Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

自成像列阵共振腔的分析——Ⅰ.Talbot共振腔

利用自成像效应进行半导体列阵激光器锁相是一种重要的外腔锁相技术,所构成的共振腔可分为Talbot腔和带相位补偿板的Lau腔。我们用Fox-Li方法计算了共振模式。本文给出了Talbot腔的计算结果和分析,表明同相和反相模的损耗随腔长变化存在临界点。     

基于宽带毫米波工作体制的雷达目标识别方法探讨

对基于宽带毫米波工作体制的雷达目标特征获取和识别方法进行了综合分析和探讨.表明:在毫米波照射下,雷达目标可模型化为由多个散射中心组成的扩展目标;只要发射信号有足够的带宽,就可以从回波信号中获得各散射中心的空间分布、类型等特征;仿真结果说明,这种方法对高频区复杂目标的识别是有效的.     

运用模式分类的雷达抗转发式距离欺骗干扰方法

针对雷达转发式欺骗干扰中的距离欺骗，提出了一种基于模式分类来识别目标与干扰的方法。该方法基于干扰和目标能量和起伏特性差异确定提取特征因子，再利用RBF神经网络方法进行分类。仿真结果表明，该方法具有较好的抗距离欺骗干扰性能。     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.     

Study of solar features causing GMSs with 250γ<<Emphasis Type="Italic">H</Emphasis><400γ

The effect of solar features on geospheric conditions leading to geomagnetic storms (GMSs) with planetary index,A ^P ≥ 20 and the range of horizontal component of the Earth’s magnetic fieldH such that 250γ <H < 400γ has been investigated using interplanetary magnetic field (IMF), solar wind plasma (SWP) and solar geophysical data (SGD) during the period 1978–99. Statistically, it is observed that maximum number of GMSs have occurred during the maximum solar activity years of 21st and 22nd solar cycles. A peculiar result has been observed during the years 1982, 1994 when sunspot numbers (SSNs) decrease very rapidly while numbers of GMSs increase. No distinct association between yearly occurrence of disturbed days and SSNs is observed. Maximum number of disturbed days have occurred during spring and rainy seasons showing a seasonal variation of disturbed days. No significant correlation between magnitude (intensity) of GMSs and importance ofH _α , X-ray solar flares has been observed. Maximum number of GMSs is associated with solar flares of lower importance, i.e., SF during the period 1978-93.H _α , X-ray solar flares occurred within lower helio-latitudes, i.e., (0–30)°N to (0–30)°S are associated with GMSs. NoH _α , X-ray solar flares have occurred beyond 40°N or 40°S in association with GMSs. In helio-latitude range (10–40)°N to (10–40)°S, the 89.5% concentration of active prominences and disappearing filaments (APDFs) are associated with GMSs. Maximum number of GMSs are associated with solar flares. Coronal mass ejections (CMEs) are related with eruptive prominences, solar flares, type IV radio burst and they occur at low helio-latitude. It is observed that CMEs related GMS events are not always associated with high speed solar wind streams (HSSWSs). In many individual events, the travel time between the explosion on the Sun and maximum activity lies between 58 and 118 h causing GMSs at the Earth.     

Security Applications of Optical Face Recognition System: Access Control in E-Learning

The educational system has gradually shifted from a face-to-face to an e-learning system, which has become prevalent in advanced countries with the advance of information technology, and connection of global networks. Accordingly, a growing demand is emerging for more reliable individual certification with technical precision in order to measure and record learning achievements and credentials of participants. The present system has a limit in terms of registration capacity, therefore, its accuracy has often been questioned. Against this background, an individual certification system is proposed particularly for access control in e-learning. Under our proposed system, a compact optical correlator for facial recognition is employed. This correlator was previously tested for of biometrics authentication accuracy and proved highly reliable, having recorded remarkably low error rates (below 1%). The recorded error rate is sufficiently robust that the system itself can be regarded as a valid and practical viable attestation system.     

冗余磁盘阵列的故障容错分析

本文在介绍冗余磁盘阵列(RAID)的故障容错机理之后,着重研究了设备故障对RAID系统可靠性的影响.其平均持续正常工作时间和系统在线修复设备故障容许的平均间隔时间的计算结果表明,只要在一定的容许时间内替换或修复故障磁盘,系统可保持持续正常工作状态.     

射频激励扩散型冷却阵列波导CO2激光器技术

本文介绍了目前国内外研究者们提出的各种射频激励相干阵列波导ＣＯ２激光器技术，讨论了射频激励相干阵列波导ＣＯ２激光器技术的一个研究方向。     

超声跟踪法制作误差对器件性能的影响及补偿

研究发现快模入射超声跟踪氧化碲器件的布喇格损耗频响对于参数误差十分敏感,因而制作误差可能对器件性能有较大影响。本文系统研究了这种影响及其补偿方法,结果表明,当相邻两换能片之间中心距S有5%的误差和声偏置角丫_0有10%的误差时,通过调整入射角θ_1可作出完全的补偿。