一种应用于HDMI接收端的宽频带锁相环设计

基于110 nm CMOS工艺设计了一种应用于HDMI接收端电路的宽频带低抖动锁相环。采用一种改进型双环结构电荷泵,在25～250 MHz的宽输入频率范围内实现了快速锁定。通过高相噪性能的伪差分环形振荡器产生了调谐范围为125 MHz～1.25 GHz的时钟信号。仿真实验结果表明,该锁相环的锁定时间小于1.2μs,在振荡器工作频率为0.8 GHz时,其相位噪声为-100.0 dBc/Hz@1 MHz,输出时钟峰峰值抖动为4.49 ps。     

Balancing MXene Surface Termination and Interlayer Spacing Enables Superior Microwave Absorption

Surface chemistry and interlayer engineering determines the electrical properties of 2D MXene. However, it remains challenging to regulate the surface and interfacial chemistry of MXene simultaneously. Herein, simultaneous modulation of Ti₃C₂T_x MXene surface termination and layer spacing by alkali treatment are achieved. The electrical and electromagnetic properties of Ti₃C₂T_x are investigated in detail with respect to KOH and ammonia concentration dependence. A high concentration of KOH caused the Ti₃C₂T_x layer spacing to expand to 13.7 Å and the surface O/F ratio to increase to 33.84. Because of its weaker ionization effect, ammonia provides finer tuning compared to the drastic intercalation of KOH with a thorough sweeping of the F-containing groups. Ti₃C₂T_x is enriched with conductive -OH termination after ammonia treatment, which achieves an effective balance with the increased interlayer resistance. Therefore, NH₃H₂O-Ti₃C₂T_x achieves broad-band impedance matching and exhibits an efficient microwave loss of −49.1 dB at a low thickness of 1.7 mm, with an effective frequency bandwidth of 3.9 GHz. The results herein optimize the electrical properties of Ti₃C₂T_x using surface and interfacial chemistry to achieve broad microwave absorption, providing a framework for enhancing the electromagnetic wave loss of intrinsic MXene.     

Halogenated Ti3C2 MXenes Prepared by Microwave Molten Salt for Hg0 Photo-Oxidation

Ti₃C₂ MXenes with different halogen modifications are prepared rapidly and efficiently by microwave molten salt method, and the MXene surface functional group modification is successfully achieved to address the problems of low purity, complex functional groups, and uncontrollable energy band structure of MXenes obtained by traditional liquid phase etching. Among them, the modification of the iodine (I) functional group onto the surface of Ti₃C₂ changes the energy band structure and band gap, resulting in easier photoexcitation and more photogenerated carriers. The increased Fermi energy is closer to the conduction band, the decreased surface work function weakens the electron confinement ability. The photogenerated carriers can migrate to the surface of the material more easily with extended lifetime, so the activity of the catalyst is improved. Further, for gaseous monomeric mercury (Hg⁰) photo-oxidative removal, Ti₃C₂-I₂ exhibits 85.5% efficiency of Hg⁰ photo-oxidative removal under visible light. Based on the experimental characterization and density functional theory calculations, a mechanism for the photo-oxidative removal of Hg° from Ti₃C₂-I₂ MXene is proposed, which provides a valuable strategy for studying Ti₃C₂ MXenes in the field of photocatalysis.     

Relaxation-Induced Significant Room-Temperature Dielectric Pulsing Effects

Thermo-responsive dielectric materials are in urgent demand owing to the rapid development of smart electronic/electrical systems. Although different types and structures of thermally responsive dielectric materials have been continuously reported, their dielectric response behaviors all originate from thermodynamic phase transitions. Herein, it is demonstrated that structural relaxation in poly(vinylidene fluoride) (PVDF), a non-thermodynamic phase transition, can induce a significant thermal dielectric pulse at room temperature. The dielectric pulse strength of up to 6.3 × 10⁵ at 20 Hz, with a dielectric pulsing temperature of 24 °C, is achieved from polyethylene glycol (PEG)-PVDF coaxial nanofibrous films (PVDF@PEG), fabricated via a continuous blow spinning method. Moreover, the films exhibit excellent flexibility, adjustable strength and toughness, switchable hydrophilicity/hydrophobicity, and effective thermal management capability. The relaxation-induced dielectric pulsing effect, outstanding multifunctionality, and simple preparation combine to promote further scalability and prospects of PVDF@PEG. In particular, the work contributes to the discovery of the relaxation-induced dielectric response mechanism, which provides a new strategy for the generation of thermo-responsive dielectric materials.     

