串联组装双C60 的电子结构和输运特性

利用第一原理密度泛函理论计算组装C60形成能和电子结构,用半经典隧穿理论研究了串联C60的电子输运特性。结果显示：六边形对六边形双C60比边对边双C60稳定;库仑阻塞与系统的结构密切相关,并且只有阴极结比阳极结窄时,才会出现库仑阻塞;低温时出现非常明显库仑台阶,温度较高时其被热效应抑制。     

Influence of the thickness of the tunnel layer on the charging characteristics of Si nanocrystals embedded in an ultra-thin SiO2 layer

In this paper, we have studied the effect of the thickness of the initial SiO₂ layer (5–7 nm) on the charge and discharge properties of a 2D array of Si nanoparticles embedded in these SiO₂ layers fabricated by ultra-low-energy ion implantation (ULE-II) and annealing. The structural characteristics of these nanocrystal-based memories (position of the nanocrystals with respect to the electrodes, size and surface density of the particles in the plane) were studied by transmission electron microscopy (TEM) and energy filtered TEM (EF-TEM). Electrical characterizations were performed at room temperature using a nano-MOS capacitor to be able to address only a few nanoparticles (nps). EFTEM gives the measurements of oxide thickness, injection, control and nps distances, size and density. I–V and I–t measurements exhibit current peaks and random telegraph signal fluctuations that can be interpreted as due to quantized charging of the nps and to some electrostatic interactions between the trapped charges and the tunnelling current. We have shown that these characteristics strongly vary with the initial oxide thickness, exhibiting several charging/discharging events for the 7-nm-thick layer while charging events prevail in the case of 5-nm-thick layer. These results indicate that the probability of discharging phenomena is reduced when the tunnel layer thickness decreases.     

Prospects of Observing Ionic Coulomb Blockade in Artificial Ion Confinements

Nanofluidics encompasses a wide range of advanced approaches to study charge and mass transport at the nanoscale. Modern technologies allow us to develop and improve artificial nanofluidic platforms that confine ions in a way similar to single-ion channels in living cells. Therefore, nanofluidic platforms show great potential to act as a test field for theoretical models. This review aims to highlight ionic Coulomb blockade (ICB)—an effect that is proposed to be the key player of ion channel selectivity, which is based upon electrostatic exclusion limiting ion transport. Thus, in this perspective, we focus on the most promising approaches that have been reported on the subject. We consider ion confinements of various dimensionalities and highlight the most recent advancements in the field. Furthermore, we concentrate on the most critical obstacles associated with these studies and suggest possible solutions to advance the field further.     

金属结单电子晶体管的模型建立及实验验证

在正统理论的基础上，使用主方程法建立了金属结单电子晶体管的器件模型和算法流程．将电容、电阻和温度等参数代入器件模型得到的I-V特性曲线与实验结果吻合较好，从而验证了模型、算法以及程序流程的正确性．此外，通过详细讨论模拟与实验的三组曲线差别，得到模型使用主方程的稳态解是导致模拟与实验之间结果存在差别的主要原因，即求解含有时间的主方程将增加模拟精度；而且，指出镜像电荷引起的电势使电流随电压呈现指数增加的主要影响因素，明显偏离理论模拟的线性增加趋势．     

电子在耦合的多量子点器件中的动力学特性

本文通过对三量子点的对称和不对称耦合的研究,揭示了电子在耦合的三量子点体系中的动力学特性,研究发现,当三个量子点耦合在一起时,电子在三个量子点之间隧穿,在大多数情况下,电子在第三个量子点的几率小于1。     

单电子晶体管电导振荡及其解释

文中概述了单电子晶体管电导振荡的特点并进行了理论解释，进而讨论了介观电容及电容谱的概念。     

All two-input logic gates by a single-stage single electron box

In this paper, the design of all two-input logic gates is presented by only a single-stage single electron box (SEB) for the first time. All gates are constructed based on a same circuit. We have used unique periodic characteristics of SEB to design these gates and present all two-input logic gates (monotonic/non-monotonic, symmetric/non-symmetric) by a single-stage design. In conventional monotonic devices, such as MOSFETs, implementing non-monotonic logic gates such as XOR and XNOR is impossible by only a single-stage design, and a multistage design is required which leads to more complexity, higher power consumption and less speed of the gates. We present qualitative design at first and then detailed designs are investigated and optimised by using our previous works. All designs are verified by a single electron simulator which shows correct operation of the gates.     

单电子器件

综述了单电子器件的研究进展,包括单电子器件的简要历史、研究现状、基本理论、工作性能及制作工艺,并且深入讨论了本领域今后的发展方向。     

金属结单电子晶体管的模型建立及实验验证

在正统理论的基础上,使用主方程法建立了金属结单电子晶体管的器件模型和算法流程.将电容、电阻和温度等参数代入器件模型得到的I-Ⅴ特性曲线与实验结果吻合较好,从而验证了模型、算法以及程序流程的正确性.此外,通过详细讨论模拟与实验的三组曲线差别,得到模型使用主方程的稳态解是导致模拟与实验之间结果存在差别的主要原因,即求解含有时间的主方程将增加模拟精度;而且,指出镜像电荷引起的电势使电流随电压呈现指数增加的主要影响因素,明显偏离理论模拟的线性增加趋势.     

Quantum state swap for two trapped Rydberg atoms

The quantum swap gate is one of the most useful gates for quantum computation. Two-qubit entanglement and a controlled-NOT quantum gate in a neutral Rydberg atom system have been achieved in recent experiments. It is therefore very interesting to propose a scheme here for swapping a quantum state between two trapped neutral atoms via the Rydberg blockade mechanism. The atoms interact with a sequence of laser pulses without individual addressing. The errors of the swap gate due to imprecision of pulse length, finite Rydberg interaction, and atomic spontaneous emission are discussed.