红外用CVD ZnS多晶材料的研制

论述了制备红外用CVD ZnS多晶材料的化学气相沉积工艺和热等静压处理工艺。针对CVD ZnS多晶材料具备优良的光学和力学性能,采用化学气相沉积工艺和热等静压处理技术成功研制出大尺寸多晶材料,其最大尺寸达到250mm×15mm。测试了CVD ZnS样品的各项光学、力学性能指标。样品的全波段透过率均接近ZnS材料的本征水平,折射指数均匀性优于2×10^-5,在1.06μm的吸收系数为2×10^-3cm^-1,抗弯强度达到104MPa。     

Physical properties of Pb doped ZnS thin films prepared by ultrasonic spray technique

In the present work, high quality Pb doped ZnS thin films were deposited on glass substrates at 450°C using spray ultrasonic technique. The dependence of the structural, morphological and optical properties of the films on the lead (Pb) doping amount was investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–vis–NIR spectrophotometry, and four-point method. The improvement of the obtained Pb:ZnS thin films properties were discussed as a function of Pb concentration (0.5 to 2 at.%). The average crystallite size of Pb:ZnS was found in the range of 25–37 nm. The scanning electron microscopy (SEM) reveals that the films are continuous, homogeneous and dense. The UV–vis–NIR spectroscopy characterizations demonstrated that all the films exhibit good transmittance (60–70%) in the visible region and their optical band gap energy ($E_{\mathrm{g}}$) changes from 3.92 to 3.6 eV. The films electrical resistivity showed an apparent dependence on Pb content.     

CdTe/ZnS双层钝化碲镉汞长波探测器制备的研究

开展了CdTe/ZnS双层钝化碲镉汞长波探测器制备的研究。CdTe钝化膜经退火热处理后,可实现CdTe/MCT界面的互扩散,并改善CdTe钝化膜的质量。通过全湿法腐蚀方法完成了金属化开口,制备了长波碲镉汞600×18@15 μm规格线列和640×512@15 μm规格面阵。线列I-V测试表明:CdTe/ZnS双层钝化膜能有效地减少长波碲镉汞器件的表面漏电流,器件的反向结特性良好。面阵在77K测试:NETD 26.7 mK,有效像元率95.4%,并对室温目标进行了凝视成像。测试过程出现了4%左右由噪声引起的零散盲元,是由芯片面阵局部钝化失效引起的,表明钝化膜沉积工艺及芯片加工工艺尚有改进的空间。     

Synthesis, Structure and Growth Mechanism of ZnS Nanowires with High Aspect Ratio

ZnS nanowires were successfully synthesized through the direct reaction of Zn and S vapor via carbon-assisted chemical evaporation deposition method with Au catalyst. The investigations indicated that the size of ZnS nanowires with a diameter of approximately 40 nm was uniform along the axis of the wire and the surfaces were slick. The ZnS nanowire with a hexagonal wurtzite structure was a typical single crystalline structure. HRTEM and SEAD results demonstrated that the nanowire grew along [100] direction, which was different from the common direction reported in literatures. The growth of nanowires was controlled by vapor-liquid-solid (VLS) mechanism.     

纳米硫化锌的生物还原-化学沉淀耦合制备及其性能表征

生物还原-化学沉淀耦合反应法制备了纳米硫化锌,采用XRD、SEM、TEM、EDS、PL、FTIR等测试手段对产物进行了结构形貌性能表征。结果表明,在加入与Zn²⁺等物质的量浓度的EDTA后,Zn²⁺对硫酸盐还原菌(SRB)的毒性消除,SRB的较快生长和SO₄^2-的高效还原得以实现,EDTA修饰的生物转化-化学沉淀耦合系统可制备出高纯的纳米硫化锌晶体。制备的纳米ZnS实心微球体形状规则、分散均匀、大小一致,一次粒子直径10～15 nm,二次粒子直径400 nm左右。光致荧光光谱和红外光谱分析显示,ZnS纳米粒子在396 nm处出现荧光发射峰,在465 nm处出现缺陷发光峰,而且具有良好的红外透过性。分散剂聚丙烯酰胺(polyacrylamide)的加入导致产物ZnS的形貌和粒度改变,二次粒子的平均直径减至100 nm以下,其荧光发射峰强度增强,红外透过性提高。     

基于Mn掺杂ZnS量子点室温磷光法测定水样中百草枯

利用水相合成法制备了3-巯基丙酸(3-Mercaptopropionic Acid,MPA)包裹的Mn掺杂ZnS量子点(Quantum Dots,QDs),基于该量子点的室温磷光性质,构建了一种快速、灵敏检测水样中百草枯(Paraquat,PQ)含量的新方法。方法无需添加任何除氧剂和诱导剂等复杂的预处理过程。在pH=7.4的磷酸盐缓冲溶液中,PQ通过静电作用可以猝灭Mn掺杂ZnS QDs在波长590nm处的磷光,且在一定范围内PQ的浓度与磷光猝灭强度(P0/P)呈良好的线性关系,线性范围为2.5~50μg/L,相关系数为0.994,方法检出限为0.769μg/L。该方法适用于不同水样中百草枯的痕量检测。     

温度对Si衬底上低压MOCVD外延生长ZnS薄膜质量的影响

用低压MOCVD系统在(111)Si衬底上,用两步生长方法(改变/流量比)在300～400℃时外延生长了ZnS单晶薄膜。随着衬底温度的降低,ZnS薄膜结晶质量提高,并在300℃生长时获得结晶完整性较好的(111)ZnS单晶薄膜。文中讨论了衬底温度对薄膜质量的影响。     

硫化锌薄膜的微结构剖析

用Ｘ射线衍射和Ｘ射线光电子能谱技术,对分舟热蒸发法研制的掺铒（Ｅｒ）硫化锌直流电致发光薄膜及硫化锌粉料进行剖析,获得薄膜表面及粉料的构态信息,讨论了影响微晶薄膜质量的主要因素。     

水热合成介观结构的ZnS纳米纤维

以Zn(Ac)₂和Na₂S为原料、EDTA为稳定剂、OA为结构导向模板,采用水热合成方法成功地制备了具有层状介观结构的ZnS纳米纤维;通过XRD, TEM, SEM, N₂-吸附/脱附以及紫外-可见漫反射等手段对所得的产物进了表征,并初步探讨了其形成机理.     

Der Chemische Transport von Mischkristallen im System FeS/MnS/ZnS

Chemical Vapor Transport of Solid Solutions. 7. Chemical Vapor Transport of FeS/MnS/ZnS Mixed Crystals By means of chemical vapor transport using iodine as transport agent (900 → 800 °C) it is possible to prepare in the quasiternary system FeS/MnS/ZnS the mixed crystals (Fe,Mn,Zn)S (sphalerite and wurtzite type), (Fe,Mn)S(ZnS) (NaCl type) and FeS(MnS,ZnS) (NiAs type) in form of single crystals. Based on the composition of these phases the phase diagram for the system FeS/MnS/ZnS at 800 °C was drawn up. The incongruent transport process leads to the accumulation of ZnS in the crystallization zone.