面向电子战射频光传输的宽带射频信号杂散产生机理及优化方法

针对电子战系统的宽带射频信号波分复用传输,通过理论分析给出了微波光子链路中各关键参量对杂散信号的影响规律,提出了非均匀信道间隔分配的除杂优化方法。该方法通过微调各通道的波长,使四波混频产生的杂散频率超过电子战接收机带宽,从而降低杂散对系统的影响。该方案实现简单,且无需改变现有电子战系统架构,具有较好的工程实现性。实验结果表明:与等波长间隔相比,5通道非均匀波分复用信号传输1 km时,在接收机带宽内四波混频引起的杂散得到了显著优化,动态范围提升了26 dB以上。     

相位调制微波光传输链路特性分析（特邀）

常规的微波光子系统采用强度调制方式实现微波信号的电光转换,由于调制器采用马赫-曾德尔干涉结构(MZI),系统性能不仅受到自身正弦响应特性的制约,而且需要进行偏置点控制,因此存在动态范围受限、系统控制复杂以及3 dB固有损耗带来的效率不足的问题,而采用相位调制可避免该问题。围绕相位调制光传输链路,为了完成相位调制信号的光电解调,文章提出采用薄膜滤波器通过边带抑制与边带选通两种方式实现相位调制到强度调制的转换,并分析了链路射频性能与器件参数之间的映射关系。实测对比了相位调制与常规强度调制链路之间的传输特性,通过分析可知,在相同链路配置条件下,相位调制链路具有更高的传输效率,而且光滤波带来的均衡作用,使得相位调制链路的3 dB带宽比强度调制链路大两倍。     

一种高效的大功率宽带整流电路

提出了一种由π型匹配枝节、整流二极管、直通滤波器组成的高效大功率宽带整流电路。采用2只HSMS-282P肖特基二极管桥设计单级倍压整流电路,使电路在整流效率不下降的情况下提升输入的功率容量;采用π型匹配枝节实现阻抗匹配,使电路具有宽频特性,同时其并联短路枝节可以作为输入滤波器,实现小型化和整流效率的提高。直通滤波器用于抑制基频和二极管非线性产生的高次谐波,以提高整流效率。实测结果表示：在2.05~2.6 GHz带宽内整流效率大于60%;在2.45 GHz工作频率和35 dBm输入功率下,整流电路在330 Ω负载上获得70%的整流效率。该整流电路具有整流效率高、功率容量大、频带宽的特性,可为工程人员设计大功率微波整流电路提供设计指导。     

通信波段稀土离子掺杂固态量子存储进展

量子互联网是实现多方量子通信、分布式量子计算等量子信息技术的重要基础,量子存储器作为实现互联网的重要部件,对量子信息技术的发展、应用具有举足轻重的作用。如今遍布全球的光纤网络已经是信息传输的有力载体,通信波段的量子存储器因容易嵌入到当前的光纤网络中而备受重视。聚焦于稀土离子掺杂固态体系的通信波段光量子存储,首先介绍稀土离子掺杂固态量子存储的基本原理,包括稀土掺杂材料特性以及存储协议等,然后介绍目前的研究现状,最后简要分析其未来的发展趋势,并对量子互联网的构建做出展望。     

硅基微波光子波束形成器研究进展

微波波束形成器是相控阵雷达、5G通信基站等射频发射系统中的核心器件。近年来硅基微波光子波束形成器以其带宽大、尺寸紧凑、重量轻、损耗低、抗电磁干扰等优势成为微波光子学中的研究热点之一。文章从微波光子波束形成的基本原理和性能指标出发,总结了近年来应用于微波光子波束形成器的多种集成可调光学真延迟线结构和波束形成网络架构,并介绍了微波光子波束形成系统集成芯片和自动化控制的最新进展,最后对硅基微波光子波束形成器的未来发展进行了展望。     

一种加载铁氧体磁环的高功率宽带巴伦

针对高功率天线的差分馈电和阻抗匹配问题,文中提出了一种基于同轴线结构加载铁氧体磁环的宽 带巴伦模型。双同轴线具有阻抗变换功能和较好的功率承载能力,铁氧体磁环改善了巴伦在低频时的输入匹配和 两个输出端口不平衡度。仿真和实测表明,此巴伦在0. 05~1. 24 GHz 内回波损耗低于-10 dB,去除3. 0 dB 系统插损 后单端插入损耗在1. 5 dB 以内,两端输出的相位不平衡度在5°以内,幅度不平衡度在2%以内。通过分析巴伦的电 磁热损耗场、温度场和应力形变场,验证了巴伦在高功率馈电下的工作性能,结果表明此巴伦在工作频带内能够承 受500 W 的功率。