Cr2+:ZnSe的激光输出和调谐性能

Cr2 :ZnSe具有很宽的吸收带和发射带,是中红外波段优秀的可调谐激光材料.从吸收光谱、发射光谱以及角度调谐输出对Cr2 :ZnSe晶体的激光输出性能进行了研究.采用真空高温扩散法制备Cr2 :ZnSe晶体,获得了高浓度的Cr2 离子掺杂的厚1.7 mm,直径10 mm的薄片ZnSe晶体.使用中心波长2.05 μm,最大输出功率8 W的Tm离子掺杂的光纤激光器抽运,使用平凹腔结构搭建谐振腔,获得了最大平均功率1.034 W,中心波长2.367 μm,线宽10 nm的连续激光输出.利用角度调谐的方法,对Cr:ZnSe晶体的调谐性能进行了研究,在100 nm范围内获得了调谐输出.     

Effects of nickel on the crystallization of Zr70Cu20Ni10 amorphous alloy

Differential scanning calorimetry (DSC) and x-ray diffraction (XRD) are employed to investigate the effects of nickel on the crystallization of the amorphous Zr₇₀Cu₂₀Ni₁₀ alloy. We have found that the crystallization process of the amorphous Zr₇₀Cu₂₀Ni₁₀ alloy is strongly influenced by the addition of nickel. Addition of 10 at% Ni to the Zr₇₀Cu₃₀ amorphous alloy makes the crystallization process proceed from a single-stage mode to a double-stage mode. The activation energy for crystallization of the amorphous Zr₇₀Cu₂₀Ni₁₀ alloy is calculated to be about 388kJ·mol^-1 on the basis of the Kissinger equation. The effects of nickel on the crystallization of the amorphous Zr₇₀Cu₂₀Ni₁₀ alloy are discussed in terms of the genetics of metals.     

ZnO-Si不同退火条件对生长ZnSe薄膜的影响

研究了作为缓冲层的ZnO薄膜在不同的退火时间、退火温度下退火对Si衬底上生长ZnSe膜质量的影响。当溅射有ZnO膜的Si(111)衬底的退火条件变化时，从X射线衍射谱（XRD）和光致发光谱（PL）中可见，ZnSe(111)膜的晶体质量有较大的变化。变温的PL谱表明，Si衬底上生长的具有ZnO缓冲层的ZnSe膜的近带边发射峰起源于自由激子发射。     

反应离子刻蚀ZnTe的THz辐射和探测研究

运用电光采样技术揭示了反应离子刻蚀（RIE）ZnTe晶体表面THz辐射的光学整流产生机制， 观察到0.25 ps的THz场分布.通过比较刻蚀前后以及不同刻蚀条件下ZnTe样品在不同激发功 率下的THz辐射强度，发现由于反应离子刻蚀破坏了ZnTe样品表面的有序性，晶体的电光系 数随射频功率的增加而减小.借助于计算不同刻蚀条件下ZnTe晶体的频率响应函数，分析了 随射频功率增加ZnTe晶体响应频谱展宽的现象. 关键词： THz辐射 反应离子刻蚀 ZnTe     

基于硒化锌薄膜法的食源性致病菌原位红外光谱检测

食源性致病菌是引发和威胁公众健康的主要因素之一。由于食源性致病菌种类繁多,常规检测方法复杂耗时要求高,因此迫切需要一种更加快速精确的致病菌检测技术。在传统红外光谱检测致病菌的流程中,如经典的溴化钾压片法,除了压片本身的操作之外通常还需对样品进行冷冻干燥（约需2 d）等耗时前处理过程,因而不利于高通量快速检测。本研究利用硒化锌薄膜法,在硒化锌窗片上直接滴加菌液、低温（48 ℃）烘干后进行原位检测,无需漫长的冻干处理,整个检测过程在50 min之内。同时,检测所需样品量少（10 μL）无需研磨等物理破坏性的制样过程,避免了常规溴化钾压片法中研磨颗粒粗细、制片厚薄误差及易碎片、吸潮等的不利影响。四种常见食源性致病菌（大肠杆菌DH5α;沙门氏菌CMCC 50041;霍乱弧菌SH04;金黄色葡萄球菌SH10）的硒化锌薄膜法与溴化钾压片法红外谱图对比分析表明：在相同的峰值检测阈值下（透过率大于0.05%）,本研究所采用的方法获得的二阶导数图谱在900～1 500 cm-1范围内可被识别的特征峰个数比溴化钾压片法明显增多（硒化锌薄膜法共计81个,溴化钾压片法共计58个）,特征峰在多个位置强度显著增加(1 119,1 085和915 cm-1等),且可将溴化钾压片法中较宽的单峰或不明显的双峰显示为较明显的双峰（大肠杆菌DH5α：1 441,1 391和1 219 cm-1等; 沙门氏菌CMCC 50041：1 490,1 219和1 025 cm-1;霍乱弧菌SH04：1 441和1 219 cm-1;金黄色葡萄球菌SH10：1 491,1 397和1 219 cm-1）,说明硒化锌薄膜法可以提高图谱分辨率及信噪比。基于硒化锌薄膜法的原位红外光谱法对常见食源性致病菌整体快速高通量检测将具有巨大的应用前景。     

Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys

An epitaxial lift-off technique for removing wide bandgap II-VI heterostructures from GaAs substrates has previously been demonstrated using lattice-matched MgS as the sacrificial layer. However, using MgS as an etch release layer prevents its use as a wide bandgap barrier in the rest of the structure. Here, we describe the use of the etch-resistant alloy Zn_.2Mg_.8S_.64Se_.36 which we have developed as a replacement for MgS. We demonstrate that this alloy can be grown by MBE together with MgS in heterostructures and used as a barrier for ZnSe. A ZnSe quantum well with Zn_.2Mg_.8S_.64Se_.36 barriers shows no decrease in photoluminescence intensity after the etching process but shows a shift in emission wavelength associated with the changing strain state.     

Development and construction of rotating polarizer analyzer ellipsometer

A detailed mathematical derivation and an experimental characterization of one to two ratio rotating polarizer analyzer ellipsometer (RPAE) are presented. The alignment, calibration, and testing of reference samples are also discussed. The optical properties of some known materials obtained by the proposed ellipsometer will be shown and compared to accepted values. Moreover, the constructed ellipsometer will be tested using two ellipsometry standards with different thicknesses.     

Comparative study of spectroscopic properties of Er^3＋／Yb^3＋-codoped tellurite glass and fibres under 980nm excitation＊

A tellurite fibre of TeO_{2}－ZnO－La_{2}O_{3}－Li_{2}O glass codoped with 20000 ppm ytterbium and 5000 ppm erbium was fabricated by the suction casting and rod-in-tube technologies. The absorption spectrum of Er^{3+}/Yb^{3+} -codoped bulk glass has been measured. From the Judd－Ofelt intensity parameters, the spontaneous emission probability and radiative lifetime τ_{rad} of Er^{3+}:{}^{4}I_{13/2}→{}^{4}I_{15/2} transition for the bulk glass have been calculated. The emission fluorescence spectra and lifetimes around 1.5μm, and subsequent upconversion fluorescence in the range of 500－700nm were measured in fibres and compared with those in bulk glass. The changes in amplified spontaneous emission with fibre length and pumping power was also measured. It was found that the emission spectrum from erbium in fibres is almost twice as broad as the corresponding spectrum in bulk glass when pumped at 980nm.     

ZnSe/SiO2半导体量子点玻璃的光谱特性

对采用溶胶凝胶法制备的ZnSe/SiO2半导体量子点玻璃的光谱性质进行了测试分析.UV-Vis透射光谱中观察到光吸收边相对于体相半导体有明显蓝移.稳态发射光谱(PL)中观察到ZnSe纳米晶体的位于蓝区的基本呈高斯分布的弱的最低激子发射峰、强而宽的表面态发光带以及对应杂质能级的三个锐峰发光.时间分辨荧光光谱(TRPL)中观察到发光效率高的最低激子发射峰,并测量其荧光衰减寿命,经尾部拟合为28.5 ps.同时,结合有效质量近似(EMA)模型,估计ZnSe纳米晶体的平均粒径介于2.45~3.60 nm之间,尺寸分布基本呈高斯型.     

ZnTe（ZnTe：Cu）多晶薄膜的XPS研究

用共蒸发法在室温下制备了ZnTe及ZnTe：Cu多晶薄膜，测量了电导率温度曲线，发现不掺杂的ZnTe薄膜的暗电导随温度的增加而线形增加，呈常规的半导体材料特征；掺Cu的ZnTe薄膜在温度较低时，lnσ随温度升高而缓慢增加，随后缓慢降低，达到一极小值，当温度继续升高时又陡然增加，呈现异常现象。用XPS研究了N2气氛下退火前后表面状态，发现不掺Cu的ZnTe薄膜呈现富Te现象。掺Cu后Te氧化明显，以ZnTe形式存在的Te明显减少；ZnTe：Cu薄膜中Zn的含量在退火前后变化明显，退火前，Zn主要以ZnTe形式存在，退火后Zn原子向表面扩散，使表面成分更加均匀，谱峰变宽；退火时，部分Cu原子进入晶格形成CuxTe相，引起载流子浓度变化，导致ZnTe：Cu多晶薄膜的电导温度关系异常。