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31.
ZnSe宽带隙半导体光发射器件 总被引:1,自引:0,他引:1
ZnSe宽带隙半导体光发射器件是未来全色光显示和高密度光记录用的重要器件。在相继完成材料、掺杂技术,以及器件结构相关的研究工作后,目前正在攻克器件实用化的关键技术——寿命。介绍了ZnSe的p型和n型导电材料的控制技术及其LD和LED的开发进展。 相似文献
32.
This paper presents results of the photoacoustic (PA) spectral studies of a series of ZnSe crystals with differently prepared surfaces. All samples exhibited the surface absorption connected with defects states located on their surfaces. The quality of the surface preparation is expressed by the surface absorption coefficient spectra of the samples times the thickness of a damaged layer. In this paper both theoretical and experimental photoacoustic amplitude and phase spectra as also the corresponding computed surface and volume optical absorption coefficient spectra of the samples with differently prepared surfaces are presented and discussed. This is the first attempt of the quantitative evaluation of the surface quality of the samples from the photoacoustic experimental spectra. 相似文献
33.
B. Ittermann M. Füllgrabe M. Heemeier F. Kroll F. Mai K. Marbach P. Meier D. Peters G. Welker W. Geithner S. Kappertz S. Wilbert R. Neugart P. Lievens U. Georg M. Keim 《Hyperfine Interactions》2000,129(1-4):423-441
β-active probe nuclei are implanted in nominally undoped ZnSe crystals. β-radiation detected nuclear magnetic resonance (β-NMR)
studies are described for two different probe nuclei, 8Li and 12B. This way, the implantation behavior of two “opposite”dopants, one acceptor (Li) and one donor (B) can be characterized
by the same microscopic technique. Such characterizations are attempted in terms of the structure of intermediate or final
lattice sites, defect charge states, or the kinetics of defect reactions and site changes.
This revised version was published online in July 2006 with corrections to the Cover Date. 相似文献
34.
M. G. Syed Basheer Ahamed V. S. Nagarethinam A. R. Balu A. Thayumanavan K. R. Murali C. Sanjeeviraja M. Jayachandran 《Crystal Research and Technology》2010,45(4):421-426
ZnSe films were deposited on glass substrates keeping the substrate temperatures, at room temperature (RT), 75, 150 and 250 °C. The films have exhibited cubic structure oriented along the (111) direction. Both the crystallinity and the grain size increased with increasing deposition temperature. A very high value of absorption co‐efficient (104 cm‐1) is observed. The band gap values decrease from a value of 2.94 eV to 2.69 eV with increasing substrate temperature. The average refractive index value is in the range of 2.39 – 2.41 for the films deposited at different substrate temperatures. The conductivity values increases continuously with temperature. Laser Raman spectra showed peaks at 140.8 cm‐1, 246.7 cm‐1and 204.5 cm‐1which are attributable to 2TA LO phonon and TO phonon respectively. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
35.
The Zinc Selenide (ZnSe) thin films have been deposited on SnO2/glass substrates by a simple and inexpensive chemical bath deposition (CBD). The structural, optical and electrical properties of ZnSe films have been characterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), optical absorption spectroscopy, and four point probe techniques, respectively. The films have been subjected to different annealing temperature in Argon (Ar) atmosphere. An increase in annealing temperature does not cause a complete phase transformation whereas it affects the crystallite size, dislocation density and strain. The optical band gap (Eg) of the as-deposited film is estimated to be 3.08 eV and decreases with increasing annealing temperature down to 2.43 eV at 773 K. The as-deposited and annealed films show typical semiconducting behaviour, dρ/dT > 0. Interestingly, the films annealed at 373 K, 473 K, and 573 K show two distinct temperature dependent regions of electrical resistivity; exponential region at high temperature, linear region at low temperature. The temperature at which the transition takes place from exponential to linear region strongly depends on the annealing temperature. 相似文献
36.
