Increase in the Intracellular Bulk Water Content in the Early Phase of Cell Death of Keratinocytes,Corneoptosis, as Revealed by 65 GHz Near-Field CMOS Dielectric Sensor

While bulk water and hydration water coexist in cells to support the expression of biological macromolecules, how the dynamics of water molecules, which have long been only a minor role in molecular biology research, relate to changes in cellular states such as cell death has hardly been explored so far due to the lack of evaluation techniques. In this study, we developed a high-precision measurement system that can discriminate bulk water content changes of ±0.02% (0.2 mg/cm³) with single-cell-level spatial resolution based on a near-field CMOS dielectric sensor operating at 65 GHz. We applied this system to evaluate the temporal changes in the bulk water content during the cell death process of keratinocytes, called corneoptosis, using isolated SG1 (first layer of stratum granulosum) cells in vitro. A significant irreversible increase in the bulk water content was observed approximately 1 h before membrane disruption during corneoptosis, which starts with cytoplasmic high Ca²⁺ signal. These findings suggest that the calcium flux may have a role in triggering the increase in the bulk water content in SG1 cells. Thus, our near-field CMOS dielectric sensor provides a valuable tool to dissect the involvement of water molecules in the various events that occur in the cell.     

Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells

Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.     

金刚石对顶砧原位电导率测量系统

 在金刚石对顶砧中进行原位高温高压电阻测量时,由于受到绝热层的限制,从而达不到理想的温度条件。采用普通的粉末绝热材料,会给电极的引入造成很大困难,而且不规则的电阻丝使电阻测量很难精确量化。利用溅射镀膜方法,在对顶砧的砧面上镀氧化铝膜作绝热层,溅射的金属钼膜作电极材料,成功地完成了高温高压条件下原位电阻的测量。利用此装置,测量了铁镁硅酸盐(Mg_0.875,Fe_0.125)₂SiO₄在高温高压环境下（31~35 GPa,1 500~3 400 K）的电导率,得到了样品的导电粒子激活能,发现其激活能随着压强的升高而增大,与低压低温（小于15 GPa,低于1 200 K）条件相比,其激活体积和激活能都明显减小。     

上海光源XAFS线站时间分辨X射线激发发光谱实验系统

介绍了上海光源XAFS线站（BL14W1）的时间分辨X射线激发发光光谱（TRXEOL）实验系统。该系统基于时间相关单光子计数法的原理设计,以同步辐射光源的脉冲特性及其良好的时间结构为基础,通过集成定时系统、光谱仪系统和核电子学系统,在国内同步辐射装置上首次实现了TRXEOL实验方法。定时系统提供同步触发电脉冲,用来标志X射线脉冲打到样品上的时刻,同步精度约6 ps,延时分辨率5 ps;光谱仪经光电探测器把样品发光信号转换成电脉冲,核电子学系统对定时电脉冲和发光电脉冲之间的时间差进行统计分析,可得到样品的发光衰减曲线,再结合光谱仪的扫描控制和数据获取系统,可得到样品的TRXEOL光谱。利用该实验系统可以测量发光样品的普通XEOL光谱、发光衰减曲线和TRXEOL光谱。用ZnO纳米线样品,进行了实验验证。实验得到的普通XEOL光谱能够明显区分该样品在390和500 nm处的两个发光中心;得到的发光衰减曲线能够区分小于2 ns的快发光过程和200 ns的慢发光过程;分别在0～1, 2～200和0～200 ns时间窗口内测量得到了ZnO纳米线样品的TRXEOL光谱,在这3个发光时间带内得到了对应的发光信息;ZnO纳米线样品发光衰减曲线快发光峰的半高宽约为0.5 ns,证明了TRXEOL系统的最小时间分辨率小于1 ns。该系统在国内同步辐射装置上提供了用于研究发光材料的TRXEOL实验方法,该方法与发光模式的XAFS方法相结合,可更深入的研究发光材料的发光行为。整个实验平台操作简便、工作稳定可靠,不仅为发光材料的研究提供了研究手段,还为进一步开展发光模式XAFS和TRXEOL成像等实验方法提供技术前提。     

