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81.
J. H. Lu Y. Y. Yang C. C. Chen C. H. Kuan H. T. Chen S. C. Lee 《Infrared Physics & Technology》2003,44(5-6):399-409
Superlattices have been demonstrated previously by our group in the design of the multicolor infrared photodetector. In general, the period number of the superlattice may be up to several dozens. In this paper, we have investigated the performance of the infrared photodetectors especially with 3, 5 and 15 periods. The detector structure contains a thick blocking barrier embedded between two superlattices with different period numbers but with the same well and barrier widths. This double-superlattice structure shows switchable spectral responses between two spectral regions by the voltage polarities. The photoresponse in each spectral region is also tunable by the magnitude of the applied voltage. The voltage-dependent behavior reveals the photoelectron relaxation and transport mechanism in the superlattice miniband. Superlattice with few periods has high electron group velocity, less relaxation effect and less collection efficiency. Therefore the superlattice with few periods may have better responsivity and narrower photoresponse range than the one with many periods. Based on the experimental results of our devices, it is observed that the superlattice with fewer periods has better detectivity, responsivity, wider range of the operational temperature, and more flexible miniband engineering than the conventional multiple quantum well infrared photodetector. 相似文献
82.
We have used the periodic quantum-mechanical method with density functional theory at the B3LYP level in order to study TiO2/Sn doped (1 1 0) surfaces and have investigated the structural, electronic and energy band properties of these oxides. Our calculated relaxation directions for TiO2 is the experimental one and is also in agreement with other theoretical results. We also observe for the doped systems relaxation of lattice positions of the atoms. Modification of Sn, O and Ti charges depend on the planes and positions of the substituted atoms. Doping can modify the Fermi levels, energy gaps as well as the localization and composition of both valence and conduction band main components. Doping can also modify the chemical, electronic and optical properties of these oxides surfaces increasing their suitability for use as gas sensors and optoelectronic devices. 相似文献
83.
量子阱红外探测器能带结构的计算 总被引:1,自引:1,他引:0
利用电子波在阱与垒的界面上的反射及干涉效应,计算了量子阱红外探测器(QWIP)的能带结构,并对其适用性进行了分析和讨论。通过与K-P模型比较发现,本方法对计算较宽势阱(阱宽大于4nm)的量子阱结构的电子态适合。在垒宽和阱宽不变条件下,用两种方法计算得到的AlGaAs/GaAs量子阱材料中Al组分x与吸收峰值波长λp的关系曲线基本相同。结果说明,在较宽的范围内,本方法对QWIP能带结构的计算是适用且简便的。 相似文献
84.
根据采油厂油井监控的需求,将油井数据采集、网络视频监控技术和无线通信技术紧密结合起来,设计规划适用于油井的远程智能监控系统。重点介绍了远程智能监控技术的系统原理、组成结构、实现方式及其实际应用效果。 相似文献
85.
R. Meyer Hilde Hardtdegen R. Carius D. Grützmacher M. Stollenwerk P. Balk A. Kux B. Meyer 《Journal of Electronic Materials》1992,21(3):293-298
This paper presents a study of the structural and optical properties of strained GaInAs/ InP multiple quantum well (MQW) structures
fabricated by LP-MOVPE. The composition of the Ga
x
In1−x
As films ranged fromx = 0.17 tox = 1.0 and was determined by sputtered neutral mass spectrometry (SNMS) on thick layers. The structures of the MQW samples
with well widths from 1.5 to 5 nm were investigated by high resolution x-ray diffraction (HR-XRD). Simulations of the diffraction
patterns showed that transition layers of approximately 2 monolayer (ML) thickness with high lattice mismatch exist at the
interfaces. Photoluminescence (PL) measurements indicate well widths of a multiple of a monolayer with local variations of
one monolayer. The PL peak energies vary smoothly with the Ga concentration. These results were confirmed by optical absorption
measurements. 相似文献
86.
The article concerns heterojunction resonant cavity-enhanced (RCE) Schottky photodiodes with GaAs in the absorption layer. The quantum efficiency and linear pulse response have thoroughly been analysed. For the first time, the response of a heterojunction photodiode has been modelled by the phenomenological model for a two-valley semiconductor. The results obtained have shown that the satellite valleys, as well as the parasitic time constant, significantly influence the response and, accordingly, have to be taken into account when analysing and optimizing RCE photodetectors. 相似文献
87.
R. Brunner R. Meisels F. Kuchar M. ElHassan J. Bird K. Ishibashi 《Physica E: Low-dimensional Systems and Nanostructures》2004,21(2-4):491
The properties of open quantum dots are examined in magneto-transport. The quantum dots are prepared from a two-dimensional electron system (2DES) in AlGaAs/GaAs by lateral gate structures. These quantum dots are open, i.e. they are still connected to the surrounding 2DES regions. The low magnetic field magnetoresistance shows peak structures. These structures can be related to semi-classical ballistic trajectories in the confining potential of a dot. The calculations of different confining potentials (abrupt “hard-wall” and parabolic “soft-wall”) are compared with the experimental results. The experiments are better described by a soft-wall potential. 相似文献
88.
89.
Prot Pakoński Gregor Tanner Karol Życzkowski 《Journal of statistical physics》2003,111(5-6):1331-1352
Any directed graph G with N vertices and J edges has an associated line-graph L(G) where the J edges form the vertices of L(G). We show that the non-zero eigenvalues of the adjacency matrices are the same for all graphs of such a family L
n
(G). We give necessary and sufficient conditions for a line-graph to be quantisable and demonstrate that the spectra of associated quantum propagators follow the predictions of random matrices under very general conditions. Line-graphs may therefore serve as models to study the semiclassical limit (of large matrix size) of a quantum dynamics on graphs with fixed classical behaviour. 相似文献
90.
GaN材料系列的研究进展 总被引:3,自引:0,他引:3
GaN及其合金作为第三代半导体材料具有一系列优异的物理和化学性质,在光电子器件,高温大功率电子器件及高频微波器件应用方面具有广阔的前景,已成为当前高科技领域的研究重点,论述了这种材料的研究历史与发展现状,物理与化学性质,薄膜的生长方法及在光学电子和微电子器件应用于方面的研究进展。 相似文献