New fabrication approach to develop a high birefringence photo-crosslinked film based on a sulfur-containing liquid crystalline molecule with large temperature dependence of birefringence

ABSTRACT

We present a new fabrication approach to achieve a high birefringence film by means of photopolymerization based on an alkylthio-containing rod-like liquid crystalline molecule exhibiting large temperature dependence of birefringence. We designed a new reactive mesogen having alkylthio linkages (BPM–S). It was found that BPM–S had a larger increment of birefringence with decreasing temperature, relative to commercially available alkoxy analog LC242. This result could be thought to be due to enhanced intermolecular attractive interaction for an alkylthio mesogen implied by the proximity of laterally neighboring molecules and cybotactic nematic tendency based on wide-angle X-ray measurement. The uniaxially-aligned photo-polymerized film for BPM–S showed higher birefringence than that for LC 242.     

偶氮四唑叠氮基甲脒AFZT高压物性的第一性原理计算

偶氮四唑叠氮基甲脒AFZT的爆轰性能表现优异,在高能炸药领域中具有广阔的应用前景.本文采用基于密度泛函理论的第一性原理方法计算了AFZT在0～50 GPa压力下的晶体结构、电子性质以及氢键相互作用,并分析了这些性质在压力下的变化规律.在压力的作用下,AFZT晶体在5 GPa下发生了结构转变并伴随着电子结构中带隙值的突变,其带隙先减小后增大再减小,总态密度的峰值随着压力的增加而减小.结构中叠氮甲脒阳离子上的N8-N9与N9-N10键在压力下表现得最稳定,N-H^…N类型的氢键在所有相互作用中占据主导地位.此外,AFZT结构沿不同晶轴压缩的难易程度与此方向上氢键相互作用分布的疏密有关,并且其氢键主要沿xz平面分布而在y轴上分布极少,这导致了它沿y轴方向最易被压缩.     

同轴虚阴极振荡器实验研究

介绍了中国工程物理研究院应用电子学研究所关于同轴虚阴极振荡器实验的最新进展。实验结果表明,带阳极反射板结构的同轴虚阴极振荡器比不带阳极反射板结构的同轴虚阴极振荡器输出微波功率更高,频谱更纯。在二极管电压350 kV,电流23 kA条件下,输出微波峰值功率500 MW,能量转换效率约6.2%,工作频率为3.3 GHz。对实验结果进行了理论分析。     

基于Z箍缩装置的实验室天体物理研究

大型高功率脉冲装置广泛应用于高能量密度物理的实验室中,随着诊断技术和流体力学模拟技术水平的提高,基于此类装置,实验室天体物理方向取得一些新的重要进展,文章主要介绍帝国理工大学Z箍缩结构的MAGPIE 脉冲功率装置上开展的关于磁重联和喷流的实验进展,在磁重联实验中,发现重联电流片中电子温度和离子温度远高于入流等离子体的温度,必然有其他效应导致电子和离子的异常高温;喷流实验中观察到弓形激波和锥形激波的产生。最后对Z 箍缩装置实验室天体物理学的未来发展做一些展望。     

强激光加载下高压液氘材料的电导率

液氘在高压下有丰富的电学光学性质。利用反射率和相对介电函数关系并从广义极化角度出发初步建立了计算低Z材料电导率的简易模型;在神光-Ⅱ装置上利用第九路激光冲击加载液氘材料并测量了其在强激光冲击下的高压状态参数和反射率。结合上述理论模型和实验,研究了高压下液氘的电离度和电导率。结果表明,液氘在约70 GPa时的电导率约为2.87105 (Wm)-1,已呈现出较为明显的金属电导特性。显然,冲击加载下液氘从绝缘分子态开始电离并向金属氘转变发生在更低的压强。     

低场磁共振系统的低噪声前置放大器研究设计

噪声前置放大器是磁共振射频接收子系统中的重要组件,它的性能优劣直接决定了最终磁共振图像的好坏.目前市场上的低噪声前置放大器大多基于中高场磁共振系统开发,而针对低场磁共振系统的很少;另外,商用低场磁共振系统的低噪声前置放大器价格相对较贵,并且多采用两级放大结构,结构复杂、调试难度大、成本相对较高.在此背景下,针对0.5 T低场磁共振设备利用Keysight公司的先进设计系统（ADS）软件对低噪声前置放大器进行研究设计,采用一级放大结构,探索电路设计与布局对放大器性能的影响.实测结果表明自主设计的低噪声前置放大器在21 MHz共振频率附近噪声系数为0.5 dB左右,增益达到了30 dB,能够满足低场磁共振应用的要求.     

250 kV，1 MHz重复率方波三脉冲源

阐述了一种新的实现高功率高重复率方波脉冲源的技术途径,利用高压快恢复整流硅堆把三个独立的方波脉冲合成为一个MHz重复率的方波三脉冲。通过合理的串并联设计,可以提高硅堆在高频脉冲下的反向耐压,并使硅堆通过的正向脉冲电流达到kA量级。方波三脉冲源输出指标达到了电压250 kV,脉冲电流10 kA,峰值功率2.5 GW,重复率1 MHz,脉冲上升时间约40 ns,脉冲平顶宽度50 ns。     

一种新型的单色高亮度LED物屏

本介绍一种新型的单色LED物屏。该物屏具有成像清晰、造价低廉、制作方便的特点。     

Transverse Wave Propagation in Relativistic Two-Fluid Plasmas around Reissner–Nordström Black Hole

We investigate transverse electromagnetic waves propagating in a plasma influenced by the gravitational field of the Reissner–Nordström black hole. Applying 3+1 spacetime split we reformulate the relativistic two-fluid equations to take account of gravitational effects due to the event horizon and describe the set of simultaneous linear equations for the perturbations. Using a local approximation we investigate the one-dimensional radial propagation of Alfvén and high frequency electromagnetic waves. We derive the dispersion relation for these waves and solve it for the wave number k numerically.     

Reversible Flat to Rippling Phase Transition in Fe Containing Layered Battery Electrode Materials

Layered sodium transition metal oxides of NaTMO₂ (TM = 3d transition metal) show unique capability to mix different compositions of Fe to the TM layer, a phenomenon that does not exist in LiTMO₂. Here, a novel spontaneous TM layer rippling in the sodium ion battery cathode materials is reported, revealed by in situ X‐ray diffraction, Cs‐corrected scanning transmission electron microscopy, and density functional theory simulation, where the softening and distortion of FeO₆ octahedra collectively drives the flat TM planes into rippled ones with inhomogeneous interlayer distance at high voltage. In such a rippling phase, charge and discharge of Na ions take different evolution pathways, resulting in an unusual hysteresis voltage loop. Importantly, upon discharge beyond a certain Na composition, the rippling TM layer will go back to flat, giving the reversibility of such structural evolution in the following cycles.