乘累加运算器的高性能解决方案

在设计数字信号处理器时我们经常要设计高性能的乘累加运算器，文章详细分析了乘累加运算器的结构，提出了其高性能设计方案并采用标准单元进行了实现，同时提出了DCT运算单元的高性能解决方案。     

Mixed Mode VLSI Implementation of a Neural Associative Memory

A mixed mode digital/analog special purpose VLSI hardware implementation of an associative memory with neural architecture is presented. The memory concept is based on a matrix architecture with binary storage elements holding the connection weights. To enhance the processing speed analog circuit techniques are applied to implement the algorithm for the association. To keep the memory density as high as possible two design strategies are considered. First, the number of transistors per storage element is kept to a minimum. In this paper a circuit technique that uses a single 6-transistor cell for weight storage and analog signal processing is proposed. Second, the device precision has been chosen to a moderate level to save area as much as possible. Since device mismatch limits the performance of analog circuits, the impact of device precision on the circuit performance is explicitly discussed. It is shown that the device precision limits the number of rows activated in parallel. Since the input vector as well as the output vector are considered to be sparsely coded it is concluded, that even for large matrices the proposed circuit technique is appropriate and ultra large scale integration with a large number of connection weights is feasible.     

水溶性防氧化剂在SMT用印制板上的应用

水溶性的防氧化剂是一种有机可焊性保护剂。其方法是在印制板完全阻焊、字符层的印刷，并经电检之后，通过表面浸渍在裸铜的贴片位或通孔内形成一种耐热性的有机可焊性膜层。这种有机、可焊、耐热的膜层，膜厚可达0.3-0.5mm，其分解的温度可达约300℃，传统的印制板的热风整平法亦无法满足QFP愈来愈密集的需求，同时也无法满足SMD表面平整度的要求，更无法适应PCB薄型化生产。烷基苯并咪唑的OSP法能弥补这项缺陷，因而在PCB业乃至SMT产业中得到了广泛的应用。     

(111)择优取向的Pb(Zr0.52Ti0.48)O3铁电薄膜的制备及研究

选用不同浓度的Pb(Zr_0.52Ti_0.48)O₃溶胶，用Sol-gel法在Pt/Ti/SiO₂/Si基片上沉积一层厚度不同的Pb(Zr_0.52Ti_0.48)O₃ (PZT52)过渡层，经400℃烘烤、550℃退火等程序后，再用Sol-gel法在PZT52过渡层上沉积Pb(Zr_0.52Ti_0.48)O _{关键词： PZT铁电薄膜 择优取向 过渡层 剩余极化强度}     

Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH₄/SiF₄ mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH₄ and SiF₄ radicals show that the SiH₄ radicals are important in the nucleation and growth of grains. However, SiF₄ radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF₄ in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.     

激光熔覆Ni基SiC合金涂层组织与性能的研究

利用5kWCO2连续波激光器在16Mn钢基材表面对含20%(体积比)SiC陶瓷粉末的镍基自熔性合金粉末进行激光熔覆得到Ni基SiC合金涂层(NiSiC)。研究了合金涂层的组织形貌及相结构,并用单纯的镍基合金涂层(Ni60)进行了显微硬度及滑动磨损性能的对比试验。结果表明,NiSiC合金涂层由γ枝晶及其间的共晶组织组成,主要组成相为γ-Ni,γ-(Ni,Fe)固溶体和(Cr,Fe)7C3,Cr23C6及(Cr,Si)3Ni3Si等化合物。添加SiC的镍基合金涂层NiSiC比单纯的镍基合金涂层Ni60具有较高的硬度和耐磨性。     

The microstructure of Cu films deposited by the self-ion assisted technique

The microstructures of Cu films deposited by the self-ion assisted, partially ionized beam (PIB) deposition technique under two different accelerating potentials, 0 KeV and 6 KeV, are compared. The 6 KeV film shows a bimodal (111) fiber and (100) fiber texture with an abundance of twin boundaries and a relatively large average grain size with a typical lognormal distribution. The 0 KeV film consists of small, mostly (111) oriented grains with islands of abnormally large (100) grains. The controlling factors for the abnormal growth of the (100) grains are discussed in relation to the observed microstructures, showing that all factors necessary for abnormal (100) growth are present in the films.     

Si基膜片型气敏传感器微结构单元的热学性能

微结构气敏传感器由于其微型化、低功耗、易阵列化和易批量生产等优点而受到国内外研究者的广泛关注。利用微机电系统（MEMS）加工技术，制备Si基膜片型微结构单元，并分析其热学性能。这种单元工作区温度为-300℃时，加热功率约75mW；并且膜片工作区的热质量很小，温度可以于毫秒量级的时间内，在室温和450℃之间调制。利用这种微结构单元，可以在温度调制方式下，研究气敏薄膜的电学特性和敏感机理。     

直流磁控溅射一步法原位制备MgB2超导薄膜

用MgB2靶,控制直流磁控溅射工作在异常辉光放电或弧光放电状态,在SrTiO3衬底上原位一次性得到了MgB2超导薄膜,其起始转变温度为32K,零电阻温度为15K. 关键词： 高温超导体 超导薄膜 磁控溅射 二硼化镁     

Two-component model of solar plages

By use of the 2-m Mcmath-Pierce telescope at Kitt Peak, the high-quality spectra of a plage with moderate brightness near the center of solar disk were obtained. The data include seven spectral lines, which are Hα, Hβ, CaII H and K lines and the infrared triplet. With the consideration of fine structures of solar plages, a two-component atmospheric model is constructed by keeping the cool component to be the quiet atmosphere. Three cases of the hot component are given for different filling factors where the temperature and density distribution are adjusted in order to reproduce the seven observed spectral profiles. We also briefly discuss the influence of the column density at the base of the corona, m0, and the macro-turbulent velocity on the required filling factor and computed profiles. The two-component model is compared with precious one-component semi-empirical models. The limitation of the model is pointed out and further improvement is indicated.