High-Efficiency ZnCdSe/ZnSSe/ZnMgSSe Green Light-Emitting Diodes

Green light-emitting diodes (LEDs) were fabricated employing a ZnCdSe/ZnSSe triple quantum-well (TQW) active region surrounded by ZnMgSSe cladding layers grown on an n-type (100) GaAs substrate by molecular beam epitaxy (MBE). A 3.5 mW pure green emission was observed for the surface-emitting LED device at a peak wavelength of 513.3 nm (2.415 eV) with a spectral half-width of 11.7 nm (55 meV) under a 20 mA (4.6 V) direct current at room temperature (25°C). These correspond to an external quantum efficiency of 7.2%, a power conversion efficiency of 3.8%, a luminous current efficiency of 66 lm/A, and a luminous efficiency of 14 lm/W.     

Elimination of surface site blockage due to ethyl species in MOMBE of ZnSe

The metalorganic molecular beam epitaxial growth of ZnSe using diethylzinc and/or diethylselenium gas sources results in an abnormally low growth rate of several hundred angstroms per hour. Experiments with dimethylzinc or elemental zinc with elemental selenium confirm that adsorbed ethyl-based radicals contribute to the low growth rate. Surface sites for incorporation of the metal atom are saturated by the chemisorbed ethyl radicals or by an ethyl molecule that is postulated to cause the growth rate limitation. It is observed that laser and electron beam irradiation overcome the site blockage phenomenon under appropriate growth conditions. For beam-assisted growth, significant increases over the unilluminated growth rate are measured. Experiments designed to investigate the wavelength dependence of the photon-enhanced growth rate provide evidence that photo-generated electron/hole pairs are necessary to assist in releasing the ethyl radical from the unpyrolyzed DEZn molecule that is adsorbed to the surface.     

Effect of GaAs surface pretreatment on electrical properties of MBE-ZnSe/GaAs substrate interfaces

Interface properties of MBE-grown ZnSe/GaAs substrate systems formed on variously pretreated GaAs surfaces, which include standard chemically etched (5H₂SO₄:1H₂O₂: 1H₂O), (NH₄)₂S_x-, NH₄I-, and HF-pretreated surfaces, are investigated by capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements. A HF-pretreated and annealed ZnSe/p-GaAs sample showed marked reduction of interface state density, N_ss, with N_ss,_min below 4 x 10¹¹cm^-2 eV^-1 near E_c- E_FS= 1.0 eV. The value is about one order of magnitude smaller than that of the standard chemically etched interface, and comparable to (NH₄)₂S_x- pretreated interface. Nevertheless, C-V characteristics of ZnSe/nGaAs samples, which were measured for the first time, indicate that interface Fermi level, E_FS, is not completely unpinned due to the interface states located above the midgap. A consistent result was obtained by DLTS method in determining E_FS position. The influence of N_ss distribution on vertical current conduction is also analyzed. It is found that U-shaped interface states with N_ss(E) > 1 x 10¹³ cm^-2 eV^-1 above the midgap may cause an excess voltage drop larger than a few volts at the interface.     

［（Cdse）_m（ZnSe）_n］_p－Znse多量子阱中的多声子散射

对用原子层外延方法，在［００１］晶向ＧａＡｓ衬底上生长的［（Ｃｄｓｅ）ｍ（Ｚｎｓｅ）ｎ］ｐ－ＺｎＳｅ应变量子阱结构，在１０～３００Ｋ温度范围内测量了喇曼散射光谱，观察到两种类ＺｎＳｅＬＯ声子限制模．利用改变样品温度和入射光能量实现了共振喇曼散射，观察到高达７阶的类ＺｎＳｅＬＯ声子模．并讨论了多声子喇曼散射和热萤光过程的区别．     

Ohmic Contacts to ZnSe-Based Materials

The formation of ohmic contacts to n- and p-type ZnSe is reviewed. The mechanisms for forming reasonable low-resistance ohmic contacts to n-ZnSe are well understood. This results from the fact that the Fermi energy level of ZnSe is unpinned and metals with sufficiently large work functions can make contact to n-type material. However, the situation is reversed for p-ZnSe where a large band gap and large electron affinity make it impossible to find metals with sufficiently large work functions to create an ohmic contact. Instead, the use of HgSe to form low barrier height Schottky contacts and of ZnSe/ZnTe multiple quantum wells (MQWs) to form ohmic contacts is reviewed. Although the MQWs can be used to form ohmic contacts to p-ZnSe, they degrade at high temperatures and high current densities. This is reviewed and shown to be a serious problem for applications to laser diodes.     

