二维随机激光器的模式选择及阈值与饱和特性

基于将Maxwell方程与四能级原子系统速率方程相结合而建立起随机激光时域理论，并利用有限时域差分法，研究了二维随机介质中激光模式的输出特性与介质尺寸、外形及抽运速率等参数的关系.结果表明，与传统激光模式相似，随机激光模式的强度随抽运速率的变化不仅具有阈值特性，而且具有饱和特性.基于模式特性对介质及抽运参数的依赖关系，提出了二维随机激光器的选模方式，在很大程度上不同于传统激光器的选模方式. 关键词： 随机激光器 模式选择 无序介质中的光学特性     

复杂像散椭圆光束的轨道角动量的实验研究

提出一种直接测量光束的轨道角动量的方法，其原理是把具有轨道角动量的光束照射到一个金属靶上，使其在光束的角动量作用下发生转动. 通过测量靶转动的角度来计算光束的角动量值. 对几种不同参数的光束的轨道角动量进行了测量，获得了轨道角动量与光束参数之间的关系，实验结果与理论分析较好地符合. 关键词： 复杂像散椭圆光束 轨道角动量 测量     

Slow positron beam study of corrosion-related defects in pure iron

Corrosion-related defects of pure iron were investigated by measuring Doppler broadening energy spectra (DBES) of positron annihilation and positron annihilation lifetime (PAL). Defect profiles of the S-parameter from DBES as a function of positron incident energy up to 30 keV (i.e. ∼1 μm depth) were analyzed. The DBES data show that S-parameter increases as a function of positron incident energy (mean depth) after corrosion, and the increase in the S-parameter is larger near the surface than in the bulk due to corrosion. Furthermore, information on defect size from PAL data as a function of positron incident energy up to 10 keV (i.e. ∼0.2 μm depth) was analyzed. In the two-state trapping model, the lifetime τ₂ = 500 ps is ascribed to annihilation of positrons in voids with a size of the order of nanometer. τ₁, which decreases with depth from the surface to the bulk, is ascribed to the annihilation of positrons in dislocations and three-dimensional vacancy clusters. The corroded samples show a significant increase in τ₁ and the intensity I₂, and near the surface the corroded iron introduces both voids and large-size three-dimensional vacancy clusters. The size of vacancy clusters decreases with depth.     

Surface reconstructions of InGaAs alloys

The surface reconstructions of In_xGa_1−xAs alloys grown by molecular beam epitaxy on the (0 0 1) surfaces of GaAs and InAs have been studied by reflection high-energy electron diffraction and scanning tunnelling microscopy. A surface phase diagram is presented for the nominally strain-free alloy as a function of substrate temperature and alloy composition, and structural models for the commonly observed 3× reconstructions are discussed. Two new, electronically stable structural models are described that account for the transition of the In_xGa_1−xAs surface alloy from a c(4 × 4) to an asymmetric 3× reconstruction and that are fully consistent with all current experimental evidence.     

拉盖尔-高斯光束通过有硬边光阑光学系统的传输

采用将硬边光阑展为有限个复高斯函数之和的方法,得到了拉盖尔-高斯光束通过有硬边光阑近轴ABCD光学系统中传输的近似解析公式,作了数值计算以说明传输公式的应用,并对使用该式的误差作了讨论。     

An efficient calculation algorithm for focusing by plane ultrasonic transducers

In the present paper, we simulate focused wave fields generated by a system of plane transducers used in an immersion ultrasonic technique. The ultrasonic beam penetrates into the elastic medium through the fluid-solid boundary. A real-time computer algorithm is proposed to calculate stress components in the solid medium. It is shown that a good focusing wave structure can be provided by a pair of plane rectangular transducers, inclined with respect to each other and to the beam acoustic axis.     

垂直腔激光器中弛豫振荡频率的优化控制

从垂直腔面发射的半导体激光器（VCSELs）的结构出发，利用增益与载流子密度的广义对数关系，借助小信号分析法，推出了直接调制情形下驰豫振荡频率的严格解析关系。分析指出，量子阱器件的光子寿命并非越短越好，欲提高VCSELs的驰豫振荡频率，除了增加注入电流，提高微分增益等基本途径外，控制器件的结构参数可使驰豫振荡频率达到极大值。同时，自发辐射因子的可控性，以及降低稳态载流子密度，也都是提高VCSELs驰豫振荡频率和拓宽调制带宽的有效措施。     

光束偏转法自动测试激光等离子体冲击波系统的研制

根据光束偏转原理，研制了激光等离子体冲击波自动测试系统的硬件和软件。该系统使用计算机与可编程序控制器作为上下位机，采取上下位机通讯的方式控制步进电机及二维移动架的移动，以改变探测光的相对位置，并利用单模光纤和光电倍增管将探测到的光偏转信号传入数字示波器进行存储，最后计算机将示波器中采集到的光偏转信号进行分析处理。使用该系统对激光等离子冲击波的衰减过程进行了实际测试，得到了较为理想的实验结果。     

用拉盖尔-高斯激光对真空中电子直接加速

对用拉盖尔-高斯(LG)光束加速电子作了研究.结果表明，仅模指数为p和l=1的LG光束的纵向电场可用于加速电子.模指数为p和l=1的线偏振和圆偏振LG光束都对电子有加速效果.对轴上光场的相速度和群速度以及电子能量增益等物理特征作了讨论.给出了轴上光场的相速度和群速度、加速电位及电子能量增益等的解析表达式，并作了数值计算和分析. 关键词： 激光电子加速 拉盖尔-高斯光束 线偏振和圆偏振 能量增益     

Technique for Monolithic Fabrication of Microlens Arrays Integrated with Infrared CCD

Based on scalar diffraction theory, 8-phase-level 256×256 elements diffractive microlens array with element dimension of 50×33 μm2 have been fabricated on the back-side of PtSi(3～5 μm) infrared CCD. The measurement results indicated that the ratio of the signal-to-noise of the infrared CCD with microlens was increased by a factor of 2.8.