Ground state properties of a Bose－Einstein condensate confined in an anharmonic external potential

In light of the interference experiment of Bose－Einstein condensates, we present an anharmonic external potential model to study ground state properties of Bose－Einstein condensates. The ground state energy and the chemical potential have been analytically obtained, which are lower than those in harmonic trap. Additionally, it is found that the anharmonic strength of the external potential has an important effect on density and velocity distributions of the ground state for the Thomas－Fermi model.     

Electronic structure of Yb/H－Si (111) interface

Photoemission spectra are measured for Yb covered surface of wet-chemically-etched H－Si (111). The results reveal that the lattice structure of the H－Si (111) surface is stable against the deposition of Yb atoms. X-ray photoemission spectra indicate the formation of a polarized (dipole) surface layer, with the silicon negatively charged. Ultraviolet photoemission spectra exhibit the semiconducting property of the interface below one monolayer coverage. Work function variation during the formation of the Yb/H－Si (111) interface is measured by the secondary-electron cutoff in the ultraviolet photoemission spectral line. The largest decrease of work function is ～1.65eV. The contributions of the dipole surface layer and the band bending to the work function change are determined to be ～1.15eV and ～0.5eV, respectively. The work function of metal Yb is determined to be ～2.80±0.05eV.     

Comprehensive research about the cooperative up-conversion luminescence of the ytterbium-doped oxyfluoride vitroceramics

The cooperative up-conversion blue luminescence of Yb^{3+} ion-doped oxyfluoride vitroceramic material (Yb:FOV) and the influence of co-doped Ho^{3+} ion, when excited by a 960 nm diode-laser, are studied in this paper. A strong blue 479.1 nm up-conversion luminescence of the Yb:FOV material is discovered. It is found that the 479.1 nm luminescence results from the cooperative up-conversion of the coupled states of the Yb^{3+}－Yb^{3+} clusters formed by two adjacent Yb^{3+} ions. The measured cooperative up-conversion luminescence main peak 479.1 nm of this paper is different from the characteristic fluorescence main peak of the Tb^{3+} ion positioned at about 495－504 nm wave-range. Our result coincides with all the published correct papers, whose cooperative up-conversion luminescence main peaks of the direct Yb^{3+}－Yb^{3+} clusters are all positioned at about 476－480 nm wave-range. All of these indicate that the large cooperative up-conversion blue luminescence of the direct Yb^{3+}－Yb^{3+} clusters discovered in this paper is stable. It further proves that the cooperative up-conversion green luminescence may result from the Yb^{3+}-Tb^{3+} cooperative effect. In particular, the original work of this paper improves considerably on the traditional concept by the experimental facts that the blue 479.1 nm cooperative up-conversion luminescence strength of Yb(5):FOV is 230 times greater than that of fluoride glass Yb(3):ZBLAN. This is a great development to meet the practical requirements for blue up-conversion luminescence strength. This result indicates that the large cooperative up-conversion blue luminescence could be achieved excellently by using a suitable material, such as oxyfluoride vitroceramic, which provides a better chance to form better Yb^{3+}－Yb^{3+} clusters and has less relaxation to keep the more efficient up-conversion luminescence. It is also found that impurities seriously reduce the cooperative up-conversion luminescence intensity due to the cross-relaxation from the Yb^{3+}－Yb^{3+} clusters, which means that the cooperative up-conversion blue luminescence could be further improved by pure Yb^{3+} ion-doped materials that have as few impurities as possible to reduce the cross-relaxation. The large cooperative up-conversion blue luminescence of Yb(5):FOV also comes from its higher concentration (5 mol%) of activator Yb^{3+} ion which acts well because the cooperative up-conversion blue luminescence intensity varies linearly against the square of the concentration of Yb^{3+} ions in the range of 0.5－5 mol%. In summary, the great improvement of our work on cooperative up-conversion blue luminescence results from the comprehensive enhancement of the factors of better-coupled chance of the Yb^{3+}－Yb^{3+} clusters, less cross-relaxation, better concentration contribution of Yb^{3+} activator, non-saturation, and better up-conversion luminescence efficiency.     

Bound states of the Klein－Gordon and Dirac equations for scalar and vector harmonic oscillator potentials

We give the exact bound states of the Klein－Gordon and Dirac equations with equal scalar and vector harmonic oscillator potentials.     

Fabrication and optical properties of platinum nanowire arrays on anodic aluminium oxide templates

Arrays of Pt nanowires, fabricated by electrodepositing Pt metal into nanoporous anodic aluminium oxide (AAO) templates, exhibit a preferable optical absorption band in the ultraviolet-visible (UV-VIS) spectra and present a blueshift as the wire aspect ratio increases or its radius decreases. This type of optical property of Pt nanowire/porous alumina composites has been theoretically explored using Maxwell－Garnett (MG) effective medium theory. The MG theory, however, is only applicable to nanowires with an infinitesimally small radius relative to the wavelength of an incident light. The nanowire radius is controlled by the pore radius of the host alumina, which depends on anodizing conditions such as the selected electrolyte, anodizing time, temperature and voltage. The nanowire aspect ratios depend on the amount of Pt deposited into the nanopores of AAO films. The optical absorption properties of the arrays of Pt nanowires with diameters of 24, 55 and 90 nm have been investigated by the UV-VIS spectra, which show that the extinction maximum (λ_max) shifts to shorter wavelength side as the wire aspect ratio increases or its radius decreases. The results are qualitatively consistent with those calculated based on the MG theory.     