ZnSe相变、电子结构的第一性原理计算

基于第一性原理平面波赝势(PWP)和广义梯度近似(GGA)方法,对闪锌矿结构(ZB)和岩盐结构(RS)的ZnSe在0—20GPa高压下的几何结构、态密度、能带结构进行了计算研究,分析了闪锌矿结构ZnSe和岩盐结构ZnSe的几何结构.在此基础上,研究了ZnSe的结构相变、弹性常数、成键情况以及相变压强下电子结构的变化机理.结果发现:通过焓相等原理得到的ZB相到RS相的相变压强为15.3GPa,而由弹性常数判据得到的相变压强为11.52GPa,但在9.5GPa左右并没有发现简单立方相的出现;在结构相变过程中,sp3轨道杂化现象并未消除,Zn原子的4s电子在RS相ZnSe的导电性中起主要贡献.     

Monocrystalline Cd0.2Zn0.8Te solid solution obtained by self‐selecting vapour growth

Cd_0.2Zn_0.8Te monocrystals with the sizes of about 15 mm have been produced by self‐selecting vapour growth (SSVG). High degree of structural perfection of monocrystalline Cd_0.2Zn_0.8Te was achieved. Excellent compositional uniformity was observed as well. To our knowledge, no comparable results are reported for this solid solution. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of type-II ZnO/ZnTe core-shell nanowire arrays for solar cell applications

Large area, well-aligned type-II ZnO/ZnTe core-shell nanowire arrays have been fabricated on an a-plane sapphire substrate. The ZnO nanowires were grown in a furnace by chemical vapor deposition with gold as catalyst and then were coated with a ZnTe shell on the ZnO nanowires surface by a metal-organic chemical deposition chamber. The morphology and size distribution of the ZnO/ZnTe core-shell nanowire arrays were studied by scanning electron microscopy (SEM) and the crystal structure was examined by x-ray diffraction (XRD). Transmission measurement was used to study the optical properties of the core-shell nanowires. The results indicated that the ZnO/ZnTe core-shell nanowire arrays have good crystalline quality. In addition, it was found that the nanowire arrays have good light absorption characteristics and these properties make it suitable for making photovoltaic devices.     

Photoluminescence quantum and surface states of excitons in ZnSe and CdS nanoclusters

The optical spectra of quantum dots (QDs) of CdS and ZnSe grown in borosilicate glass by the sol-gel method are obtained and analyzed. It is found that at concentrations of the two semiconductors x<0.06% the emission spectra are due to annihilation of free (internal) excitons in quantum states. The mean size of the quantum dots for a given concentration of ZnSe and CdS is calculated and found to be in good agreement with the X-ray data, and the exciton binding energy is calculated with allowance for the dielectric mismatch between the semiconductor and matrix. It is proposed that this mismatch may be the cause giving rise to the exciton percolation level that is observed in QD arrays for both systems at x>0.06%. The emission from the surface level of CdS QDs in the region ~2.7 eV, formed by the outer atoms with dangling bonds, is observed for the first time, as is the emission band from surface localized states. The relation between the position of the maximum of this band and the energy of the 1S state of the free exciton is established. It is shown that the properties of surface localized states are largely similar to the analogous properties of localized states of 3D (amorphous semiconductors, substitutional solid solutions of substitution) and 2D (quantum wells and superlattices) structures.     

Optical absorption of zinc selenide doped with cobalt (Zn1−xCoxSe) under hydrostatic pressure

Abstract

The optical absorption of the diluted magnetic semiconductor Zn_1?xCO_xSe (x = 0.02) has been measured at room temperature under hydrostatic pressure up to 14GPa in a membrane diamond-anvil cell. We found two absorption features: (i) an absorption structure in the energy range 1.6?1.8eV, with a negligible pressure shift (i.e., 0.45 ± 0.05 meV/GPa) which we have identified as the Co²⁺(3d⁷) internal transition ⁴A₂(F)→+⁴T₁(P) and (ii) an onset in the energy range 2?2.7eV which redshifts with pressure (?8.1±0.6meV/GPa). We have attributed such absorption edge to charge transfer between the ZnSe valence band and the Co²⁺(3d⁷) levels.