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11.
In this article, dendritic‐like CdS has been prepared by a hydrothermal method using thiourea as the sulfur source, and the effects of experimental conditions on the morphologies of CdS have been investigated. The performances of CdS have been analyzed by X‐ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and the fluorescence and photodegradation properties of CdS have also been investigated. The XRD result indicates that the dendritic‐like CdS are of hexagonal phase and they are highly crystallized. Also, the FESEM results show that the ratio of raw material affects the yield of CdS, the reaction time affects the morphology of CdS. The best morphology of CdS is dendritic structures and the length is about 6 μm. The fluorescence spectrum shows three peaks at 470 nm, 513 nm and 547 nm, which indicates that the dendritic‐like CdS mainly emits green and blue fluorescence. Moreover, the dendritic‐like CdS exhibits good photocatalytic activity and its photodegradation rate to methylene blue can reach 92%. The growth mechanism for the formation of CdS with dendritic structure is also described.  相似文献   
12.
In this article, flower‐like CdS structures have been prepared by a hydrothermal method with SDBS as surfactant. The influences of different experimental conditions on the morphologies, UV‐Vis and fluorescence properties of CdS have been investigated. The performances of CdS have been analyzed by X‐ray diffraction (XRD), field emission scanning electron microscopy (FESEM), ultraviolet‐visible (UV–Vis) and room‐temperature photoluminescence (PL). The XRD result indicates that the flower‐like CdS structures are of hexagonal phase. The FESEM results indicate that the main role of SDBS is to make the CdS crystals assemble together to form the flower‐like structures. The UV–Vis results show CdS has a strong absorption in the ultraviolet region and visible‐light region. The PL results show CdS has two emission peaks, respectively at 461 nm and 553 nm. The growth mechanism for the formation of flower‐like CdS structures is also described.  相似文献   
13.
The present contribution aims at determining the impact of modifying the properties of the absorber/buffer layer interface on the electrical performance of Cu2ZnSnSe4 (CZTSe) thin‐film solar cells, by using a Cd2+ partial electrolyte (Cd PE) treatment of the absorber before the buffer layer deposition. In this work, CZTSe/CdS solar cells with and without Cd PE treatment were compared with their respective Cu(In,Ga)Se2 (CIGSe)/CdS references. The Cd PE treatment was performed in a chemical bath for 7 min at 70 °C using a basic solution of cadmium acetate. X‐ray photoemission spectroscopy measurements have revealed the presence of Cd at the absorber surface after the treatment. The solar cells were characterized using current density–voltage (J–V), external quantum efficiency, and drive‐level capacitance profiling measurements. For the CZTSe‐based devices, the fill factor increased from 57.7% to 64.0% when using the Cd PE treatment, leading to the improvement of the efficiency (η) from 8.3% to 9.0% for the best solar cells. Similar observations were made on the CIGSe solar cell reference. This effect comes from a considerable reduction of the series resistance (RS) of the dark and light J–V, as determined using the one‐diode model. The crossover effect between dark and light J–V curves is also significantly reduced by Cd PE treatment. Copyright © 2015 John Wiley & Sons, Ltd.  相似文献   
14.
The purpose of the present paper is to focus on the impact of oxygen gas partial pressure during the sputtering of i‐ZnO and ZnMgO on the transient behavior of Cu(In,Ga)Se2 (CIGSe) based solar cells parameters when a CBD‐Zn(S,O) buffer layer is used. Based on electrical characterization of cells, it is observed that the effect of light soaking is different on J–V characteristics depending on whether oxygen is or is not present during the first deposition time of the i‐ZnO or ZnMgO layers. In fact, when cells are prepared with standard i‐ZnO, the efficiencies are very low and a pronounced transient behavior is observed. However, when the first 10 nm of i‐ZnO or ZnMgO is formed by sputtered layer without adding oxygen during the process, depending on the thickness of the buffer layer, the transient effects strongly decreases. It is then possible to get stable cells reaching efficiencies quite similar to the CdS reference cells, especially with ZnMgO, without any post‐treatments. Copyright © 2015 John Wiley & Sons, Ltd.  相似文献   
15.
