Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO

Wet etch rates at 25°C for Zn_0.9Mg_0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min⁻¹ with HCl/H₂O (5×10⁻³−2×10⁻² M) and 120–300 nm · min⁻¹ with H₃PO₄/H₂O (5×10⁻³−2×10⁻² M). Both of these dilute mixtures exhibited diffusion-limited etching, with thermal activation energies of 2–3 kCal · mol⁻¹. By sharp contrast, the etch rates for ZnO also grown on sapphire by PLD were much slower in similar solutions, with rates of 1.2–50 nm · min⁻¹ in HCl/H₂O (0.01–1.2 M) and 12–54 nm · min⁻¹ in H₃PO₄/H₂O (0.02–0.15 M). The etching was reaction limited over the temperature range 25–75°C, with activation energies close to 6 kCal · mol⁻¹. The resulting selectivity of Zn_0.9Mg_0.1O over ZnO can be a high as ∼400 with HCl and ∼30 with H₃PO₄.     

热氧化磁控溅射金属锌膜合成一维ZnO纳米棒

利用退火热氧化射频磁控溅射金属锌膜的方法在Si(111)衬底上制备了一维Zn O纳米棒,同时用多种测试手段对样品的晶体结构、表面形貌和光学性能进行了研究.XRD,SEM和TEM的测试结果表明,Zn O纳米棒为单晶相六方纤锌矿结构,呈头簪状向外发散生长,直径在30～60 nm左右,其长度可达几μm.PL 谱测试结果表明:在波长为280 nm光的激发下,在372 nm处有强的近带边紫外光发射和516 nm处的较微弱深能级绿光发射.说明合成的一维Zn O纳米棒的结晶质量和光学性能优良     

Preparation of nanosized ZnO using α brass

Nanosized ZnOs were synthesized on the surface of α brass coated a film of nickel catalyst at 500-700 °C under atmosphere of O₂ and CH₄ gases. The nanosized ZnOs have shapes including pillar, leaf, sheet and rod, which were determined by the synthesis temperature and the flow rates of O₂ and CH₄ gases. The nanosized ZnOs were characterized by electron microscopy including transmission electron microscope for crystal structure, morphology and high resolution images, both field emission scanning electron microscope and scanning electron microscope for morphology, and energy dispersive X-ray spectroscope equipped in electron microscope for chemical composition. A mechanism was proposed for the growth of nanosized ZnO obtained in this work.     

Kinetics and mechanism of free-surface vaporization of zinc, cadmium and mercury oxides analyzed by the third-law method

On the basis of critical comparison of experimental and theoretical values of the E parameter and investigation of the retardation effect of oxygen on the evaporation rate of ZnO, CdO and HgO, it was concluded that the dissociative evaporation of ZnO and HgO proceeds with releasing of atomic oxygen (O) as a primary product of decomposition. By contrast, the mechanism of dissociative evaporation of CdO corresponds to the equilibrium reaction with releasing of molecular oxygen (O₂) as a primary product of decomposition. As was shown, this difference in mechanisms is not related with interatomic OO distances in these oxides. From the analysis of crystal structure for 12 different oxides, which evaporate with releasing of atomic oxygen, and for 13 compounds, which evaporate with releasing of molecular oxygen, it was revealed that the first mechanism is observed for all oxides with the cubic crystal structure. It was proposed that a decisive role in this difference belongs to a local symmetry in the position of O atoms.     

Reduction of dislocation density and improvement of optical quality in ZnO layers by MgO-buffer annealing

Optical properties of ZnO thin films with/without MgO-buffer annealing were investigated by low and room temperature photoluminescence measurements. The ZnO films were grown on c-sapphire substrates by plasma-assisted molecular-beam epitaxy employing a thin MgO-buffer layer. Dislocation density of ZnO layer was reduced from 5.3 × 10⁹ to 1.9 × 10⁹ cm⁻² by annealing MgO-buffer prior to the growth of ZnO. The intensity of free exciton emission from the sample with MgO-buffer annealing was almost twice of that from the sample without annealing, while the deep level emission from the sample with MgO-buffer annealing was about 1/3 of that without annealing. The MgO-buffer annealing improves optical quality of overgrown ZnO films.     

圆形振动膜ZnO压电微传声器的研制

本文介绍了一种新型圆形振动膜ZnO压电微传声器的制备，并对传声器制备的工艺过程进行了较为详细的描述。圆形振动膜的压电传卢器与以前方形振动膜结构设计相比，较大幅度提高了传声器的灵敏度和成品率，灵敏度达到-70dB（相对于1V／Pa），成品率达到80％。     

Characteristics of Schottky Barrier Junction Based on Hexagonal Microtube ZnO

Hexagonal microtube ZnO was firstly grown on single crystal p-Si (111) substrates by hydrothermal method, and fabricated Ag/n-ZnO and Au/n-ZnO Schottky junction. Schottky effective barrier heights were calculated by I-V measurement. It is confirmed that the presence of a large amount of surface states related possibly to lattice imperfections existed near the surface leads to the pinning of the surface Fermi level at 0.35 eV below the conduction-band edge. Then the fabricated Schottky barrier junctions are evaluated for their use as UV photodetectors.     

有机/无机异质结薄膜发光二极管

聚合物发光二极管（LED）自从Burrou吵es等于1990年首次报导PPV的电致发光［‘］以来，由于聚合物半导体具有热和化学性能的稳定，克眼了有机小分子材料容易晶化的优点，在平板显示领域必将占有一席之地，从而吸引了许多科学家投身到这一领域来．众所周知，要想实现LED的实用化     

ZnO对Ag/SiO2催化剂银的分散作用及对吲哚合成稳定性的影响

将ZnO助剂加到由苯胺和乙二醇一步合成吲哚的Ag/SiO2催化剂中,发现ZnO助剂能大大提高催化剂的稳定性.XRD和TEM表征首次得到:ZnO是结构型助剂,它能使银很好地分散在SiO2表面上,并可有效地抑制反应过程中银粒子的烧结.