GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

水溶性防氧化剂在SMT用印制板上的应用

水溶性的防氧化剂是一种有机可焊性保护剂。其方法是在印制板完全阻焊、字符层的印刷，并经电检之后，通过表面浸渍在裸铜的贴片位或通孔内形成一种耐热性的有机可焊性膜层。这种有机、可焊、耐热的膜层，膜厚可达0.3-0.5mm，其分解的温度可达约300℃，传统的印制板的热风整平法亦无法满足QFP愈来愈密集的需求，同时也无法满足SMD表面平整度的要求，更无法适应PCB薄型化生产。烷基苯并咪唑的OSP法能弥补这项缺陷，因而在PCB业乃至SMT产业中得到了广泛的应用。     

Bandwidth Adaptation Algorithms for Adaptive Multimedia Services in Mobile Cellular Networks

The fluctuation of available link bandwidth in mobilecellular networks motivates the study of adaptive multimediaservices, where the bandwidth of an ongoing multimedia call can bedynamically adjusted. We analyze the diverse objectives of theadaptive multimedia framework and propose two bandwidth adaptationalgorithms (BAAs) that can satisfy these objectives. The firstalgorithm, BAA-RA, takes into consideration revenue and``anti-adaptation' where anti-adaptation means that a user feelsuncomfortable whenever the bandwidth of the user's call ischanged. This algorithm achieves near-optimal total revenue withmuch less complexity compared to an optimal BAA. The secondalgorithm, BAA-RF, considers revenue and fairness, and aims at themaximum revenue generation while satisfying the fairnessconstraint defined herein. Comprehensive simulation experimentsshow that the difference of the total revenue of BAA-RA and thatof an optimal BAA is negligible. Also, numerical results revealthat there is a conflicting relationship between anti-adaptationand fairness.     

环境影响及计算机设备可靠性

和所有设备一样，计算机设备也是在一定环境中工作的，各种环境因素无时不对设备产生影响。要使计算机设备在各种环境中保持良好的性能，必须了解各种环境对计算机设备影响的机理和过程，分析在环境因素中那些因素是影响计算机设备的主要因素及其力度、频率、周期等，以便采取措施保护计算机设备正常工作。简要介绍除温度外，各种环境因素对计算机设备的影响。     

Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

分布式光纤喇曼放大技术及其在WDM系统中的应用

介绍了分布式光纤喇曼放大技术的原理、特点和应用 ,并从受此影响的 WDM传输系统的信噪比、噪声指数和品质因数三个方面讨论了光纤喇曼放大技术在提升光纤通信系统性能方面的重要作用。     

图有分数因子的度条件

本文研究了图有分数因子的度条件,得到了下面的结果：令k(?)1是一个整数,G是一个连通的n阶图,n(?)4k-3且最小度δ(G)(?)k,若对于每一对不相邻的顶点u,v∈V(G)都有max{d_G(u),d_G(v)}(?)n/2,则G有分数k-因子．并指出该结果在一定意义上是最好可能的。     

Au-Au2S复合纳米球壳微粒的空腔谐振及参量讨论

Au-Au2S复合纳米球壳微粒（金纳米球壳），是一种新型复合结构的纳米微粒，其结构为纳米级的Au2S介质球外包裹了一层几个纳米厚的黄金球壳。这种复合纳米球壳微粒可以被抽象为球型谐振腔。报道了它的空腔谐振吸收的实验结果，并且运用经典理论结合介观结构特征，讨论了有关Au-Au2S复合纳米球壳微粒空腔谐振吸收的一些重要参量，其中包括谐振吸收波长、品质因数、谐振能量等。另外，还讨论了金球壳的厚度对这些重要参量的影响。     

非傍轴平顶高斯光束M2因子两种定义的比较研究

基于功率密度的二阶矩方法,推导出了非傍轴平顶高斯(FG)光束束宽和远场发散角的解析表达式·研究表明,当w0/λ→0时,远场发散角趋于渐近值θmax=63.435°,与阶数无关·使用非傍轴高斯光束代替傍轴高斯光束作为理想光束,研究了非傍轴FG光束的M2因子,并与传统定义的M2因子作了比较·在非傍轴范畴,非傍轴FG光束的M2因子不仅与阶数N有关,而且与w0/λ有关·按照定义,当w0/λ→0时,非傍轴FG光束的M2因子不等于0,对阶数N=1,2,3时,M2因子分别趋于0.913,0.882和0.886·当N→∞时,M2因子取最小值M2min=0.816·     

用自适应脉冲微扰引导混沌系统到周期解

用自适应脉冲微扰方法控制的系统的某个系统变量作为驱动,设计了一种自适应控制器方法对两个或多个响应混沌系统进行脉冲微扰,引导这些系统从混沌运动到低周期运动,实现同时控制多个混沌系统到不同的周期态. 当选择相同的自适应控制器输入变量实施脉冲微扰时,还可控制两个或多个混沌系统达到不同的周期态同步. 通过对R?ssler混沌系统的仿真研究证实了方法的有效性. 关键词： 混沌控制 系统参量 自适应控制器 脉冲微扰 周期态同步