电子束驱动的回旋激射不稳定性

对弱相对论性电子束驱动的回旋激射(maser)不稳定性的一般理论作了详细讨论.对在获得增长率实用表达式过程中若干解析表达式的推导与细节做了仔细的补充讨论和说明，还增加了增长率的近似表达式，并由此得到了回旋激射不稳定性主要特征的解析分析以及与精确计算的比较，使整个理论有一个完整的描述.侧重解析讨论，也提供了部分一般性的数值计算结果. 关键词： 回旋激射不稳定性 弱相对论性电子束 增长率     

离子束辅助沉积制备高功率激光薄膜的研究

综述了离子束辅助沉积技术在高功率激光薄膜制备中的应用研究进展.指出该技术在制备高激光损伤阈值的薄膜中存在的问题,即出现过高的堆积密度,会给薄膜带来杂质缺陷、化学计量比缺陷、损伤缺陷、晶界缺陷,制备薄膜的残余应力存在着压应力增加的趋势,会改变薄膜的晶体结构等.并指出了该研究领域的研究方向.     

Cu~+、Ag~+、Au~+与乙硫醇的气相化学反应

利用激光溅射 分子束的技术 ,结合反射飞行时间质谱计 ,研究了Cu+、Ag+、Au+与乙硫醇的气相化学反应。结果显示这三种金属离子与 (CH3 CH2 SH) n 反应形成一系列团簇离子M+(CH3 CH2 SH) n,且团簇离子尺寸不一样。Ag+、Au+与乙硫醇的反应还生成了 (CH3 CH2 SH) +n ,由此推测Cu+、Ag+、Au+与乙硫醇团簇的反应存在两种通道 ,一种通道是生成M+(CH3 CH2 SH) n,另一种是生成 (CH3 CH2 SH) +n 。Cu+、Au+与乙硫醇的反应还生成了M+(H2 S) (M =Cu、Au) ,但是实验中没有观察到Ag+(H2 S) ,理论计算表明Ag+(H2 S)很不稳定。另外 ,分析产物离子M+(CH3 CH2 SH) n 的强度发现 ,n =1～ 2之间存在明显的强度突变现象     

Spectral shifts and spectral switches in diffraction of ultrashort pulsed beams passing through a circular aperture

Based on the Fourier transform method, a simple closed-form expression for the on-axis power spectrum of ultrashort Gaussian pulsed beams in diffraction at a circular aperture is derived, which permits us to study spectral changes both analytically and numerically. It is shown that for diffracted pulsed beams there exist spectral red and blue shifts, spectral narrowing, and spectral switches in the near field. The aperture diffraction plays an important role in spectral switching, but both the truncation parameter and bandwidth (or equally, Fourier transform limited pulse duration) affect the behavior of spectral switches.     

Small and high-density GeSiC dots stacked on buried Ge hut-clusters in Si

Self-assembled GeSiC dots stacked on a Ge hut-cluster layer buried in Si have been investigated. The critical thickness for formation of GeSiC dots is reduced owing to the strain fields from the buried hut-clusters. By utilizing the stacked structure, the dot size is decreased and the uniformity is improved. The highest density of the GeSiC dots with stacked structures is 7.4×10¹⁰ cm⁻², which is six times larger than that of single GeSiC dots. The formation of the self-assembled GeSiC dots is strongly influenced by being stacked with buried Ge dots as well as C incorporation.     

The polarization property and irradiance distribution of incoherent and coherent Gaussian beam combinations

Based on the beam coherence-polarization (BCP) matrix, the polarization property of coherent and incoherent Gaussian beam combinations is studied in detail. The general expressions for the degree of polarization P of the resulting beam in case of incoherent and coherent combinations are derived. It is shown that P is dependent on the incoherent or coherent combination, propagation distance, separation, azimuth of the polarization plane and numbers of beamlets in general. The irradiance distribution of the resulting beam for the coherent cases depends on the azimuth of the polarization plane of beamlets. However, for the incoherent case it does not.     

LINEAR ACTIVE STRUCTURES AND MODES (Ⅱ)--DISCRETE SYSTEMS AND BEAMS

The basic concepts about the active structures and some attributes of the modes were presented in paper "Liner Active Structures and Modes ( Ⅰ ) ". The characteristics of the active discrete systems and active beams were discussed, especially, the stability of the active structures and the orthogonality of the eigenvectors. The notes about modes were portrayed by a model of a seven-storeyed building with sensors and actuators. The concept of the adjoint active structure was extended from the discrete systems to the beams that were the representations of the continuous structures. Two types of beams with different placements of the measuring and actuating systems were discussed in detail. One is the beam with the discrete sensors and actuators, and the other is the beam with distributed sensor and actuator function. The orthogonality conditions were derived with the modal shapes of the active beam and its adjoint active beam. An example shows that the variation of eigenvalues with feedback amplitude for the homo-configuration and non-homo-configuration active structures.     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.     

Ultrahigh‐molecular‐weight‐polyethylene‐fiber surface treatment by electron‐beam‐irradiation‐induced graft polymerization and its effect on adhesion in a styrene–butadiene rubber matrix

Aiming to develop a high‐performance fiber‐reinforced rubber from styrene–butadiene rubber (SBR), we applied a special technique using electron‐beam (EB)‐irradiation‐induced graft polymerization to ultrahigh‐molecular‐weight‐polyethylene (UHMWPE) fibers. The molecular interaction between the grafted UHMWPE fibers and an SBR matrix was studied through the evaluation of the adhesive behavior of the fibers in the SBR matrix. Although UHMWPE was chemically inert, two monomers, styrene and N‐vinyl formamide (NVF), were examined for graft polymerization onto the UHMWPE fiber surface. Styrene was not effective, but NVF was graft‐polymerized onto the UHMWPE fibers with this special method. A methanol/water mixture and dioxane were used as solvents for NVF, and the effects of the solvents on the grafting percentage of NVF were also examined. The methanol/water mixture was more effective. A grafting percentage of 16.4% was the highest obtained. This improved the adhesive force threefold with respect to that of untreated UHMWPE fibers. These results demonstrated that EB irradiation enabled graft polymerization to occur even on the inert surface of UHMWPE fibers. However, the mechanical properties of the fibers could be compromised according to the dose of EB irradiation. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 2595–2603, 2004     

聚焦慢速高荷态重离子束微束斑X射线源

利用电子束离子源(EBIS)或者电子束离子陷阱(EBIT)产生的慢速高电荷态重离子束轰击金属靶面,离子束与靶面作用并复合辐射特征X射线;并将高荷态离子束采用离子光学系统会聚为微细束后再与靶面作用,能够辐射出微米甚至亚微米级、纳米级的微束斑X射线.本文介绍这一新型微束斑X射线源的结构、机理及其特性等.