基体上分布的杆（或薄片）状α－Ｗ２Ｃ,块状β－Ｗ２Ｃ和四方形η１碳化物Ｍ６Ｃ相组成。这类碳化物主要含Ｗ,并含大量Ｃｒ。销－环式干滑动磨损试验表明,当ＷＣｐ含量约为３０ｖｏｌ－％时,磨损抗力最大