曲折波导慢波电路的特性

矩形曲折波导具有机械强度高，容易加工，热性能好以及工作频带宽等优点。文中对曲折波导的色散特性和互作用阻抗进行了计算。并指出，将曲折波导应用于毫米波行波管作为其慢波电路，可解决大功率、宽频率和难加工的问题。     

机载圆锥对数螺旋天线及两种馈电方式的研究

论述了机载圆锥对数螺旋天线及其两种馈电方式的设计方法.利用FEKO软件对圆锥对数螺旋天线和两种平衡馈电方式进行了优化仿真分析.结果说明,该天线的电特性能够满足实际工程应用要求.在此基础上,研制了天线实物样机,并对该天线实物样机进行了测试.测试结果表明该天线在2.5～8GHz的工作频率范围内,方向图3dB波瓣宽度为100°左右,轴比小于3dB,驻波系数小于2.测试数据说明该天线的测试结果和仿真分析结果吻合良好,同时也说明该圆锥对数螺旋天线具有宽频带圆极化及宽频带宽波束特性,进而说明该设计方法是有效可行的,并可以推广应用.     

Pt/6H-SiC肖特基势垒二极管特性分析

采用直流磁控溅射法、Pt作肖特基接触的工艺，制作了N型6H—SiC肖特基势垒二极管，对肖特基势垒二极管的电学特性及温度特性进行了研究。实验结果表明，该器件具有很好的整流特性，反向电流小、击穿电压高，且在高温下器件波动很小，能够稳定地工作，适合于在高温(600℃)等恶劣环境下长期可靠地工作。     

Compact Bandpass Filter with high selectivity and wide stopband using Slotted Stepped-Impedance Resonator

In this paper, a Slotted Stepped-Impedance Resonator (SSIR) is proposed. Due to the slots in the low-impedance section of the conventional SIR, the new resonator has a lower fundamental resonance f0 and can provide a potential finite transmission zero fz close to f0. Based on the proposed SSIR, a fourth-order Chebychev BandPass Filter (BPF) is designed at f0=1 GHz. The measured results show that a better than –65 dB rejection is achieved on both the lower and the upper stopband. Moreover, the new filter has a wide –30 dB rejection upper stopband from 1.13f0 to 6.52f0. The fab-ricated filter exhibits a size of The new filter has a planar topology and is easily integrated with modern portable communication systems.     

Synthesis and characterization of a wide bandgap polymer based on a weak donor-weak acceptor structure for dual applications in organic solar cells and organic photodetectors

We synthesized a novel wide bandgap polymer, PDTFBT, forming a weak donor (WD)-weak acceptor (WA) structure for use in organic photodetectors (OPDs) and organic solar cells (OSCs). The fluorination in the D unit and the alkoxy substitution in the A unit induced WD and WA properties, respectively. The WD-WA structure of PDTFBT effectively broadened the bandgap compared to typical D-A structures, and the S-F and S-O dipole-dipole interactions induces a highly planar backbone structure with excellent π-π stacking in the vertical direction. In OPDs, conformationally less disordered PDTFBT polymer retained the constant responsivity and significantly improved the detectivity of PDTFBT:PC₇₁BM devices even with a thick active layer of 470 nm, contrary to the variation in the responsivity of P3HT:PC₆₁BM devices depending on the thickness. In OSCs, the deep HOMO energy level (−5.57 eV) of PDTFBT led to high Voc of 0.92 V in PDTFBT:PC₇₁BM devices, which was 0.3 eV higher than that of P3HT:PC₆₁BM devices (0.62 V), resulting in 1.8-fold enhanced power conversion efficiency. We demonstrated that the WD-WA structure with S-F and S-O interactions is highly promising strategy to make wide bandgap polymers for organic photodetectors and for the bottom cell of tandem architecture.     

Characterization of Si-added aluminum oxide (AlSiO) films for power devices

Synthesis of Si-added aluminum oxide (AlSiO) films is attempted as an insulating film with both a wide bandgap and a high dielectric constant. Electrical characteristics of AlSiO films are investigated. Leakage current of the AlO film is suppressed by Si addition and is minimized with Si composition ratio of 12%. Capacitance versus voltage (C-V) measurements are carried out for Au/AlSiO/Si MIS structure. Both flat band shift and hysteresis of the C-V characteristics are suppressed by Si addition. A low leakage current is demonstrated for Au/AlSiO/n-SiC MIS structure.     

Crystal structure of ethene-/α-olefin copolymers with various long comonomers (C8–C26)

Ethene-/α-olefin copolymers having a wide range of comonomers between 8 and 26 carbon atoms in length were characterized by wide angle X-ray diffraction (WAXD). It was found that the crystallinities for the shorter comonomers (C₈, C₁₂) matched fairly well with the crystallinities from DSC and volumetric measurements, while for the longer comonomers (C₁₈, C₂₆) distinct differences between the three methods were found. This was explained by the presence of an additional crystalline phase of the side chains slightly deforming the amorphous peak.     

Some topological properties of folded Petersen graph

The k-dimensional folded Petersen graph, FP_k, is an iterative Cartesian product on the simple Petersen graph. As an essential component of folded Petersen cube, folded Petersen graph has many important properties. In this paper, we prove that the 3k-wide diameter and 3k-fault diameter of k-dimensional folded Petersen graph is either 2k+1 or 2k+2. Furthermore, we show that FP_k is interval monotone.     

宽禁带半导体材料技术

宽禁带半导体材料是一种新型材料,具有禁带宽度大、击穿电场高、热导率高等特点,非常适合于制作抗辐射、高频、大功率和高密度集成电子器件;利用其特有的禁带宽度,还可以制作蓝光、绿光、紫外光器件和光探测器件,能够适应更为苛刻的生存和工作环境。在宽禁带半导体材料中,具有代表性的是碳化硅(SiC)、氮化镓(GaN)、氮化铝(AlN)、金刚石以及氧化锌(ZnO),综合叙述了这些材料的特性、发展现状和趋势;并介绍了SiC、GaN、ZnO材料的应用情况和代表性器件的研究进展。