Wafer thickness optimization for silicon solar cells of heterogeneous material quality

In this Letter, we introduce a method of calculating the optimal wafer thickness for silicon solar cells with multicrystalline bulk material. The optimal thickness depends on the relation of bulk recombination to surface recombination and the light trapping. For multicrystalline silicon bulk recombination strongly varies laterally and with injection level, which complicates the calculations. A thickness optimization using the “Efficiency Limiting Bulk Recombination Analysis” (ELBA) takes all these effects correctly into account. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

液晶盒厚度的反射光谱拟合法测量

介绍了一种测量液晶盒厚度的新型光学方法——反射光谱拟合法。理论上,液晶盒的反射光谱呈正弦曲线,且曲线取极值时对应入射光波长大小值取决于所用液晶盒的厚度。反之亦然,当得知液晶空盒的反射光谱时,可以根据曲线取极值时入射光波长的值来获得待测液晶盒的厚度。软件用来搜索与实验测试数据相互吻合的液晶盒厚度。该技术以白光作为液晶盒的前端光源,且白光入射角为0°。结果表明,该方法测量范围5 ～30μm,测量重复误差0 .1μm以下。实验中,光纤光谱仪用来测试反射光谱,并通过USB接口将其传输到计算机。该方法的优点是它可以在0 .1 s内测试液晶盒表面任意点处的厚度,有较强的使用价值。     

固体氧化物燃料电池发展及展望

在21世纪的今天,能源和环境对人类的压力越来越大.当人们把能源供应仍然寄托于煤的综合利用为主时,可以直接使用多种碳基燃料的高温固体氧化物燃料电池(SOFC)发电技术将是新型高效洁净能源的有效途径之一.在发展大型电站技术的同时,固体氧化物燃料电池作为分布式电站和备用电源技术及示范工程蓬勃开展.世界范围内,各种相关鼓励SOFC快速发展的政策陆续出台.千瓦量级的SOFC发电系统将在军方首先试用,多国联合的SOFC商业化进程正在加速实施.     

统一交换技术的研究和实现

文章介绍了统一交换原理和实现统一交换的关键技术,包括信元交换技术和 SAR(切割与重组)技术,给出了统一交换设备实现功能框图,讲述了设计中需要关注的交换效率、时延、交换板冗余保护和交换容量计算等方面的问题。该文的成果已经在光传输设备上得到应用,并取得了良好的效果。该技术具有明显的优势,是构成下一代通信网络的关键技术之一。     

空间微小碎片对低轨道航天器太阳电池表面撞击损伤研究

低轨道空间微小碎片密度相对较高,对太阳电池等大面积暴露材料的累积撞击损伤效应是航天器设计中应考虑的主要问题之一.以典型的太阳同步轨道为例分析和计算了太阳电池表面所遭遇的微小碎片通量,进行了微小碎片的撞击损伤模拟实验,并建立了撞击损伤方程.根据碎片通量分布及撞击损伤方程计算了微小碎片的超高速撞击所产生的太阳电池表面的面积损伤率,通过光学透射率的实验测试并结合理论模型,对碎片导致的太阳电池光学透射率衰减进行了计算和分析.结果表明,10a累积撞击导致的太阳电池表面的面积损伤率平均约为0.61%,严重时达到2.3 关键词： 微小碎片 超高速撞击 太阳电池 玻璃盖片     

胶体Cu2CdSnS4纳米晶的合成与其性质研究

用简易的溶液化学方法合成了胶体Cu2CdSnS4纳米晶.透射电子显微镜(TEM),扫描电子显微镜(SEM),能谱(EDS),X射线衍射(XRD),X射线光电子谱(XPS)和UV-vis-NIR吸收光谱测试表明Cu2CdSnS4胶体纳米晶具有均一的尺寸分布和良好的结晶性,并具有四面体结构.纳米晶中Cu/Cd/Sn/S的化学计量比约为2.07:0.75:1.26:3.92,Cu、Cd、Sn和S四种元素的化学态分别为+1、+2、+4和-2价,与Cu2CdSnS4分子式中的化学态一致.通过外推法估算Cu2CdSnS4纳米晶的禁带宽度为~1.3 eV.