ZnSe薄膜的化学反应辅助热壁外延法生长及特性研究

本文通过将新型化学气相反应促进剂Zn(NH4)3Cl5引入到热壁外延系统中,以二元素单质Zn和Se为原料,直接在Si(111)衬底上生长了高质量的ZnSe晶体薄膜,薄膜成分接近理想化学计量比。研究了主要工艺参数对薄膜生长形貌和性能的影响。采用SEM、AFM、EDS和PL谱技术研究了生长的ZnSe薄膜的形貌、成分和发光特性。研究结果表明,热壁温度和生长时间是影响ZnSe薄膜形貌的主要因素;气相反应促进剂在薄膜生长和调节成分方面扮演了关键角色,Zn(NH4)3Cl5的存在使得Zn(g)和Se2(g)合成ZnSe晶体的反应转变为气固非一致反应,从而更容易获得近乎理想化学计量比的ZnSe薄膜。ZnSe薄膜在氦镉激光激发下,室温下PL谱由近带边发射和(VZn-ClSe)组合的SA发光组成,而在飞秒激光激发下,仅在481nm处显示出强烈的双光子发射峰。     

Low temperature growth and characterization of ZnSe films grown on GaAs

Metalorganic vapor phase epitaxy (MOVPE) growth experiments of ZnSe on GaAs (100) are described using ditertiary butylselenide as the selenium source. The growth temperature was varied between 300 and 400°C and the growth rate was determined. Below a vapor pressure ratio P_Se/P_Zn of about 5, the selenium is the growth limiting component. The quality of the samples was analyzed by Nomarski microscopy, x-ray diffraction, high resolution transmission electron microscopy, and photoluminescence. Although the selenium-precursor was not specially purified, a sharp excitonic luminescence appears in samples grown at 400°C. The MOVPE growth of ZnSe still suffers from prereactions when H₂Se is used. The optimum growth is above 450°C even with precursors as DMSe or DESe which are less harmful than the hydride. This paper reports results obtained with a novel selenium-precursor: ditertiarybutylselenide.¹     

IntegratedIn Situ wafer and system monitoring for the growth of CdTe/ZnTe/GaAs/Si for mercury cadmium telluride epitaxy

Reproducible improvements in the metalorganic vapor phase epitaxy (MOVPE) grown CdTe buffer quality have been demonstrated in a horizontal rectangular duct silica reactor by the use of integratedin situ monitoring that includes laser reflectometry, pyrometry, and Epison concentration monitoring. Specular He-Ne laser reflectance was used toin situ monitor the growth rates, layer thickness, and morphology for both ZnTe and CdTe. The substrate surface temperature was monitored using a pyrometer which was sensitive to the 2–2.6 μm waveband and accurate to ±1°C. The group II and group VI precursor concentrations entering the reactor cell were measured simultaneously using two Epison ultrasonic monitors and significant variations were observed with time, in particular for DIPTe. The surface morphology and growth rates were studied as a function of VI/II ratio for temperatures between 380 and 460°C. The background morphology was the smoothest for VI/IIratio in the vicinity of 1.5–1.75 and could be maintained using Epison monitors. Regularly shaped morphological defects were found to be associated with morphological defects in the GaAs/Si substrate. The x-ray rocking curve widths for CuK_α (531) reflections were in the range of 2.3–3.6 arc-min, with no clear trend with changing VI/II ratio. X-ray topography images of CdTe buffer layers on GaAs/Si showed a mosaic structure that is similar to CdTe/sapphire substrates. The etch pit density in Hg_1-xCd_xTe layers grown onto improved buffer layers was as low as 6 x 10⁶ cm^-2 for low temperature MOVPE growth using the interdiffused multilayer process.     

Effect of annealing in N2 atmosphere on net acceptor concentration in ZnSe:N grown by MOCVD

Annealing effect on net acceptor concentration in ZnSe:N is investigated. ZnSe:N homo-epitaxial layer was grown at 823 K by MOCVD using ammonia (NH₃) as a dopant source. Photoluminescence (PL) spectra measured on as-grown layer exhibited the strong deep donor–acceptor pair (D^dAP) emission and the weak I₁^N emission line. In order to enhance the activation of nitrogen in ZnSe epitaxial layer, sample was annealed at the 823 K in nitrogen (N₂) and hydrogen (H₂) atmosphere. Only the annealing in nitrogen atmosphere increased I₁^N emission intensity indicate the activation of nitrogen acceptor. And net acceptor concentration was estimated to be 3 × 10¹⁷cm⁻³ by C–V measurements. This activation mechanism is interpreted as hydrogen is released from N–H bonds during annealing in nitrogen atmosphere.     

Electrical and photo-luminescence properties of ZnSe epitaxial layers grown on GaAs (100) by atmospheric pressure MOVPE: The role of substrate temperature

Epitaxial layers of ZnSe ranging in thickness from 5μm to 30 μm have been grown on GaAs (100) substrates over the temperature range 240° C to 340° C by atmospheric pressure MOVPE employing dimethylzinc and hydrogen selenide. An optimum growth temperature of 280 ± 5° C has been identified and when grown at this temperature the ZnSe epitaxial layers exhibit low resistivity (ρ_{298 K} ≤ 10 ohm · cm), a low compensation ratio (θ_{298 K} = 0.27), a carrier mobility (μ_{298 K}) of 250 ±10 cm²V^-1s^-1) and aren-type (n _{298 K} = 8.0 × 10¹⁴ cm^-3). The ratio of photoluminescence intensity measured at 298K and at 12 K is high (10⁴) and is dominated by a sharp emission due to excitons bound to neutral donors at 2.7956 eV. Mass spectrometric investigations of the chemical reactions occurring inside the reactor in the presence of the GaAs substrate indicate significant surface-controlled reactivity in the region of 280° C.