Successful growth of two different quantum dots on one substrate

We report the successful growth of ZnSe and ZnTe quantum dots (QDs) embedded in ZnS on GaAs substrate. These QDs have good optical properties and show quantum confinement effect. High-resolution electron scanning microscope studies show that these QDs are grown in Volmer–Weber mode. It is found that the size of the QDs is controlled by the growth duration. When the growth time is short, high density of QDs could be fabricated, but with a long growth time the small QDs get together to form a large cluster. We also show that with this growth method it is possible to grow both ZnSe quantum and ZnTe QDs on one substrate at the same time. For this dual QDs system, two peaks corresponding to the emission from the ZnSe dots (3.0 eV, blue–violet) and ZnTe dots (2.6 eV, green–blue) could be observed at the same time in the photoluminescence measurement.     

ZnTe晶体中光学整流产生的THz辐射及其电光探测研究

借助抽运-探测技术研究了ZnTe晶体中光学整流产生的太赫兹(THz)辐射，利用ZnTe晶体的线性电光效应探测THz辐射场分布，观察到了较窄(约为0.2 ps)的THz场分布及相应较宽(响应超过4 THz，半峰宽约为2.4 THz)的THz频谱，并运用琼斯矩阵对实验结果进行了理论拟合. 研究了飞秒激光脉冲波长(750—850 nm)、脉冲宽度(56—225 fs)和晶体旋转与THz辐射产生的关系. 同时改变探测光偏振方向进行偏振调制，并从理论上分析了偏振调制对THz辐射探测的影响. 关键词： THz辐射 光学整流 电光探测 ZnTe     

Heavy Cr doping of ZnSe by molecular beam epitaxy

Epitaxial ZnSe layers were grown by molecular beam epitaxy (MBE) to study Cr incorporation with the long-term goal of demonstrating an alternate route for achieving transition-metal-doped lasers. Concentrations between 10¹⁵ atoms cm⁻³ and 4×10²⁰ atoms cm⁻³ were achieved. Secondary ion-mass spectroscopy (SIMS) concentration profiles strongly suggest that surface segregation and accumulation of Cr occurs during growth. Photoluminescence (PL) measurements indicate Cr is incorporated in the optically active Cr²⁺ state up to levels of ∼10¹⁹ cm⁻³. Electron paramagnetic resonance (EPR) studies suggest that the Cr atoms exhibit collective magnetic behavior even at these levels. X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) indicate high structural quality is maintained for Cr incorporation for levels up to ∼10¹⁹ atoms cm⁻³.     

Structure and optical properties of ZnSeO alloys with O composition up to 6.4%

II–VI-O type alloy semiconductor ZnSeO (O composition up to 6.4%) is grown by molecular beam epitaxy. O composition increases with O₂ flow rate. Several XRD peaks are observed when O composition is 2–4%, indicating phase separation. Growth at low temperature results in higher O composition. Photoluminescence intensity of ZnSeO lattice matched to GaAs is much stronger than that of ZnSe and peak shifts to lower energies with increasing O composition. Photoreflectance spectroscopy is performed to investigate the band gap energy. The band gap energy investigated by photoreflectance decreases with increasing O composition due to large band gap bowing even when phase separation occurs. The bowing parameter is estimated as 8.4 eV.     

ZnSe制备技术研究进展

ZnSe是一种很有应用前景的半导体光电材料,得到了广泛的关注,制备高质量的ZnSe已成为光电 技术领域重要的研究课题之一.本文详细叙述了近年来ZnSe的各种制备技术的研究进展及其特点.     

Preparation and characterization of ZnTe thin films by SILAR method

Nanocrystalline zinc telluride (ZnTe) thin films were prepared by using successive ionic layer adsorption and reaction (SILAR) method from aqueous solutions of zinc sulfate and sodium telluride. The films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption measurement techniques. The synthesized ZnTe thin films were nanocrystalline with densely aggregated particles in nanometer scale and were free from the voids or cracks. The optical band gap energy of the film was found to be thickness dependent. The elemental chemical compositional stoichiometric analysis revealed good Zn:Te elemental ratio of 53:47.     

