砷化镓毫米波器件

叙述了GaAs MESFET、GaAs HEMT和GaAs耿氏器件等新一代GaAs毫米波器件的发展现状。     

Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication

Inductively coupled plasma (ICP) using hydrogen-based gas chemistry has been developed to meet requirements for deep HgCdTe mesa etching and shallow CdTe passivation etching in large format HgCdTe infrared focal plane array (FPA) fabrication. Large format 2048×2048, 20-μm unit-cell short wavelength infrared (SWIR) and 2560×512, 25-μm unit-cell midwavelength infrared (MWIR) double-layer heterojunction (DLHJ) p-on-n HgCdTe FPAs fabricated using ICP processing exhibit >99% pixel operability. The HgCdTe FPAs are grown by molecular beam epitaxy (MBE) on Si substrates with suitable buffer layers. Midwavelength infrared detectors fabricated from 4-in. MBE-grown HgCdTe/Si substrates using ICP for mesa delineation and CdTe passivation etching demonstrate measured spectral characteristics, RoA product, and quantum efficiency comparable to detectors fabricated using wet chemical processes. Mechanical samples prepared to examine physical characteristics of ICP reveal plasma with high energy and low ion angle distribution, which is necessary for fine definition, high-aspect ratio mesa etching with accurate replication of photolithographic mask dimensions.     

结构参量对脉冲高斯光束布拉格衍射特性的影响

利用二维耦合波理论,研究了体光栅对时间和空间都为高斯型分布的脉冲激光光束的衍射性质,得到了衍射和透射光振幅的解析表达式.讨论了体光栅的结构参量对衍射光束的空间和频谱强度分布以及衍射效率的影响.结果表明,体光栅的波长选择带宽和衍射光束带宽随着结构参量的增大而增大,衍射效率随着入射脉冲时间宽度的增大而增大,并趋于定值,结构参量值越小,达到饱和的速度越慢,饱和值越大.     

半导体器件内离子有效LET值测量方法研究

提出了一种基于电荷收集测试技术的离子有效LET值测量方法.首先对半导体器件内收集电荷量与入射离子有效LET值之间的关系进行了分析,根据二者之间的关系提出通过测量电荷收集量从而测量离子有效LET值的方法;然后建立了半导体器件电荷收集测试系统,利用PN结和SRAM对测量方法进行了验证;最后成功利用该方法解释了以往单粒子效应实验中出现的数据异常.     

基于ISP1161的USB摄像头嵌入式Linux设备驱动

介绍一种在嵌入式Linux环境下实现USB摄像头驱动的方法,它采用具有USB Host协议的接口芯片ISP1161,通过分析Linux设备驱动原理以及ISP1161和USB摄像头芯片组工作机制,实现了USB摄像头的嵌入式Linux设备驱动,并在基于IntelXscale PXA255的Sitsang平台上实现了基于USB等时传输模式的图像数据采集.     

Tailoring Electron‐Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces

The interfacial electronic structure between oxide thin films and organic semiconductors remains a key parameter for optimum functionality and performance of next‐generation organic/hybrid electronics. By tailoring defect concentrations in transparent conductive ZnO films, we demonstrate the importance of controlling the electron transfer barrier at the interface with organic acceptor molecules such as C₆₀. A combination of electron spectroscopy, density functional theory computations, and device characterization is used to determine band alignment and electron injection barriers. Extensive experimental and first principles calculations reveal the controllable formation of hybridized interface states and charge transfer between shallow donor defects in the oxide layer and the molecular adsorbate. Importantly, it is shown that removal of shallow donor intragap states causes a larger barrier for electron injection. Thus, hybrid interface states constitute an important gateway for nearly barrier‐free charge carrier injection. These findings open new avenues to understand and tailor interfaces between organic semiconductors and transparent oxides, of critical importance for novel optoelectronic devices and applications in energy‐conversion and sensor technologies.     

Selective Pd Deposition on Au Nanobipyramids and Pd Site‐Dependent Plasmonic Photocatalytic Activity

The synthesis of anisotropic metal nanostructures is strongly desired for exploring plasmon‐enabled applications. Herein, the preparation of anisotropic Au/SiO₂ and Au/SiO₂/Pd nanostructures is realized through selective silica coating on Au nanobipyramids. For silica coating at the ends of Au nanobipyramids, the amount of coated silica and the overall shape of the coated nanostructures exhibit a bell‐shaped dependence on the cationic surfactant concentration. For both end and side silica coating on Au nanobipyramids, the size of the silica component can be varied by changing the silica precursor amount. Silica can also be selectively deposited on the corners or facets of Au nanocubes, suggesting the generality of this method. The blockage of the predeposited silica component on Au nanobipyramids enables further selective Pd deposition. Suzuki coupling reactions carried out with the different bimetallic nanostructures functioning as plasmonic photocatalysts indicate that the plasmonic photocatalytic activity is dependent on the site of Pd nanoparticles on Au nanobipyramids. Taken together, these results suggest that plasmonic hot spots play an important role in hot‐electron‐driven plasmonic photocatalysis. This study opens up a promising route to the construction of anisotropic bimetallic nanostructures as well as to the design of bimetallic plasmonic‐catalytic nanostructures as efficient plasmonic photocatalysts.     

S波段多注宽带速调管的研制

本文介绍了S波段200kW多注宽带速调管的研究工作。给出了多注速调管及其电子光学和聚焦系统、宽带输出电路的设计和计算结果。并给出了我国第一批实验型多注宽带速调管的性能:工作电压19kV时,控制极负偏压为7kV,脉冲电流32.25A,导流系数12.3P,电子注直流通过率91.8％。最大输出功率252kW,平均功率3.5kW,效率41％,增益49dB,带宽9.1％,带内功率波动1.7dB。     

电动汽车铅酸蓄电池智能充电及其策略

为提高电动汽车铅酸蓄电池寿命和续航能力,实现蓄电池高效、快速充电,设计了一种智能充电系统。硬件采用DC/DC正激变换电路实现功率的转换,同时以单片机为智能控制核心,并利用DS18B20采集电池温度。软件上根据蓄电池快速充电原理,提出一种分阶段定电流和正负脉冲相结合的新型充电控制策略。利用模块化设计方法,完成各功能模块设计,以及利用数字 PI算法实现分阶段电流恒定。实验证明,采用新型控制策略的智能充电系统对蓄电池进行充电,减少了充电时间,提高了充电效率。     

Status and application of HgCdTe device modeling

In this article, device modeling refers to numerical simulation of semiconductor device physics to predict electrical behavior. The silicon integrated circuit industry provides the example for the use of technology computer-aided design to simulate wafer fabrication processes, and the electrical performance of devices and circuits. This paper first reviews semiconductor device modeling in general, then as applied in work supporting the development and analysis of HgCdTe infrared detectors. Example applications of one- and two-dimensional device modeling are simulation of a bias-selectable, integrated two-color detector, and two-dimensional effects on the spectral response of a HgCdTe detector with composition grading.