Zr‐Doped Indium Oxide (IZRO) Transparent Electrodes for Perovskite‐Based Tandem Solar Cells

Parasitic absorption in transparent electrodes is one of the main roadblocks to enabling power conversion efficiencies (PCEs) for perovskite‐based tandem solar cells beyond 30%. To reduce such losses and maximize light coupling, the broadband transparency of such electrodes should be improved, especially at the front of the device. Here, the excellent properties of Zr‐doped indium oxide (IZRO) transparent electrodes for such applications, with improved near‐infrared (NIR) response, compared to conventional tin‐doped indium oxide (ITO) electrodes, are shown. Optimized IZRO films feature a very high electron mobility (up to ≈77 cm² V^?1 s^?1), enabling highly infrared transparent films with a very low sheet resistance (≈18 Ω □^?1 for annealed 100 nm films). For devices, this translates in a parasitic absorption of only ≈5% for IZRO within the solar spectrum (250–2500 nm range), to be compared with ≈10% for commercial ITO. Fundamentally, it is found that the high conductivity of annealed IZRO films is directly linked to promoted crystallinity of the indium oxide (In₂O₃) films due to Zr‐doping. Overall, on a four‐terminal perovskite/silicon tandem device level, an absolute 3.5 mA cm^?2 short‐circuit current improvement in silicon bottom cells is obtained by replacing commercial ITO electrodes with IZRO, resulting in improving the PCE from 23.3% to 26.2%.     

热电制冷红外探测器氧化铍瓷冷板和散热板导热系数的测量

氧化铍恣导热系数是表征热电制冷红外探测器半导体制冷器部件冷板和散热板导热能力的关键参数。本文论述了氧化瓷导热系数的测量原理和方法，推导了计算公式，分析了影响测量的关键因素并提出了相应措施，对样品制作和装配工艺提出了要求。最后，给出了样品实例测并得出结论。     

直流磁控溅射ITO薄膜的正交试验分析

利用直流磁控溅射系统制备ITO薄膜,采用正交试验表格L32(48)安排试验.测试了薄膜的方阻和透过率,分析了8个工艺参数对薄膜电光特性的影响,其中沉积气压、氩氧流量比和退火温度的影响最大.分析得到优化工艺参数为:沉积气压2×133.322 4 mPa、氩氧流量比16∶0.5、退火温度427 ℃、靶基间距15、退火时间1 h、溅射功率300 W、退火氛围为真空、沉积温度227 ℃.在此工艺参数下制备的ITO薄膜方阻为17 Ω/□,电阻率为1.87×10-4Ω·cm,在可见光区域平均透过率为85.13%.     

(Cd,Co,Nb)掺杂的SnO2压敏材料的电学性质

研究了Cd对(Co，Nb)掺杂SnO2压敏材料电学性质的影响。组分为97．65％SnO2 O．75％Co2O3 0．10％Nb2O5 1．50％CdO的压敏电阻具有最大非线性系数(a=22．2)和最高的势垒(ψB=0．761eV)．当CdO的摩尔分数从0增加到3％时，(Co，Nb)掺杂SnO2压敏电阻的击穿电压从366V／mm增大到556V／mm，1kHz时的相对介电常数从1429减小到1108。晶界势垒高度测量揭示，SnO2的晶粒尺寸的减小是击穿电压增高和介电常数减小的主要原因。对Cd掺杂量增加引起SnO2晶粒减小的根源进行了解释。     

Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering

Ga2O3/ITO films were prepared by magnetron sputtering on quartz glass substrates. The transmittance and sheet resistance of ITO films and Ga2O3/ITO films were measured by using a double beam spectrophotometer and four point probes. The effect of the ITO layer and Ga2O3 layer thickness on the electrical and optical properties of Ga2O3/ITO bi-layer films were investigated in detail. Ga2O3 (50 nm)/ITO (23 nm) films exhibited a low sheet resistance of 323 Ω/□ and high deep ultraviolet transmittance of 77.6% at a wavelength of 280 nm. The ITO layer controls the ultraviolet transmittance and sheet resistance of Ga2O3/ITO films. The Ga2O3 layer thickness has a marked effect on the transmission spectral shape of Ga2O3/ITO films in the violet spectral region.     

氧化热处理对VO2薄膜红外光学相变特性的影响

采用直流磁控溅射法在硅基底上制备VO2薄膜,并对薄膜氧化热处理。分别对热处理前后薄膜进行X射线衍射(XRD)、傅里叶变换红外光谱(FTIR)透射率测试,分析了热处理对VO2薄膜晶相成分与红外透射率相变特性的影响。实验分析表明,经热处理的VO2发生非晶态向晶态转变,单斜金红石结构VO2(011)晶体具有明显择优取向,晶粒尺寸均匀度提高,且薄膜的红外透射率具有明显相变特性,相变温度为60.5℃,3~5μm、8~12μm波段的红外透射率对比值达到99%,适合应用于红外探测器的激光防护研究。     

氧化镍纳米晶体的制备及其过程分析

为了开发一种新型纳米氧化镍催化剂,能有效地应用于生物质气化过程中去除焦油,本文采用均匀沉淀法成功地制备了纳米氧化镍晶体,并利用TGA、FTIR、XRD、BET、YEM等分析手段对前驱体和产品的性能进行了表征.同时,对前驱体的分解过程进行了全面的分析.分析结果表明前驱体是水合碱式碳酸镍,其分子式为NiCO3·Ni(OH)2·nH2O,它能在360℃下完全分解转化为纳米NiO,同时煅烧条件对合成纳米NiO的晶体粒径影响很大.实验证实所得纳米NiO颗粒呈球形,分散性好,纯度较高,属立方晶系结构,平均粒径约为7.5nm,其BET表面积为187.98m2/g,这显示纳米NiO晶体具有作为高效催化材料的应用可行性.     

低温制备≥99.5%多晶氧化铝陶瓷

本文通过引入稀土氧化物Y2O3、Tm2O3为烧结助剂低温制备了氧化铝含量大于99.5;的多晶氧化铝陶瓷.实验表明:稀土氧化物的加入能够明显降低99.5;多晶氧化铝陶瓷的烧结温度,提高致密度.Y2O3、Tm2O3混合烧结助剂与单一稀土氧化物的烧结助剂相比能够明显抑制晶粒的生长,促进晶粒的均匀发育.当Y2O3+Tm2O3的含量为0.3;质量分数时,99.5;多晶氧化铝陶瓷的相对密度可达99.2;理论密度,抗弯强度为533MPa,显微硬度为17.2GPa.陶瓷断裂主要以穿晶断裂为主.