基于NIOSⅡ的多串口数据通信的实现

串口传输常用于基于FPGA和DSP结构的信号处理板和外部设备之间的数据交换。以GPS RTK定位应用为基础,针对单个串口全双工传输不足以应对多种数据类型同时输入输出的情形,设计并实现了一种面向多串口不同类型数据的传输方案。该方案通过增加串口控制寄存器实现单个中断信号即可控制所有串口,采用乒乓交替读写实现数据持续高速输入。测试表明该方案可独立对各串口进行配置,可同时实现GPS定位结果、差分GPS修正数据与外界的交换以及用户控制命令的输入,并且可减少硬件调试时间,节约硬件资源。     

Two-dimensional threshold voltage analytical modes of DMG strained-silicon-on-insulator MOSFETs

For the first time, a simple and accurate two-dimensional analytical model for the surface potential variation along the channel in fully depleted dual-material gate strained-Si-on-insulator (DMG SSOI) MOSFETs is developed. We investigate the improved short channel effect (SCE), hot carrier effect (HCE), drain-induced barrier-lowering (DIBL) and carrier transport efficiency for the novel structure MOSFET. The analytical model takes into account the effects of different metal gate lengths, work functions, the drain bias and Ge mole fraction in the relaxed SiGe buffer. The surface potential in the channel region exhibits a step potential, which can suppress SCE, HCE and DIBL. Also, strained-Si and SOI structure can improve the carrier transport efficiency, with strained-Si being particularly effective. Further,the threshold voltage model correctly predicts a "rollup" in threshold voltage with decreasing channel length ratios or Ge mole fraction in the relaxed SiGe buffer. The validity of the two-dimensional analytical model is verified using numerical simulations.     

亚0.1μm高K栅介质MOSFETs的特性

用二维模拟软件 ISE研究了典型的 70 nm高 K介质 MOSFETs的短沟性能 .结果表明 ,由于 FIBL 效应 ,随着栅介质介电常数的增大 ,阈值电区减小 ,而漏电流和亚阈值摆幅增大 ,导致器件短沟性能退化 .这种退化可以通过改变侧墙材料来抑制     

光纤入侵信号检测及识别算法的嵌入式实现

提出了一种光纤入侵信号检测及识别算法,并根据 算法的处理时间及运算特点分解映射在现场 可编程逻辑门阵列(FPGA)和数字信号处理(DSP)组成的嵌入式处理器上进行实现。处理 流程分为3部分:首先对原始信号进行3Hz高通滤波,将经过高通滤波后的信号平均分成两部分分别由 两块DSP板并行处理以节省时间开销,且后续所有操作均采用并行方式,将滤波后数据进行 标准化并与检测阈值进 行比较,大于阈值则判为振动并置1,否则置0,从而得到单路检测结果;然后根据上述检测 结果提取用于 识别的数据;最后将数据输入识别模块进行机械、走路和镐刨信号的特征提取并得出识别结 果。实验结果表明, 本文算法可以有效检测和识别光纤入侵信号,且提高了运算速度,满足了光纤预警系统(OFPS )对检测及识别信号类型的实时性要求。     

An LDMOS with large SOA and low specific on-resistance

An LDMOS with nearly rectangular-shape safe operation area (SOA) and low specific on-resistance is proposed. By utilizing a split gate, an electron accumulation layer is formed near the surface of the n-drift region to improve current conduction capability during on-state operation. As a result, the specific on-resistance can be lowered down to 74.7 mΩ·cm² for a 600 V device from simulation. Furthermore, under high-voltage and high-current conditions, electrons and holes flow as majority carriers in the n-drift region and p-type split gate, respectively. Due to charge compensation occurring between holes and electrons, the local electric field is reduced and impact ionization is weakened in the proposed device. Therefore, a higher on-state breakdown voltage at large V_GS is obtained and snap-back is suppressed as well.     

基于仲裁器PUF的SRAM FPGA防克隆技术设计与实现

为保护电子设备中使用的静态随机存储器(SRAM)型现场可编程门阵列(FPGA)内部电路设计不被窃取,设计了用于SRAM FPGA的防克隆电路.该电路利用FPGA制造过程中的随机误差,提取每块芯片独一无二的ID.在此ID的控制下,被保护电路只能在指定的FPGA中正常运行,而在未指定的FPGA中运行时,无法产生正确的输出,从而达到防克隆目的.防克隆电路由使用仲裁器的物理不可克隆函数(PUF)、多数表决器、运算门阵列等三部分构成,其中仲裁器PUF电路用于提取ID,多数表决器起到提高输出稳定性的作用.最后在FPGA开发平台上证明了该电路的可行性.     

基于FPGA的数字脉冲压缩算法的设计与实现

介绍了雷达信号处理系统中脉冲压缩技术的现场可编程门阵列（FPGA ）实现方法,研究和分析了线性调频信号的脉冲压缩算法,结合研究目标和设计要求,设计了一种基于数据分段的脉冲压缩处理方法,通过SignalTap仿真证明了其有效性。     

薄膜全耗尽SOICMOS器件和电路

对全耗尽 SOI(FD SOI) CMOS器件和电路进行了研究 ,硅膜厚度为 70 nm.器件采用双多晶硅栅结构 ,即NMOS器件采用 P+多晶硅栅 ,PMOS器件采用 N+多晶硅栅 ,在轻沟道掺杂条件下 ,得到器件的阈值电压接近0 .7V.为了减小源漏电阻以及防止在沟道边缘出现空洞 (V oids) ,采用了注 Ge硅化物工艺 ,源漏方块电阻约为5 .2Ω /□ .经过工艺流片 ,获得了性能良好的器件和电路 .其中当工作电压为 5 V时 ,0 .8μm 10 1级环振单级延迟为 45 ps     

驱动复杂RLC互连树的逻辑门延时

提出了一个用于估计RL C互连树驱动点导纳的闭端等效π模型,并将其用于驱动复杂RL C互连树的逻辑门延时的估计中.与其他方法相比,它具有结构简单、精度较高的特点     

Load-pull measurement analysis of AlGaN/GaN HEMT taking into account number of gate fingers

This paper investigates load-pull measurement of AlGaN/GaN high electron mobility transistors (HEMTs) at different numbers of gate fingers. Scalable small-signal models are extracted to analyze the relationship between each model''s parameters and the number of device''s gate fingers. The simulated S-parameters from the small-signal models are compared with the reflection coefficients measured from the load-pull measurement system at X-band frequencies of 8.8 and 10.4 GHz. The dependency between the number of device''s gate fingers and load-pull characterization is presented.