Molecular beam epitaxy of CdSe epilayers and quantum wells on ZnTe substrate

We have grown zinc-blende cadmium selenide (CdSe) epilayers on ZnTe-(0 0 1) substrate by molecular beam epitaxy (MBE). By controlling the substrate temperature and beam-equivalent pressure (BEP) ratio, of Se to Cd, we determined the most suitable growth condition based on reflection high-energy electron diffraction (RHEED) pattern. At a substrate temperature of 280 °C and a BEP ratio of 3.6, the RHEED pattern showed a V-like feature, indicating a rough surface with facets. As the substrate temperature was increased to 360 °C at the same BEP ratio, a V-like RHEED pattern moved to a clear streaky pattern. Moreover when the BEP ratio was increased to 4.8 at 360 °C of substrate temperature, a clear (2 × 1) reconstruction of the CdSe layer was observed. A CdSe/CdMgSe single quantum well structure was also grown on ZnTe-(0 0 1) substrate by MBE. The RHEED pattern showed a clear (2 × 1) surface reconstruction during the growth. By photoluminescence measurement, a good optical property of the structure was obtained.     

(ZnSe)n(n=1,2)团簇结构及ZnSe分子热力学性质的理论计算

用密度泛函B3LYP方法、6-311 G基组对(ZnSe)n(n=1,2)分子体系进行了理论研究,得到(ZnSe)n(n=1,2)分子体系的基态电子状态的平衡几何Re、谐振频率、偶极矩和离解能De及不同温度、压力下的热力学函数值;设用总能量中的电子和振动能量近似代表ZnSe分子处于固态时的能量,用总熵中的电子和振动熵近似代表ZnSe分子处于固态时的熵,进而计算了Zn与Se反应的ΔH0、ΔS0、ΔG0,并由此计算出不同温度的反应平衡常数Kp.结果表明:在298~1150 K温度范围内,Zn与Se反应的自由能值均为负,且随着温度的升高,ΔG0值负的越多,表明在这个温度范围内反应能自发发生,而且自发趋势随温度的升高逐渐增大;平衡常数逐渐减小,即反应进行程度随温度的升高逐渐减小;ZnSe分子材料的导电性随压力增大而增强.     

Photovoltaic activity in a ZnSe/PEO–chitosan blend electrolyte junction

Thin films of ZnSe and PEO–chitosan blend polymer doped with NH₄I and iodine crystals were prepared to form the two sides of a semiconductor electrolyte junction. ZnSe was electrodeposited on indium tin oxide (ITO) conducting glass. The polymer is a blend of 50 wt% chitosan and 50 wt% polyethylene oxide. The polymer blend was complexed with ammonium iodide (NH₄I), and some iodine crystals were added to the polymer–NH₄I solution to provide the I⁻/I³⁻redox couple. The room temperature ionic conductivity of the polymer electrolyte is 4.32 × 10⁻⁶ S/cm. The polymer film was sandwiched between the ZnSe semiconductor and an ITO glass to form a ZnSe/polymer electrolyte/ITO photovoltaic cell. The open circuit voltage (V _oc) of the fabricated cells ranges between 200 to 400 mV and the short circuit current between 7 to 10 μA.     

The two-phase region in 2(ZnSe)x(CuInSe2)1−x alloys and structural relation between the tetragonal and cubic phases

The two-phase region in the system 2(ZnSe)_x(CuInSe₂)_1−x covers the chemical composition range 0.10<x?0.36, in which a tetragonal and a cubic phase are coexisting. The structural relation between both phases was determined by selected area diffraction (SAD) and transmission electron microscopy (TEM). Both crystal structures are very similar and the extremely small mismatch of the lattice constants of the tetragonal phase and the embedding cubic matrix phase allows for the grain boundaries to be virtually strain-free and, therefore, without notable dislocations. The tetragonal phase forms grains of flat discus-like shape in the ambient cubic matrix, with the short discus axis parallel to the tetragonal c-axis. TEM experiments proved that the discus-shaped tetragonal particles are collinear with the (100)_cub, (010)_cub and (001)_cub planes of the cubic phase. Cooling and annealing experiments revealed a near-equilibrium state only to be realized for small cooling rates less than 2 K/h and/or for a long-time annealing with subsequent rapid quenching. Only then there will be no cation ordering in both, the tetragonal domains and the parental cubic matrix phase. If, however, the samples are kept in a state far away from the equilibrium condition both phases reveal Stannite-type cation ordering. Within the composition range of 0?x?0.10 only tetragonal 2(ZnSe)_x(CuInSe₂)_1−x-alloys exist. At concentration rates above 36 mol% 2(ZnSe) only cubic structured solid solutions of ZnSe and CuInSe₂ are found to be stable. However, in the range 36 mol% to about 60 mol% 2(ZnSe) tiny precipitates with Stannite-like structure exist, too.