We report synthesis of ZnS quantum dots by chemical method at room temperature. In this technique, ZnS quantum dots are produced by simple chemical reactions where zeolite, acts as matrix, plays the key role in controlling particle growth during synthesis. Quantum dots exhibit luminescence properties such as Zn2+ related emission, efficient low voltage electroluminescence, and super linear voltage-brightness EL characteristics. This study demonstrates the technological importance of semiconductor nanosystems prepared by low cost chemical route.  相似文献   
16.
Abstract  The zinc(II) complex with 2-(2-hydroxyphenyl)benzimidazole, namely [Zn(2-(2-hydroxyphenyl)benzimidazolate)2]·C2H5OH (· C2H5OH) has been synthesized and characterized by X-ray crystallography and photoluminescent analysis. The complex crystallizes in monoclinic space group P21/c with cell parameters a = 10.156(1) ?, b = 25.771(3) ?, c = 9.674(1) ?, α = 90°, β = 103.641(2)°, γ = 90°, Z = 4, V = 2460.4(4) ?3. The central Zn(II) is four-coordinate and has a tetrahedral geometry. The steady-state and time-resolved photoluminescent spectra for the title compound have also been studied. The emission property can be ascribed to ligand-centered charge-transfer transition (LCCT) with π → π* property. Index Abstract   A new co-crystal of Zn(II) complex of 2-(2-hydroxylphenyl)benzimidazole with ethanol solvate has been prepared, characterized by X-ray crystallography and fluorescent studies.   相似文献   
17.
CdS/Si heterojunctions have been prepared through growing CdS nanocrystallites (nc-CdS) on the silicon nanoporous pillar array (Si-NPA) by the chemical bath deposition method. Cadmium nanocrystallites (nc-Cd) have been observed and ascribed to the reducibility of Si-NPA. The reason for the appearance of CdO is indistinct and the related work will be done in the future. The blue, green and red emissions are ascribed to the silicon oxide layer, band gap of nc-CdS and the sulphur vacancies, respectively. Redshift and blueshift with the annealing temperature about green emissions are contributed to quantum size effect and the structure transition from nc-Cd to CdO. It is beneficial for investigating the structures and defects to the application of CdS/Si in the optoelectronic field.  相似文献   
18.
CdS nanotubes with wall thickness comparable to excitonic diameter of the bulk material are synthesized by a chemical route. A change in experimental conditions result in formation of nanowires, and well-separated nanoparticles. The diameter and wall thickness of nanotubes measured to be 14.4 ±  6.1 and 4.7 ± 2.2 nm, respectively. A large number of CdS nanocrystallites having wurzite structure constitute these nanotubes. These nanotubes show high energy shifting of optical absorption and photoluminescence peak positions, compared to its bulk value, due to quantum confinement effect. It is proposed that nucleation and growth of bubbles and particles in the chemical reaction, and their kinetics and interactions are responsible for the formation of nanotubes.  相似文献   
19.
Highly crystalline and transparent cadmium sulphide films were fabricated at relatively low temperature by employing an inexpensive, simplified spray technique using perfume atomizer (generally used for cosmetics). The structural, surface morphological and optical properties of the films were studied and compared with that prepared by conventional spray pyrolysis using air as carrier gas and chemical bath deposition. The films deposited by the simplified spray have preferred orientation along (1 0 1) plane. The lattice parameters were calculated as a = 4.138 Å and c = 6.718 Å which are well agreed with that obtained from the other two techniques and also with the standard data. The optical transmittance in the visible range and the optical band gap were found as 85% and 2.43 eV, respectively. The structural and optical properties of the films fabricated by the simplified spray are found to be desirable for opto-electronic applications.  相似文献   
20.
高择优锌-镍合金电沉积的现场ECSTM研究   总被引:1,自引:0,他引:1  
采用"二步包封"法制备了性能良好的电化学STM针尖.以此为基础采用ECSTM现场研究了工艺条件下HOPG上高择优锌-镍合金的电沉积过程.研究结果表明这种高择优沉积层以侧向生长方式生长,而表面上电化学活性差的晶面构成了晶体生长过程的保留面,从而进一步形成了与基底表面方向一致的高择优沉积层,X射线研究表明这一择优面为(100)晶面.  相似文献   
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