Evidence for a second,local contact condition for a planar electric double layer containing size and valency asymmetric ions

A generalised form of a local contact condition for the charge profile in a primitive model planar double layer [Bhuiyan, Outhwaite, and Henderson, Mol. Phys. 107, 343 (2009)] at low electrode charge is examined for completely asymmetric, binary electrolytes. The cation and anion sizes are taken to be different from each other with the valencies being 2⁺:1^? or 1⁺:2^?, while the electrode surface charge density is varied from being negative through zero to being positive. Monte Carlo simulation data obtained for such double layer systems at varying ionic radius ratios and electrolyte concentrations suggest the generalised contact relation to be valid at low charge on the electrode.     

Measurements of saturated basic and acidic rock electrical conductivities at lower crustal temperatures and high pressures

Abstract

Laboratory measurements of the electrical conductivity of brine saturated acidic and metabasic rocks were done at confining pressures up to 0.2 GPa, high pore pressures and temperatures of 900°C. Acidic rocks showed conductivities insufficient to explain the lower crustal high conductivity layer. Basic rocks, however, showed conductivities consistent with the high conductivity layer at those temperatures that the layer is thought to possess.     

Interfacial microstructures and impact properties for Nb/MOSi2 laminate composites

The purpose of present work is to investigate effects of fabricating temperature and ZrO₂, SiC and NbSi₂ addition on interfacial reaction layer and impact properties for Nb/MoSi₂ laminate composites. Four types of laminate composites alternating four layers of Nb foil with each MoSi₂, mixture layer containing ZrO₂. SiC and NbSi₂ particles were fabricated by hot pressing. The volume fraction of Nb foil involved in these system was nominally 10 vol%. It has been found that the impact value of Nb/MoSi₂ laminate composites decreased at a fabricating temperature higher than 1523 K, since the thickness of reaction layer between Nb and MoSi₂ increased along with fabricating temperature. However, the addition ofZrO₂ particles to Nb/MoSi₂ laminate composites fabricated at 1623 K resulted in a change of the interfacial microstructure as well as a reduction of the reaction layer. Nb/MoSi₂-ZrO₂ laminate composites maintained the same density as that of Nb/MoSi₂ laminate composites fabricated at 1773 K and showed a higher impact value than that of Nb/MoSi₂ laminate composites at 1523 K.     

Fractal and structural aspects of adhesion in particulate-filled polymer composites

Two types of composites based on poly(hydroxy ether) and graphite with various amounts of a filler have been investigated by various methods. The methods have been used to estimate the characteristics of adhesion and interfacial layer, including its thickness and tensile strength and interdependence between these values and adhesion. The results are treated on the basis of the theory of irreversible aggregation, cluster theory of the polymer structure and fractal analysis. It is established that all important characteristics of adhesion, interfacial layer and mechanical properties are interconnected with the difference between fractal dimensions of the surface of the aggregates of filler particles and of a polymer matrix, whose structure is distorted under the influence of the filler surface.     

The influence of SiCp oxidized on the interface layer and thermal conductivity of SiCp/Al composites

In this work, oxidation of silicon carbide particles (SiCp) at elevated temperature and its influence on the interface layer and thermal conductivity of SiCp/ZL101 composites prepared using pressure infiltration process were investigated respectively. It is found that initial temperature for the oxidation of SiCp is about 850?°C, and that the oxidation increment of SiCp and the thickness of SiO₂ layer increase with the increase in pre-oxidation temperature and time, when the oxidized temperature exceeds 1100?°C, or the duration time exceeds 2?h at 1100?°C, a small amount of ablation will take place on the SiCp, as well as the oxidized layer has some loss. The formation of SiO₂ layer can provide certain interface reactions with interface layers (3.1–6.36?μm), and the higher the thickness of SiO₂ layer, the thicker the interface layer in SiCp/Al composites. However, the thickness of SiO₂ layer is more than 5.9?μm, which is not benefit for the formation of interface layer. With the increase in the thickness of interface layer, thermal conductivity declines, but is not linear.     

非晶硅界面缓冲层对非晶硅锗电池性能的影响

针对非晶硅锗电池本征层高锗含量时界面带隙失配以及高界面缺陷密度造成电池开路电压和填充因子下降的问题,通过在PI界面插入具有合适带隙的非晶硅缓冲层,不仅有效缓和了带隙失配,降低界面复合,同时也通过降低界面缺陷密度改善内建电场分布,从而提高了电池的收集效率. 进一步引入IN界面缓冲层以及对非晶硅锗本征层进行能带梯度设计,在仅采用Al背电极时,单结非晶硅锗电池转换效率达8.72%. 关键词： 非晶硅缓冲层 非晶硅锗薄膜太阳电池 带隙 界面     

PECVD分层结构对提高氢化非晶硅TFT迁移率的影响

为了进一步提高氢化非晶硅薄膜晶体管 (a-Si:H TFT) 的场效应电子迁移率, 研究了批量生产条件下对欧姆接触层和栅极绝缘层进行多层 制备, 不同的工艺参数对a-Si:H TFT场效应电子迁移率的影响. 研究表明随着对欧姆接触层 (n⁺层) 分层数的增加, 以及低速生长的栅极绝缘层 (GL层) 和高速生长的栅极绝缘层 (GH 层) 厚度比值提高, a-Si:H TFT的场效应迁移率得到提升. 当n⁺层分层数达到 3层, GL层和GH层厚度比值为4:11 时, 器件的场效应电子迁移率达到0.66 cm²/V·s, 比传统工艺提高了约一倍, 显著改善了a-Si:H TFT 的电学特性, 并在量产线上得到了验证. 关键词： 非晶硅薄膜晶体管 电子迁移率 欧姆接触层 栅极绝缘层     

网络转型下接入层建设探讨

从介绍综合AC的建设模式及对设备要求入手,阐述了面向网络转型的NGN＋综合AC解决方案.     

Calculation of complex near-wall turbulent flows with a low-Reynolds-number k-ϵ model

An improved low-Reynolds-number k-? model has been formulated and tested against a range of DNS (direct numerical simulation) and experimental data for channel and complex shear layer flows. The model utilizes a new form of damping function adopted to account for both wall proximity effects and viscosity influences and a more flexible damping argument based on the gradient of the turbulent kinetic energy on the wall. Additionally, the extra production of the inhomogeneous part of the viscous dissipation near a wall has been added to the dissipation equation with significantly improved results. The proposed model was successfully applied to the calculation of a range of wall shear layers in zero, adverse and favourable pressure gradients as well as backward-facing-step separated flows.     

光学玻璃加工破坏层研究及粗磨、精磨、抛光工序加工余量的合理匹配

本文通过用五种散粒磨料（碳化硅）、五种固着磨料（金刚石）对八大类常用光学玻璃进行加工，用扫瞄电子显微镜观察其表面形貌，用抛测法测出其破坏层深度，得出一系列破坏层的深度数值，从而找出破坏层与磨料之问的函数关系。以破坏层的绝对深度为依据，得出光学加工中精磨、抛光工序的加工余量的合理匹配值。