群时延精确设计的全差分四阶Bessel滤波器

采用MOS管有源电阻,提出了一种全差分R-MOSFET-C四阶Bessel有源低通滤波器,.通过调节工作于亚阈值区的CMOS管的沟道导纳补偿电阻值的大小,能抵消集成电路制造工艺中电阻值的一致偏差,实现Bessel有源滤波器群时延的精确设计.根据无源滤波器的状态方程完成有源滤波器的综合,应用3.3V,0.5μm CMOS工艺完成了群时延大小为0.75μs的四阶Bessel低通滤波器的管极计算机仿真,仿真结果表明所提电路正确有效,适于全集成.     

几种航空有源电子干扰装备的比较

本文对远距离支援干扰飞机、随队支援干扰飞机、机载自卫电子对抗系统以及最近国外正在大力发展的分布式电子干扰系统等几种航空有源电子干扰装备的作战对象、战术应用、功能、使用局限性等特点进行了比较 ,探讨了综合发展和运用这几型装备的重要意义     

PD雷达欺骗干扰方法浅析

概要介绍了PD雷达的抗干扰性能及其特点．并主要对PD雷达的欺骗干扰方法进行了一定的讨论。     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

高电容比射频/微波MEMS膜开关的理论分析和数值模拟

建立了一个MEMS膜开关电容比理论模型，由于这个模型比较全面地考虑了开关阈值电压、维持电压、偏置电压和介质膜内的电场强度等因素对电容比的影响，因而能较为正确地反映开关的电容特性。用数值方法计算了影响开关电容比的因素，并对计算结果进行了分析和讨论。提出了使用脉冲电压作为偏置电压可以使介质膜gj的厚度减少到50nm，从而使开关的电容比增加到3800。最后，讨论了实现高电容比MEMS膜开关的可行性。     

开关结构对a-SiTFT-LCD光学特性的影响

分析非晶硅薄膜晶体管在a-SiTFT-LCD中的开关特性，讨论这种开关结构中的主要功能膜材料尺寸与性能参量、光刻制备工艺，存储电容以及栅脉冲延迟效应等对a-SiTFT-LCD的通断电流比，信号响应与保持特性，图像亮度与对比度等光学特性的影响。     

核酸识体的研究及应用

核酸识体(aptamer)是近年来发展起来的一类经体外人工进化程序筛选出的寡聚核苷酸。它能高效、特异地结合各种配体，在蛋白质的分析检测、医学诊断治疗、生物传感器和分子开关的开发等方面有很大的应用前景，文章对核酸识体的研究和应用进展进行了综述。     

Cu-MgF2复合纳米金属陶瓷薄膜的电导特性研究

用射频磁控共溅射法制备了Cu体积分数分别为 10 % ,15 % ,2 0 %和 3 0 %的Cu MgF2 复合金属陶瓷薄膜 .用x射线衍射、x射线光电子能谱和变温四引线技术对薄膜的微结构、组分及电导特性进行了测试分析 .微结构分析表明 :制备的Cu MgF2 复合薄膜由fcc Cu晶态纳米微粒镶嵌于主要为非晶态的MgF2 陶瓷基体中构成 ,Cu晶粒的平均晶粒尺寸随组分增加从 11 9nm增至 17 8nm .5 0— 3 0 0K温度范围内的电导测试结果表明 :当Cu体积分数qM 由 15 %增加到 2 0 %时 ,Cu MgF2 复合薄膜的电阻减小了 8个量级 ,得出制备的复合薄膜渗透阈qCM 应处于 15 %和 2 0 %之间 .qM 在 10 %和 15 %之间的薄膜呈介质导电状态 ,而在 2 0 %和 3 0 %之间的薄膜则呈金属导电状态 .从理论上讨论了复合薄膜中杂质电导和本征电导的激活能及其对电导的贡献 ,并讨论了Cu MgF2 复合纳米金属陶瓷薄膜的渗透阈 ,得到了和实验一致的结果     

开关型霍尔传感器的原理与工程实现

介绍了开关型霍尔传感器的工作原理，设计了适用于工程测量的具体线路，并分析了该线路的特点。     

Study of solar features causing GMSs with 250γ<<Emphasis Type="Italic">H</Emphasis><400γ

The effect of solar features on geospheric conditions leading to geomagnetic storms (GMSs) with planetary index,A ^P ≥ 20 and the range of horizontal component of the Earth’s magnetic fieldH such that 250γ <H < 400γ has been investigated using interplanetary magnetic field (IMF), solar wind plasma (SWP) and solar geophysical data (SGD) during the period 1978–99. Statistically, it is observed that maximum number of GMSs have occurred during the maximum solar activity years of 21st and 22nd solar cycles. A peculiar result has been observed during the years 1982, 1994 when sunspot numbers (SSNs) decrease very rapidly while numbers of GMSs increase. No distinct association between yearly occurrence of disturbed days and SSNs is observed. Maximum number of disturbed days have occurred during spring and rainy seasons showing a seasonal variation of disturbed days. No significant correlation between magnitude (intensity) of GMSs and importance ofH _α , X-ray solar flares has been observed. Maximum number of GMSs is associated with solar flares of lower importance, i.e., SF during the period 1978-93.H _α , X-ray solar flares occurred within lower helio-latitudes, i.e., (0–30)°N to (0–30)°S are associated with GMSs. NoH _α , X-ray solar flares have occurred beyond 40°N or 40°S in association with GMSs. In helio-latitude range (10–40)°N to (10–40)°S, the 89.5% concentration of active prominences and disappearing filaments (APDFs) are associated with GMSs. Maximum number of GMSs are associated with solar flares. Coronal mass ejections (CMEs) are related with eruptive prominences, solar flares, type IV radio burst and they occur at low helio-latitude. It is observed that CMEs related GMS events are not always associated with high speed solar wind streams (HSSWSs). In many individual events, the travel time between the explosion on the Sun and maximum activity lies between 58 and 118 h causing GMSs at the Earth.