Microscopic Interface Between Two Immiscible Electrolytes: A Parallelism to an Ultramicroelectrode

Abstract

Current-potential response of a small interface formed between two immiscible solutions of electrolytes is examined. The diameter of the contact area made in a thin glass wall separating two solvents is approximately 130 μm. Ion transport across the nitrobenzene-water interface is studied by addition of probe semi-hydrophobic ions such as tetramethylammonium, tetraethylammonium, picrate, choline and dodecylsulfate to either aqueous or nonaqueous phase. The voltammetric behavior observed with the microinterface generally resembles that of a solid microelectrode of a similar radius. The contribution of ohmic drop becomes less significant with decrease of the interface area. This phenomenon permits voltammetric and amperometric measurements without using a potentiostat, and the solvent resistance is of a lesser problem.     

An operator splitting strategy for fluid–structure interaction problems with thin elastic structures in an incompressible Newtonian flow

We present a computational framework based on the use of the Newton and level set methods to model fluid–structure interaction problems involving elastic membranes freely suspended in an incompressible Newtonian flow. The Mooney–Rivlin constitutive model is used to model the structure. We consider an extension to a more general case of the method described in Laadhari (2017) to model the elasticity of the membrane. We develop a predictor–corrector finite element method where an operator splitting scheme separates different physical phenomena. The method features an affordable computational burden with respect to the fully implicit methods. An exact Newton method is described to solve the problem, and the quadratic convergence is numerically achieved. Sample numerical examples are reported and illustrate the accuracy and robustness of the method.     

A sharp‐interface immersed boundary framework for simulations of high‐speed inviscid compressible flows

A new finite‐volume flow solver based on the hybrid Cartesian immersed boundary (IB) framework is developed for the solution of high‐speed inviscid compressible flows. The IB method adopts a sharp‐interface approach, wherein the boundary conditions are enforced on the body geometry itself. A key component of the present solver is a novel reconstruction approach, in conjunction with inverse distance weighting, to compute the solutions in the vicinity of the solid‐fluid interface. We show that proposed reconstruction leads to second‐order spatial accuracy while also ensuring that the discrete conservation errors diminish linearly with grid refinement. Investigations of supersonic and hypersonic inviscid flows over different geometries are carried out for an extensive validation of the proposed flow solver. Studies on cylinder lift‐off and shape optimisation in supersonic flows further demonstrate the efficacy of the flow solver for computations with moving and shape‐changing geometries. These studies conclusively highlight the capability of the proposed IB methodology as a promising alternative for robust and accurate computations of compressible fluid flows on nonconformal Cartesian meshes.     

基于Android系统的船舶行业移动办公的研究实现

基于现代网络技术的发展和移动终端的发展前景,为了更好地发展船舶行业,从而实现移动办公,本文采用了智能移动终端开发了一款查询软件,主要从用户的角度进行功能分析、权限设计、接口设计和测试。通过测试,可以看出该软件可以实现远程访问数据库,查询信息和收发信息。在一定程度上,这一功能的实现推进了移动办公的速度,同时加速了船舶行业的数字化进程,如果把该软件推广到其他行业,依然可以完成相似的功能,有更广阔的发展前景。     

Weak coupling of a Reynolds model and a Stokes model for hydrodynamic lubrication

The Reynolds model is a reduced Stokes model, valid for narrow lubrication regions. In order to be able to handle locally non‐narrow regions such as pits or grooves, often displaying rapid geometrical variations, there is a need to be able to transit to the more accurate Stokes model. A fundamental problem is how to couple the two models in a numerical simulation, preferably allowing for different meshes in the different domains. In this paper, we present a weak coupling method for Reynolds and Stokes models for lubrication computations, including the possibility of cavitation in the different regions. The paper concludes with a numerical example. Copyright © 2010 John Wiley & Sons, Ltd.     

A Study on SSVEP-Based BCI

Abstract-Brain-computer interface （BCI） can help the deformity person finish some basic activities. In this paper, we concern some critical aspects of SSVEP based BCI, including stimulator selection, method of SSVEP extracting in a short time, stimulating frequency selection, and signal electrode selection. The conclusion is that the stimulator type should be based on the complexity of the BCI system, the method based on wavelet analysis is more valid than the power spectrum method in extracting the SSVEP in a short period, and the selections of stimulating frequency and electrode are important in designing a BCI system. These contents are meaningful for implementing a real SSVEP-based BCI.     

Adsorption of azacrown ethers at solid–liquid interface. Contact angle and neutron reflectivity study

Adsorption of two alkylated N,N′-diaza-18-crown-6 ethers (decyl- and hexadecyl-derivatives, ACE-10 and ACE-16, respectively) on solid surfaces was studied by using contact angle and neutron reflectivity measurements. The solid substrates used were (a) Si covered with a native oxide layer (Si/SiO₂) and (b) Si with sputtered Pt layer (Si/Pt). The sensitivity of neutron reflectivity was drastically improved by applying the intermediate Pt layer of 150 Å, which gave rise to several Kiessig fringes in the experimentally accessible q-range. The position of the fringes is very sensitive to slight changes of the interfacial composition induced by adsorption of a thin monolayer, otherwise very difficult to detect. Unfortunately, in the studied case this sensitivity is immediately lost due to undesired adsorption of a protonated material on the Pt surface exposed to the lab air. A decrease of surface energy (increase of contact angle) of both Si/SiO₂ and Si/Pt upon exposure to toluene solutions of ACEs suggests that the latter are attached to the surface via the hydrophilic azacrown ether head with alkyl chains standing upright towards the liquid phase.     

接触面陷阱密度对a-InSnZnO薄膜晶体管器件电气性能的影响研究

We reported the influence of interface trap density（Nt） on the electrical properties of amorphous InSnZnO based thin-film transistors,which were fabricated at different direct-current（DC） magnetron sputtering powers.The device with the smallest N_t of 5.68×10¹¹ cm^-2 and low resistivity of 1.21×10^-3Ω·cm exhibited a turn-on voltage(V_ON) of-3.60 V,a sub-threshold swing（S.S） of 0.16 V/dec and an on-off ratio(I_ON/I_OFF) of⁸ x 108.With increasing N_t,the V_ON,S.S and I_ON/I_OFF were suppressed to-9.40 V,0.24 V/dec and 2.59×10⁸,respectively.The V_TH shift under negative gate bias stress has also been estimated to investigate the electrical stability of the devices.The result showed that the reduction in N_t contributes to an improvement in the electrical properties and stability.     

Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors

We have investigated the temperature dependent interfacial and electrical characteristics of p-GaAs metal-oxide-semiconductor capacitors during atomic layer deposition(ALD) and annealing of HfO₂ using the tetrakis(ethylmethyl) amino hafnium precursor. The leakage current decreases with the increase of the ALD temperature and the lowest current is obtained at 300℃ as a result of the Frenkel-Poole conduction induced leakage current being greatly weakened by the reduction of interfacial oxides at the higher temperature. Post deposition annealing(PDA) at 500℃ after ALD at 300℃ leads to the lowest leakage current compared with other annealing temperatures. A pronounced reduction in As oxides during PDA at 500℃ has been observed using X-ray photoelectron spectroscopy at the interface resulting in a proportional increase in Ga₂O₃. The increment of Ga₂O₃ after PDA depends on the amount of residual As oxides after ALD. Thus, the ALD temperature plays an important role in determining the high-k/GaAs interface condition. Meanwhile, an optimum PDA temperature is essential for obtaining good dielectric properties.