垂直旋转流场中单颗粒运动状态判别及受力分析

为研究单颗粒在旋转流场中的运动状态及受力情况,以毫米级球形颗粒为例,利用旋转流场颗粒运动装置,通过使用摄像机记录颗粒在流场中的运动轨迹以获取其运动参数,分析了不同转速和颗粒直径条件下颗粒的运动轨迹,拟合得到了颗粒运动状态判别公式以及颗粒运动轨迹公式,分析了颗粒在旋转流场中的受力情况。结果表明,颗粒在旋转流场平衡状态下运动状态主要分为两类,一类是未离开壁面保持静止,另一类是离开壁面保持稳定周向运动;颗粒进行周向运动的轨迹为椭圆形,并且圆心随着转速的增大靠近旋转中心,而随着粒径的增大靠近壁面;颗粒在旋转流场的运动过程中主要受到离心力和旋转科式力作用。     

Computer Simulation Study on Adsorption and Conformation of Polymer Chains Driven by External Force

In this work, Monte Carlo simulations are used to study the critical adsorption behaviors of flexible polymer chains under the action of an external driving force F parallel to an attractive flat surface. The critical adsorption temperature T_c decreases linearly with increasing F,indicating that the driving force suppresses the adsorption of polymer. The conformation of polymer is also affected by the driving force.However, the effect of F is dependent on the competition between the driving force and temperature. Under strong force or at low temperature,the polymer is stretched along the direction of the force, while under weak force or at high temperature, the polymer is not stretched. When the force is comparable to the temperature, the polymer may be stretched perpendicular to the driving force, and below T_c, we observe conformational transitions from parallel to perpendicular and again to parallel by decreasing the temperature. We found that the perpendicular stretched conformation leads the polymer chain to synchronously move along the direction of the driving force. Moreover, the conformational transitions are attributed to the competition and cooperation between the driving force and the temperature.     

Scanning force microscopy and amplitude versus distance measurements on single‐crystal oxide surfaces

Dynamic mode imaging and investigations on amplitude versus distance measurements were carried out on surfaces of single‐crystal; SrTiO₃, Al₂O₃ and LaAlO₃. Experiments were performed to optimize the imaging parameters for surfaces having varying elastic properties. The dependence of the amplitude–distance curve on different materials and the amplitude of oscillation was investigated. For SrTiO₃, a low‐drive amplitude provided the linear region necessary for imaging. A large amplitude of oscillation, however, created dips in the amplitude–distance curves, presumably due to complications in the tip dynamics such as bifurcation, period doubling, etc. In the case of Al₂O₃ and LaAlO₃, amplitude–distance curves were characterized by oscillations for lower tip sample separations and step‐like discontinuities in the stiff region. The magnitude of the oscillations and discontinuities was found to decrease with amplitude and eventually could be eliminated. Thus, for these samples a large amplitude of the cantilever provided the linear region required for imaging. It was observed also that two different surfaces of Al₂O₃ (c‐cut and r‐cut) yield totally different amplitude–distance curves consistent with their standard differences. The results indicate the complex behaviour of amplitude–distance curves, which not only vary from one sample to another but from one surface to another for a given sample. Copyright © 2004 John Wiley & Sons, Ltd.     

Metal-to-Oxide Charge Transfer Observed by a Kelvin Probe Force Microscope

The charge transfer from a nanometer-sized transition metal particle to a catalyst support is thought to affect reactions over the metal surface. We propose the application of Kelvin probe force microscope, which is an extension of the atomic force microscope, to observe the charge transfer particle-by-particle. Our recent results on Na adatoms, Cl adatoms, Pt adatoms and particles, and Ni particles evaporated on TiO₂(110) are reviewed.     

聚乙二醇类表面活性剂对硅表面无电沉积Ag膜光滑作用研究

应用原子力显微镜技术及开路电位～时间谱技术,研究了非离子表面活性剂聚乙二醇2000,6000,20000对硅(100)表面无电沉积银膜的光滑作用.实验表明硅(100)表面无电沉积银的光滑程度以及镀层的质量均随聚乙二醇聚合度的增加而变好.     

DKDP晶体的柱面形貌与缺陷分析

采用原子力显微镜观测全方位生长的DKDP晶体的{100}面形貌,发现有螺旋位错,由此推断DKDP晶体{100}面以螺旋位错机制生长;利用同步辐射X射线白光形貌术观测了DKDP晶体缺陷,探讨了不同生长条件及生长阶段对晶体完整性的影响.     

刃型位错和圆弧形刚性线夹杂的干涉效应

位错和夹杂的干涉效应对于理解材料的强化和韧化机理具有十分重要的意义。文中研究了晶体材料中刃型位错和多条共圆弧刚性线夹杂的干涉作用。利用Riemann—Schwarz反照原理和复势函数的奇性主部分析技术，得到了问题的一般解答；对于只含一条刚性线夹杂的情况，给出了复势函数的封闭形式解。由Peach-Koehler公式求出了作用在刃型位错上的位错力，并讨论了圆弧形刚性线夹杂对位错力的影响规律，发现弧形刚性线对刃型位错有很强的排斥作用。本文解答不但可作为格林函数获得任意分布位错的相应解答，而且可以用于研究刚性线夹杂和任意形状裂纹的干涉效应问题。     

Periodic synchronization in a system of coupled phase oscillators with attractive and repulsive interactions

In this study we investigate the collective behavior of the generalized Kuramoto model with an external pinning force in which oscillators with positive and negative coupling strengths are conformists and contrarians, respectively. We focus on a situation in which the natural frequencies of the oscillators follow a uniform probability density. By numerically simulating the model, it is shown that the model supports multistable synchronized states such as a traveling wave state, π state and periodic synchronous state: an oscillating π state. The oscillating π state may be characterized by the phase distribution oscillating in a confined region and the phase difference between conformists and contrarians oscillating around π periodically. In addition, we present the parameter space of the oscillating π state and traveling wave state of the model.     

Proton radiation tolerance of nanocrystal memories

We report on proton radiation tolerance of Si-nanocrystal (Si-NCs) MOS structures aiming at non-volatile memory applications. Si-NCs were formed by low-energy (1 keV) ion-beam-synthesis within a 9 nm thick SiO₂ layer. A 2-D layer of Si-NCs with 3 nm mean diameter and 10¹² cm⁻² surface density was successfully achieved. After fabrication of Al capacitors, samples with and without Si-NCs were 1.5 and 6.5 MeV proton were irradiated at doses ranging from 1 Mrad (SiO₂) to 120 Mrad (SiO₂). Significant irradiation-dose-dependent shifts are detected in the C–V curves of the NC-MOS cells and programmed cells are found to undergo bit flip. Despite the above, the attainable memory windows after write/erase operations remain unchanged. Retention time characteristics at room temperature for the write and erase states of irradiated and non-irradiated samples reveal that even after an irradiation dose as high as 120 Mrad (SiO₂) the devices still exhibit long time charge storage behavior. We observe that the erase state flat-band voltage decay rate does not depend on the irradiation-dose while the opposite happens for the write state flat-band voltage decay rate which is found to be directly dependent on D_it values giving insight to the physics of the discharging mechanisms.