Individual charge traps in silicon nanowires

We study anomalies in the Coulomb blockade spectrum of a quantum dot formed in a silicon nanowire. These anomalies are attributed to electrostatic interaction with charge traps in the device. A simple model reproduces these anomalies accurately and we show how the capacitance matrices of the traps can be obtained from the shape of the anomalies. From these capacitance matrices we deduce that the traps are located near or inside the wire. Based on the occurrence of the anomalies in wires with different doping levels we infer that most of the traps are arsenic dopant states. In some cases the anomalies are accompanied by a random telegraph signal which allows time resolved monitoring of the occupation of the trap. The spin of the trap states is determined via the Zeeman shift.     

金属纳米晶存储器件数据保持能力建模与验证

金属纳米晶存储器件具有低功耗、高速读写特性及较高的可靠性,因此近年来在非易失存储器研究领域备受关注.对比分析讨论了量子限制效应与库仑阻塞效应对金属纳米晶费密能级的影响后,发现库仑阻塞效应会严重削弱器件数据保持能力.在综合考虑金属纳米晶量子限制效应和库仑阻塞效应的基础上,提出了金属纳米晶存储器件数据保持能力分析模型,并通过与相关研究文献的实验数据对比分析,证实了本模型的合理性.     

All two-input logic gates by a single-stage single electron box

In this paper, the design of all two-input logic gates is presented by only a single-stage single electron box (SEB) for the first time. All gates are constructed based on a same circuit. We have used unique periodic characteristics of SEB to design these gates and present all two-input logic gates (monotonic/non-monotonic, symmetric/non-symmetric) by a single-stage design. In conventional monotonic devices, such as MOSFETs, implementing non-monotonic logic gates such as XOR and XNOR is impossible by only a single-stage design, and a multistage design is required which leads to more complexity, higher power consumption and less speed of the gates. We present qualitative design at first and then detailed designs are investigated and optimised by using our previous works. All designs are verified by a single electron simulator which shows correct operation of the gates.     

Metal-oxide-semiconductor field effect transistor using ‘oxidizedμc-Si/ultrathin oxide’ gate structure

The metal-oxide-semiconductor (MOS) field effect transistor (FET) using ‘oxidized μ c-Si/ultrathin oxide’ gate structure was studied. It was found that this structure shows negative differential resistance behavior, which can be explained by the Coulomb blockade effect of trapped carriers and immediate tunneling into and tunneling out with gate bias variation. The requirements for the device with this structure showing negative differential resistance behavior are based on very weak resistive coupling between floating gate and channel. They are the thinness of the tunnel oxide film, the thickness ratio of the upper oxidized film and the tunnel oxide, and the channel threshold voltage. MOSFET with this gate structure is proposed as a new negative differential resistance device.     

Transition from the Kondo effect to a Coulomb blockade in an electron shuttle

We investigate the effect of the mechanical motion of a quantum dot on the transport properties of a quantum dot shuttle.Employing the equation of motion method for the nonequilibrium Green’s function,we show that the oscillation of the dot,i.e.,the time-dependent coupling between the dot’s electron and the reservoirs,can destroy the Kondo effect.With the increase in the oscillation frequency of the dot,the density of states of the quantum dot shuttle changes from the Kondo-like to a Coulomb-blockade pattern.Increasing the coupling between the dot and the electrodes may partly recover the Kondo peak in the spectrum of the density of states.Understanding of the effect of mechanical motion on the transport properties of an electron shuttle is important for the future application of nanoelectromechanical devices.     

Efficient Excitation of a Symmetric Collective Atomic State with a Single-Photon Through Dipole Blockade

In the famous quantum communication scheme developed by Duan et al.[L.M.Duan,M.D.Lukin,J.I.Cirac,and P.Zoller,Nature(London) 414(2001) 413],the probability of successful generating a symmetric collective atomic state with a single-photon emitted have to be far smaller than 1 to obtain an acceptable entangled state.Based on strong dipole-dipole interaction between two Rydberg atoms,two simultaneous excitations in an atomic ensemble are greatly suppressed,which makes it possible to excite a mesoscopic cold atomic ensemble into a near-ideal singly-excited symmetric collective state accompanied by a signal-photon with near unity success probability.     

多模光力系统中的非传统声子阻塞

本文提出在多模光力系统中实现声子阻塞.多模光力系统由一个机械模和两个光学模组成.研究发现,当光学模与机械模同时受到外加驱动场作用时,即使在弱光力耦合条件下也可以实现声子阻塞效应,即非传统声子阻塞效应;给出了非传统声子阻塞效应出现的最佳条件.另外,发现通过调节外加驱动场间强度的比值和相位差可以控制声子的统计性质,这为实现可控的单声子源提供了一个有效方法.最后,讨论了热声子对非传统声子阻塞的不利影响,发现适当提高驱动场强度有利于观测非传统声子阻塞效应.     

三体里德堡超级原子的关联动力学研究

因为寿命长,并且原子间相互作用容易操控,所以里德堡原子在量子信息与量子光学领域具有极大的吸引力.特别地,偶极阻塞效应成为执行很多量子信息处理任务的物理资源.本文基于严格的偶极阻塞效应,将捕获在三个磁光阱中的二能级里德堡原子系综看作超级原子,在此基础上研究原子数目可调控的三体里德堡超级原子的同相和反相动力学行为,同时实现W态和两种最大纠缠态的制备.本工作在量子操控和量子信息处理方面具有潜在的应用前景.     

串联组装双C60 的电子结构和输运特性

利用第一原理密度泛函理论计算组装C60形成能和电子结构,用半经典隧穿理论研究了串联C60的电子输运特性。结果显示：六边形对六边形双C60比边对边双C60稳定;库仑阻塞与系统的结构密切相关,并且只有阴极结比阳极结窄时,才会出现库仑阻塞;低温时出现非常明显库仑台阶,温度较高时其被热效应抑制。