基于TS101的PCI接口高速数据采集系统的设计

给出了基于TS101和PCI的双通道数据采集处理系统的设计方案。首先介绍了ADI公司新型数字信号处理(DSP)微处理器TS101和FLYBY数据传输模式,阐述了系统结构和工作原理,最后对如何利用TS101的FLYBY接口提高数据采集、存取效率和数据系统的逻辑控制进行了详细的论述。     

串行及并行A/D转换器在高速数据采集中的采样差别性分析

串行和并行接口模式是A/D转换器诸多分类中的一种,但却是应用中器件选择的一个重要指标.在同样的转换分辨率及转换速度的前提下,不同的接口方式不但影响了电路结构,更重要的是将在高速数据采集的过程中对采样周期产生较大影响.本文通过12位串行ADC ADS7822和并行ADC ADS774与AT89C51的接口电路,给出二者采样时间的差异性.     

MAX3100在80C196串口扩展中的应用

介绍采用新型的UART器件MAX3100为Intel单片机80C196扩展串口，给出了硬件设计和软件编程，并对关键技术进行了说明。     

Self-bonding in an amorphous polymer below the glass transition: A T-peel test investigation

Films of amorphous polystyrene (PS) with a weight-average molecular weight (M_w) of 225 × 10³ g/mol were bonded in a T-peel test geometry, and the fracture energy (G) of a PS/PS interface was measured at the ambient temperature as a function of the healing time (t_h) and healing temperature (T_h). G was found to develop with (t_h)^1/2 at T_h = T_g-bulk − 33 °C (where T_g-bulk is the glass-transition temperature of the bulk sample), and log G was found to develop with 1/T_h at T_g-bulk − 43 °C ≤ T_h ≤ T_g-bulk − 23 °C. The smallest measured value of G = 1.4 J/m² was at least one order of magnitude larger than the work of adhesion required to reversibly separate the PS surfaces. These three observations indicated that the development of G at the PS/PS interface in the temperature range investigated (<T_g-bulk) was controlled by the diffusion of chain segments feasible above the glass-transition temperature of the interfacial layer, in agreement with our previous findings for fracture stress development at several polymer/polymer interfaces well below T_g-bulk. Close values of G = 8–9 J/m² were measured for the symmetric interfaces of polydisperse PS [M_w = 225 × 10³, weight-average molecular weight/number-average molecular weight (M_w/M_n) = 3] and monodisperse PS (M_w = 200 × 10³, M_w/M_n = 1.04) after healing at T_h = T_g-bulk − 33 °C for 24 h. This implies that the self-bonding of high-molecular-weight PS at such relatively low temperatures is not governed by polydispersity. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 1861–1867, 2004     

Effects of poly[styrene‐b‐(ethylene‐co‐butylene)‐b‐styrene] on the charge distributions of low‐density polyethylene/polystyrene blends

The effect of the triblock copolymer poly[styrene‐b‐(ethylene‐co‐butylene)‐b‐styrene] (SEBS) on the formation of the space charge of immiscible low‐density polyethylene (LDPE)/polystyrene (PS) blends was investigated. Blends of 70/30 (wt %) LDPE/PS were prepared through melt blending in an internal mixer at a blend temperature of 220 °C. The amount of charge that accumulated in the 70% LDPE/30% PS blends decreased when the SEBS content increased up to 10 wt %. For compatibilized and uncompatibilized blends, no significant change in the degree of crystallinity of LDPE in the blends was observed, and so the effect of crystallization on the space charge distribution could be excluded. Morphological observations showed that the addition of SEBS resulted in a domain size reduction of the dispersed PS phase and better interfacial adhesion between the LDPE and PS phases. The location of SEBS at a domain interface enabled charges to migrate from one phase to the other via the domain interface and, therefore, resulted in a significant decrease in the amount of space charge for the LDPE/PS blends with SEBS. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 2813–2820, 2004     

基于TMN的接入网网管系统模型

本文介绍了 TMN 网管系统的体系结构,进而讨论了接入网网管系统的体系结构和管理接口的有关问题。     

布里奇曼法生长碲镉汞晶体的固液界面形态研究

文中综述了布里奇曼法及加速坩埚旋转技术的布里奇曼法生工碲镉汞晶体过程中固液界面形态的研究结果，简单讨论了固液界面形态对组分分布的影响，并将两种技术所得的组分分布结果进行了比较，在分析影响固液界面形态因素的基础上，认为加速坩埚旋转技术是目前改善固液界面形态的有效方法。     

Electrochemical characterization of poly(vinylidenefluoride)-zinc triflate gel polymer electrolyte and its application in solid-state zinc batteries

Gel polymer electrolyte (GPE) films comprising of poly(vinylidenefluoride), propylene carbonate, ethylene carbonate and zinc trifluoromethane sulfonate are prepared and characterized. The composition of GPE is optimized to contain minimum liquid components with a maximum specific conductivity of 3.94×10⁻³ S cm⁻¹ at (25±1) °C. A detailed investigation on the properties such as ionic conductivity, transport number, electrochemical stability window, reversibility of Zn/Zn²⁺ couple and Zn/gel electrolyte interfacial stability have been carried out. The ionic conductivity follows a VTF behaviour with an activation energy of about 0.0014 eV. Cationic transport number varies from 0.51 at 25 °C to 0.18 at 70 °C. Several cells have been assembled with GPE as the electrolyte, zinc as the anode, γ-MnO₂ as the cathode and their charge–discharge behaviour followed. Capacity values of 105, 82, 64 and 37 mAh/g of MnO₂ have been achieved at 10, 50, 100 and 200 μA/cm² discharge current densities, respectively. The discharge capacity values are almost constant for about 55 cycles for all values of current densities. Cyclic voltammetric study of MnO₂ electrode in Zn/GPE/MnO₂ cell clearly shows intercalation/deintercalation of Zn²⁺.     

On the role of the interface charge in non-ideal metal–semiconductor contacts

The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems.