数据融合在C^3I系统中的应用

多传感器数据融合技术已在军事领域受到广泛重视，并逐步走向实际应用，本文简要介绍它的一般组成、特点以及在军事Ｃ＾３Ｉ系统应用中的主要功效。     

Gelation of poly(n-butylisocyanate) in benzene

Poly (n-butylisocyanate)-benzene solutions prepared by solubilization at 45°C, followed by aging at room temperature were found to be metastable for months, although, eventually, they separated into a birefringent polymer-rich phase and an isotropic solution. These metastable solutions, as well as isothermally phase-separated biphasic samples, flowed and exhibited dynamic moduli indicative of low polymer connectivity. By contrast samples prepared by a freeze-thaw cycle were uniformly and highly birefringent and showed network (gel) behavior at room temperature. The mechanism of gel formation is most likely the exclusion of the polymer from the benzene crystal during crystallization, forcing the polymer to align and exist at grain boundaries. Films formed from solutions have different moduli than those formed from gels, and are consistent with the proposed mechanism.     

On a generalized $L_2$ projection and some related stability estimates in Sobolev spaces

Summary. In this paper we investigate a stability estimate needed in hybrid finite and boundary element methods, especially in hybrid coupled domain decomposition methods including mortar finite elements. This stability estimate is equivalent to the stability of a generalized projection in certain Sobolev spaces. Using piecewise linear trial spaces and appropriate piecewise constant test spaces, the stability of the generalized projection is proved assuming some mesh conditions locally. Received April 11, 2000 / Revised version received February 15, 2001 / Published online July 25, 2001     

Schottky barrier heights of contact metals to p-type ZnSe

Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage (J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C⁻²-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level lower than 0.4 eV and/or increase of doping concentrations to a level higher than 10²⁰ cm⁻³ are essential to obtain an ohmic contact with contact resistivity of around 10⁻³ Ω·cm².     

Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy. The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH₃ over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring.     

具有势垒增强层的MSM光电探测器暗电流的计算

将具有完全晶格匹配势垒增强层的MSM－PD简化为一维模型，并通过理论分析，得出了它的暗电流特性，进一步得到器件暗电流与势垒增强层的关系。     

利用CARS方法研究超短脉冲激光的脉冲宽度

在理论上提出了利用两光束CARS/CSRS方法测量超短脉冲激光的三阶相关函数。实验上在几种样品中测量了CARS/CSRS的时间特性,得到了泵浦光脉冲,SCDL输出光脉冲以及受激喇曼散射光脉冲的宽度。     

ATM技术在校园网中的实时性应用

讨论了ＡＴＭ论坛关于局域网仿真技术的基本思想及其协议体系的工作过程，并介绍了利用局域网仿真技术在校园网中应用ＡＴＭ技术实现视频传输的方法。     

SDH中泊松分布下误块率与误码率的关系分析

本文较详细地介绍了ＳＤＨ中的ＢＩＰ误码校验方式，推导了泊松分布下，ＢＩＰ误块率与误码率的一般关系式，给出了ＳＤＨ中几种典型的误块率与误码率的关系曲线，并做了计算机模拟验证