SO4●－自由基氧化酪氨酸反应中的溶剂效应

研究了水-乙腈混合溶液中SO4●－自由基氧化酪氨酸的反应.实验结果表明，SO4●－自由基氧化酪氨酸的反应机制不因乙腈的加入而改变，但所产生的瞬态粒子的动力学行为受到较大影响.随介质中乙腈体积分数的增加，SO4●－的衰变速率减慢而酪氨酸中性自由基（TyrO●）的衰变速率加快.我们认为这两种自由基所呈现出来的相反的溶剂效应是由于其所带电荷的不同.随介质中乙腈体积分数的增加，SO4●－氧化酪氨酸的反应速率减慢.这一实验结果意味着，在有机溶剂存在的情况下TyrO●/ TyrOH的氧化还原电势可能发生了变化，从而旁证了关于TyrO●/ TyrOH的氧化还原电势因酪氨酸从游离状态变到肽或蛋白质中而发生变化的推测.     

Co—Mo／MgO—Al2O3水煤气耐硫变换催化剂失活的研究

利用Ｘ－射线衍射，扫描电镜，拉曼光谱，等离子发射光谱和比表面测定等方法研究了不同状态下失活及新鲜催化剂的结构，杂种类及含量。结果表明，超温使催化剂晶化明显，制备方法对催化剂结构有直接影响，再生使其强度降低，条形催化剂比较容易粉化，无机杂质是次要的失活原因。     

Preparation and characterization of high-specific-surface-area activated carbons from K2CO3-treated waste polyurethane

An activated carbon with high specific surface area was prepared from polyurethane foam by chemical activation with K2CO3 and the influences of carbonization temperature and impregnation ratio on the pore structure of the prepared activated carbon were investigated. It was found that the specific surface area of the activated carbon was at a maximum value (about 2800 m(2)/g) at a carbonization temperature of 1073 K and at an impregnation ratio of 1.0. It was concluded that the polyurethane foam structure was modified during impregnation by K2CO3, K2CO3 promoted charring during carbonization, and then the weight loss behavior was changed below 700 and above 1000 K, carbon in the char was consumed by K2CO3 reduction, and this led to the high specific surface area. The prepared activated carbon had a very sharp micropore size distribution, compared with the commercial activated carbon having high specific surface area. The amounts of three organic vapors (benzene, acetone, and octane) adsorbed on the prepared activated carbons was much larger than those on the traditional coconut shell AC and the same as those on the commercial activated carbon except for octane. We surmised that the high specific surface area was due to the modification of the carbonization behavior of polyurethane foam by K2CO3.     

Atomistic tight-binding computations of the electronic properties of ZnSe/ZnS core/shell nanocrystals under applied electric field

The effect of applied electric field on the electronic properties of spherical ZnSe/ZnS core/shell nanocrystals of experimentally relevant size is investigated by the atomistic tight-binding theory. Using this model, the calculations show that a range of electronic properties, including the single-particle spectra, atomistic characters, charge densities, excitonic energies, ground-state coulomb energies, overlaps of the electron and hole wave functions and oscillation strengths, all depend on the strengths of the applied electric field. The spatial distributions of the electron and hole wave functions are induced by the applied electric field. The analysis demonstrates a clear manipulation of the electronic properties of ZnSe/ZnS core/shell nanocrystals by introducing and varying the applied electric field strengths. According to the comprehensive investigations, I suppose that these atomistic computations will be of prospective help for experimental works concentrated on the new optoelectronic devices based on the applied electric field.     

Monocrystalline ZnSe as an ionising radiation detector operated over a wide temperature range

This work presents an analysis of the main requirements for semiconductor detectors of ionising radiation that can be operated over a wide temperature range. The analysis shows that wide-gap semiconductors with a band gap greater than 2.0 eV are a better option for effective detection of ionising radiation at high temperatures. The results of an experimental investigation into the luminescent, electrical and spectrometric properties of the wide-gap semiconductor ZnSe are shown as an example. Undoped monocrystalline ZnSe has an extremely low leakage current over a wide range of temperatures up to 167 °C and can be used as a radiometric X-ray detector in pulse-counting mode over a wide temperature range up to at least 130 °C.     

A Novel One‐Pot Synthesis of UV‐Blue ZnSe Nanocrystals in Aqueous Solution

Described herein is a novel one‐pot aqueous synthesis of ZnSe nanocrystals has featuring the utilization of Na₂SeO₃ and Zn(AC)₂×2H₂O as Se and Zn source, glutathione (GSH) as stabilizing agent and reducing agent. By this approach, the UV‐blue ZnSe QDs with quantum yield (QYs) up to 19% have been synthesized with a molar ratio of Se/Zn/GSH at 1:4:8.5 under aqueous conditions at 110 °C. XRD and TEM show the ZnSe QDs are zinc cubic structure particles with an average diameter of 3–5 nm.     

Selective etching of ZnTe in HF:H2O2:H2O solution: Interpretation of extended defect‐related etch figures

HF:H₂O₂:H₂O solution (40%wt.HF: 30wt.%H₂O₂: H₂O, 3:2:1 by volume) was used to reveal extended defects (line, face and volume defects) in bulk ZnTe crystals grown from Te solution. The etch patterns were analyzed based on their size, shape and distribution. The etch figures, both in the shape of pits and hillocks with high resolution, show forms controlled by the symmetries of the respective faces were produced. Two different sizes of pits were observed, the larger‐size pits correspond to dislocations penetrating the surface, however, the smaller‐size texture pits are produced on the defect‐free region, which serve as standard pits on respect faces. The face defects, such as grain boundaries, sub‐grain boundaries, dislocation walls, twins and stacking faults, can be all displayed clearly. Another essential feature of the etchant is that, it can effectively dissolve Te‐rich phase (Te inclusion/precipitates), which makes it promising to reveal the shape of this volume defect.     

ZnSe纳米片晶的可控合成

以乙二胺四乙酸(EDTA)为稳定剂、丁胺(BA)为结构导向模板, 采用水热合成方法制备了尺寸和晶型可控的ZnSe纳米片晶; 利用XRD, TEM, SEM以及紫外-可见漫反射等手段对所得的产物进了表征, 结果表明, 通过改变水热温度和BA用量, 可以实现ZnSe纳米片晶的大小和物相的调控, 并初步分析了其形成过程.     

溶剂热法合成ZnSe纳米球

以乙酸锌和Se粉为原料,环己酮为溶剂,于180 ℃反应24 h制得黄色纳米球ZnSe,其结构和性能经XRD,SEM及TEM表征.     

ZnTe(ZnTe∶Cu)多晶薄膜的XPS研究

用共蒸发法在室温下制备了ZnTe及ZnTe∶Cu多晶薄膜,测量了电导率温度曲线,发现不掺杂的ZnTe薄膜的暗电导随温度的增加而线形增加,呈常规的半导体材料特征;掺Cu的ZnTe薄膜在温度较低时,lnσ随温度升高而缓慢增加,随后缓慢降低,达到一极小值,当温度继续升高时又陡然增加,呈现异常现象。用XPS研究了N₂气氛下退火前后表面状态,发现不掺Cu的ZnTe薄膜呈现富Te现象。掺Cu后Te氧化明显,以ZnTe形式存在的Te明显减少;ZnTe∶Cu薄膜中Zn的含量在退火前后变化明显,退火前,Zn主要以ZnTe形式存在,退火后Zn原子向表面扩散,使表面成分更加均匀,谱峰变宽;退火时,部分Cu原子进入晶格形成Cu_xTe相,引起载流子浓度变化,导致ZnTe∶Cu多晶薄膜的电导温度关系异常。