稀疏多光纤光网配置算法对波长连续性限制的影响

针对波分复用（WDM）光网络在实现端到端业务链接时的波长连续性限制问题,提出了对光网络进行稀疏多光纤配置的方法。通过分析发现：稀疏多光纤配置能够使整个网络的性能受波长连续性限制的影响得到明显改善;具有稀疏多光纤配置的光网络长链路建链阻塞概率在全网阻塞率中的比例要高于使用相同数目波长转换器的光网络,这说明,波长转换器对于光网络的长链建链仍具有一定的优势。     

EONs中一种混合路径专有保护算法

为了降低带宽阻塞率,节约频谱资源,在动态业务到达的弹性光网络(EONs)场景下,不同业务请求的路径状况可能不同,因此不能确定单路径专有保护与带宽分割多路径专有保护的优劣.文章结合单路径专有保护和带宽分割多路径专有保护提出了一种混合路径专有保护(HDPP)算法.该算法利用路径的单位频谱效率和路径跳数计算了k条链路不相关候...     

超分子结构水杨酸根插层水滑石的组装及结构与性能研究

以锌铝水滑石ZnAl-CO3 LDHs为前体（主体），以乙二醇为分散介质，用离子 交换法组装了水杨酸根（客体）插层水滑石ZnAl-[o-HO(C6H4)COO]LDHs，并用XRD ，FT-IR，TG-DTA等手段对样品进行了表征。结果表明，能过控制离子交换条件， 水杨酸根阴离子可取代锌铝水滑石前体层间的CO3^2-离子，组装得到晶体结构良好 的水杨酸根插层水滑石。通过研究发现，主体水滑石层板与客体以静电力和氢键相 互作用，得到的超分子结构材料紫外阻隔作用增强并具有较好的稳定性，从而成为 一种集屏蔽和吸收双重功能的新型无机-有机得合紫外阻隔材料。     

Particle-number-conserving analysis of multiquasiparticle bands in ~(177)Lu

The experimental one-, three-, and five-quasiparticle bands in ~(177)Lu are analyzed by the particle-number conserving (PNC) method for treating the cranked shell model with pairing interaction, in which the blocking effects are taken into account exactly. The experimental moments of inertia are reproduced very well by PNC calculations with us free parameter.     

OVSF码分配算法研究

提出1种优先选择极左碎片的信道化码分配算法,该算法用很简单的方式降低了码阻塞率。将新算法与已有的极左法和权重法进行比较,理论分析和计算机仿真表明,极左碎片法具有与极左法相近的简单性,在码阻塞率和公平性方面几乎与权重法一样好,是简单、高效和公平的综合性能最好的算法。该算法可应用于以OVSF码作为信道化码的各种DS-CDMA系统。     

Optimization of Gold Nanoparticle-Based DNA Detection for Microarrays

DNA microarrays are promising tools for fast and highly parallel DNA detection by means of fluorescence or gold nanoparticle labeling. However, substrate modification with silanes (as a prerequisite for capture DNA binding) often leads to inhomogeneous surfaces and/or nonspecific binding of the labeled DNA. We examined both different substrate cleaning and activating protocols and also different blocking strategies for optimizing the procedures, especially those for nanoparticle labeling. Contact angle measurements as well as fluorescence microscopy, atomic force microscopy (AFM), and a flatbed scanner were used to analyze the multiple-step process. Although the examined different cleaning and activating protocols resulted in considerably different contact angles, meaning different substrate wettability, silanization led to similar hydrophobic surfaces which could be revealed as smooth surfaces of about 2–4 nm roughness. The two examined silanes (3-glycidoxypropyltrimethoxysilane (GOPS) and 3-aminopropyltriethoxysilane (APTES)) differed in their DNA binding homogeneity, maximum signal intensities, and sensitivity. Nonspecific gold binding on APTES/PDC surfaces could be blocked by treatment in 3% bovine serum albumin (BSA).     

Small Blocking Sets in PG(2, p3)

In this paper we show that a small minimalblocking set in PG(2,p³), with p 7,is of Rédei type.     

Ultra-Thin Si<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> Dislocation Blocking Layers for Ge/Strained Si CMOS Devices

We demonstrate ultra-thin (<150 nm) Si_1−x Ge _x dislocation blocking layers on Si substrates used for the fabrication of tensile-strained Si N channel metal oxide semiconductor (NMOS) and Ge P channel metal oxide semiconductor (PMOS) devices. These layers were grown using ultra high vacuum chemical vapor deposition (UHVCVD). The Ge mole fraction was varied in rapid, but distinct steps during the epitaxial layer growth. This results in several Si_1−x Ge _x interfaces in the epitaxially grown material with significant strain fields at these interfaces. The strain fields enable a dislocation blocking mechanism at the Si_1−x Ge _x interfaces on which we were able to deposit very smooth, atomically flat, tensile-strained Si and relaxed Ge layers for the fabrication of high mobility N and P channel metal oxide semiconductor (MOS) devices, respectively. Both N and P channel metal oxide semiconductor field effect transister (MOSFETs) were successfully fabricated using high-k dielectric and metal gates on these layers, demonstrating that this technique of using ultra-thin dislocation blocking layers might be ideal for incorporating high mobility channel materials in a conventional CMOS process.     

JTIDS系统仿真及其干扰探索

通过分析联合战术信息分发系统（JTIDS）的结构特点，建立了完整的JTIDS数据链路模型，实现了JTIDS全系统链路仿真。针对JTIDS采用扩频、跳频、冗余编码等抗干扰手段，提出了采用锯齿波调频干扰的方法，并对单载频窄带干扰和多载频宽带干扰进行了分析研究。仿真结果表明，多载频宽带干扰的效果优于单载频窄带干扰。     

Processing optimization: A way to improve the ionic conductivity and dielectric loss of electroactive polymers

Electro‐active polymers (EAPs) such as P(VDF‐TrFE‐CTFE) are greatly promising in the field of flexible sensors and actuators, but their low dielectric strength driven by ionic conductivity is a main concern for achieving high electrostrictive performance. It is well known that there is a quadratic dependence of the strain response and mechanical energy density on the applied electric field. This dependence highlights the importance of improving the electrical breakdown EAPs while reducing the dielectric losses. This article demonstrates that it is possible to dramatically increase the electrical breakdown and decrease the dielectric losses by controlling processing parameters of the polymer synthesis and fabrication procedure. As a result, an enhancement of around 70% is achieved in both the strain and blocking force. The effects on the dielectric losses of the polymer crystallinity, molecular weight, solvent purity, and crystallization temperature are also investigated. © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2018 , 56, 1164–1173