Prof. Jujun Yuan Xiaofan Li Haixia Li Weidong Lai Yunfei Gan Prof. Jianwen Yang Prof. Xianke Zhang Prof. Jun Liu Prof. Xiurong Zhu Prof. Xiaokang Li 《Chemistry (Weinheim an der Bergstrasse, Germany)》2021,27(60):14989-14995
ZnSe has got extensive attention for high-performance LIBs anode due to its remarkable theoretical capacity and environmental friendliness. Nevertheless, the large volume variation for the ZnSe in the discharge/charge processes brings about rapid capacity fading and poor rate performance. Herein, ZnSe/C hollow polyhedrons are successfully synthesized by selenization of zeolitic imidazolate framework-8 (ZIF-8) with resorcinol-formaldehyde (RF) coating. The protection of C layer derived from RF coating layer and Ostwald ripening during the process of selenization play important roles in promoting formation of ZnSe/C hollow polyhedrons. The ZnSe/C hollow polyhedrons exhibit good rate performance and long-term cycle stability (345 mAh g−1 up to 1000 cycles at 1 A g−1) for lithium ion batteries (LIBs) anode. The improved electrochemical performance is benefit from the unique ZnSe/C hollow structure, in which the hollow structure can effectively avoid terrible volume expansion, and the thin ZnSe/C shell can not only provide adequate diffusion paths of lithium ions and but also enhance the electronic conductivity. 相似文献
37.
We report on the well-width dependence of the phase coherent photorefractive (PCP) effect in ZnSe/ZnMgSe single quantum wells (QWs) using 90 fs light pulses. The experiments are performed in a four-wave-mixing configuration at temperatures between 25 and 65 K. The ZnMgSe/ZnSe QWs with 10, 5 and 3 nm well width were grown on GaAs substrate using molecular beam epitaxy. With decreasing QW thickness we observe a reduction of the PCP diffraction efficiency. This is attributed to the higher electron energy in small QWs due to the quantum size effect, which leads to a reduced equilibrium density of captured electrons in the QW. With increasing temperature the PCP signal further decreases which is attributed to thermal activation of the QW electrons back to the GaAs substrate. 相似文献
38.
V. V. Gudkov A. T. Lonchakov A. V. Tkach I. V. Zhevstovskikh V. I. Sokolov N. B. Gruzdev 《Journal of Electronic Materials》2004,33(7):815-818
Ultrasonic experiments, done on ZnSe:Ni crystal with the dopant concentration 5.5×1019 cm−3, revealed precursor phenomenon in the form of lattice softening at temperatures significantly exceeding the temperature of
structural transition (Tc=14.5 K). It proved to be that the order parameter of the transition was associated with the shear deformation ε4. Investigation of thermal conductivity (κ) in the same temperature region pointed out that the Jahn-Teller (JT) effect could
be responsible for the anomalous behavior of κ(T) and lattice instability. 相似文献
39.
Growth of large-diameter ZnTe single crystals by liquid-encapsulated melt growth methods 总被引:1,自引:0,他引:1
The 80-mm-diameter ZnTe single crystals were successfully obtained by the liquid-encapsulated Kyropoulos (LEK) method. Both
〈100〉- and 〈110〉-oriented single crystals were reproducibly grown by using ZnTe seed crystals. Furthermore, 80-mm-diameter,
〈100〉 and 〈110〉 ZnTe single crystals were obtained by the pulling method. The etch pit densities (EPDs) of the grown crystals
by the LEK and pulling methods were lower than 10,000 cm−2. The strain in the grown crystals by the pulling method was lower than that of LEK crystals. 相似文献
40.
ZnSe heteroepitaxial layers have been grown on GaAs (100), (110) on axis, and (110) 6° miscut substrates by molecular beam
epitaxy. ZnSe on GaAs (110) shows smooth and featureless spectra from Rutherford backscattering channeling measurements taken
along major crystalline directions, whereas ZnSe on GaAs (100) without pre-growth treatments exhibit large interface disorder
in channeling spectra. ZnSe films grown on GaAs (110) on axis show facet formation over a wide range of growth conditions.
The use of (110) 6° miscut substrates is shown to suppress facet formation; and under the correct growth conditions, facet-free
surfaces are achieved. Etch pit density measurements give dislocation densities for ZnSe epitaxial layers grown on GaAs (100),
(110) on axis, and (110) 6° miscut substrates of 107/cm2, 3 × 105/cm2 and 5 × 104/cm2, respectively. These results suggest that with further improvements to ZnSe growth on GaAs (110)-off substrates it may be
possible to fabricate defect free ZnSe based laser devices. 相似文献