Si1-xGex/Si应变材料的生长及热稳定性研究

利用分子束外延（MBE）技术生长了Ge组份为0.1-0.46的Si1-xGex外延层。X射线衍射线测试表明，SiGe/Si异质结材料具有良好的结晶质量和陡峭界面，其它参数与可准确控制。通过X射线双晶衍射摆曲线方法，研究了经700℃、800℃和900℃退火后应变SiGe/Si异质结材料的热稳定性。结果表明，随着退火温度的提高，应变层垂直应变逐渐减小，并发生了应变弛豫，导致晶体质量退化；且Ge组分越小，Si1-xGex应变结构的热稳定性越好；室温下长时间存放的应变材料性能稳定。     

Mie散射激光雷达研究成都地区大气边界层结构

基于Mie散射大气激光雷达,对成都地区大气边界层结构随时间变化的特性进行了研究。首先,应用Klett算法对大气激光雷达回波信号进行了反演,得到大气消光系数和后向散射系数。然后,通过对大气后向散射系数曲线进行拟合得到大气边界层混合层高度以及卷夹层厚度等特征参量。基于实测数据对成都地区大气回波信号进行了反演,结果表明,成都地区大气边界层混合层高度较低,卷夹层厚度较薄,且随时间变化的趋势较缓慢,这与成都地区特殊的地理状况有关。     

Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells

Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.     

IP视频宽带服务器集群结构及实现

随着宽带网络的建设，IP视频应用的逐步普及，现有的基于集中控制／传输模式的服务器将成为系统的瓶颈。本分析了传统视频数据传输方式的不足，提出了利用Linux的Iptables建立分布式服务器集群模式，及采用渐进传输和动态缓冲区等技术改进视频数据传输的具体方案。从改进服务器体系结构和视频数据传输两方面人手，解决IP视频服务器的瓶颈问题。     

SFT型半硬同轴电缆中内导体的选用

SFT型半硬同轴电缆要求其内导体具有较高的强度和较低的导体损耗。从材料、物理状态、尺寸等方面详细阐述了内导体的选择过程。指出了尺寸一致性较好的银层厚度为3um的30％IACS软态镀银铜包钢线作为SFT型半硬同轴电缆的内导体较为合适。     

面向卫星-地面协同通信系统的物理层安全传输设计

为增强多窃听者场景下的卫星-地面协同通信系统数据传输安全性,首先建立以卫星链路物理层安全传输速率最大化为优化准则、地面链路传输质量和信号发送功率为约束条件的卫星-地面协同传输优化问题.由于该优化问题的非凸性,随后通过引入辅助变量,将原问题分解为主、次两个子问题进行迭代求解,其中主问题为一维搜索问题,次问题则需进一步借助半正定松弛和矩阵变换方法转换为等价凸优化问题.最终,提出一种基于物理层安全的卫星-地面协同传输设计方案.计算机仿真结果表明,信号发射功率和卫星天线数的增加可提升系统安全速率,而窃听者数量的增加则会使得系统安全性降低.     

Investigation of HgCdTe p-n device structures grown by liquid-phase epitaxy

The microstructure of p-n device structures grown by liquid-phase epitaxy (LPE) on CdZnTe substrates has been evaluated using transmission electron microscopy (TEM). The devices consisted of thick (∼21-μm) n-type layers and thin (∼1.6-μm) p-type layers, with final CdTe (∼0.5 μm) passivation layers. Initial observations revealed small defects, both within the n-type layer (doped with 8×10¹⁴/cm³ of In) and also within the p-type layer but at a much reduced level. These defects were not visible, however, in cross-sectional samples prepared by ion milling with the sample held at liquid nitrogen temperature. Only isolated growth defects were observed in samples having low indium doping levels (2×10¹⁴/cm³). The CdTe passivation layers were generally columnar and polycrystalline, and interfaces with the p-type HgCdTe layers were uneven. No obvious structural changes were apparent in the region of the CdTe/HgCdTe interfaces as a result of annealing at 250°C.     

高速DSP图像处理系统中模拟视频输出接口电路设计

文章提出了高速DSP模拟视频输出接口的三个主要指标,分析了接口电路的构造方法,设计了实际的接口电路,并阐述了其工作原理;最后探讨了系统编程时应注意的几个关键问题.     

Polycrystalline silicon films prepared by metal-induced crystallisation using pre- and post-deposited aluminium on amorphous silicon

We report on the successful fabrication of polycrystalline silicon films by aluminium-induced crystallisation (AIC) of Radio frequency (rf) plasma-enhanced chemical vapour deposited (PECVD) a-Si films. The effects of annealing at different temperatures (300 and 400°C), below the eutectic temperature of the Si–Al binary system, on the crystallisation process have been studied. This work emphasises the important role of the position of the Al layer with respect to the Si layer on the crystallisation process. The properties of the crystallised films were characterised using X-ray diffraction, Raman spectroscopy, ellipsometry, field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). With an increase in the annealing temperature, it was found that the degree of crystallisation of annealed a-Si/Al and Al/a-Si films increased. The results showed that the arrangement where the Al was on top of the a-Si had a more prominent effect on crystallisation enhancement than when Al was below the a-Si. The interfacial layer between the Al and a-Si film is crucial because it influences the layer-exchange process during annealing. The oxide layer formed between the Al and the a-Si layers greatly retards the crystallisation process in the case of the Al/Si arrangement. Our investigations suggest that polycrystalline Si films formed by AIC can be used as a seed layer in solar cell fabrication.     

基于曲折网格表面的二维通信技术

二维通信系统(Two-dimensional Communication System, 2DCS)是一种以物体表面为通信介质的新型 通信技术,可以提供无线供电以及安全、高速的数据传输服务。为了改善二维通信中的供电性能,文中提出了一种 增强功率传输性能的二维通信导波板,该导波板包含三层:导电层、介质层和具有曲折网格的表面层。微波通过同 轴导波耦合器馈入二维通信导波板,可以在呈电感性的曲折网格表面任何一点耦合出表面层。经电磁仿真和实际 测试验证,与以前的二维通信导波板相比,曲折网格结构和阻抗匹配的同轴导波馈电器改善了二维通信导波板的传 输性能和电磁场分布的空间均匀性。