多孔硅发光机制的分析

从量子力学的基本理论出发讨论了量子限制效应，推导出多孔硅有效禁带宽度增量并用量子限制效应和表面态及其物质在发光中作用的理论解释了ＰＳ光致发光的实验现象。     

一种新颖的半导体光放大器镀膜监控方法

本文介绍了一种在半导体光放大器镀膜过程中监测端面反射率的简单而有效的方法。理论模型的建立考虑了光放大器的漏电流和自发发射速率随载流于浓度的非线性变化，并且基于实验测量的ＰＩ（输出功率与注入电流）曲线，采用曲线拟合的方法来修正一些依赖于器件的参数，理论计算结果与有关文献的测量结果较好地吻合。     

Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(0 0 1)

The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation.     

A Criterion for Spectrum Decomposition

We obtain a necessary and sufficient condition for the decomposition of the spectrum of an arbitrary nonsymmetric potential whose least value is attained at finitely many points.     

室温脉冲螺旋Wiggler磁体和大电流脉冲电源的研究

本文研究了适用于自由电子激光的室温脉冲螺旋Ｗｉｇｇｌｅｒ磁体，对其设计构思、磁场特性和设计参数进行了分析和计算．作者在文中还研究并设计了螺旋Ｗｉｇｇｌｅｒ磁体的大电流宽脉冲供电电源；分析了脉冲电流的时间特性对产生自由电子激光的影响程度．     

Shallow hydrogen-induced donor in monocrystalline silicon and quantum wires

Electrical and optical properties of bistable shallow donors in monocrystalline silicon, which are introduced by proton implantation followed by annealing at 450 °C, have been studied. The temperature dependences of equilibrium and non-equilibrium carrier concentration and relaxation kinetics were investigated. IR absorption lines of bistable shallow donor electronic excitations were detected. The obtained experimental data demonstrate that the bistable shallow donors can be identified as quantum wire defect nanoclusters.     

带间耦合多有源区大功率980nm半导体激光器

提出利用隧道结实现带间耦合再生多有源区大光腔大功率的半导体激光器。该激光器能够在小的电流下输出大的光功率；同时可以使出光端面成倍增加，减少了端面光密度，克服端面灾变性毁坏（COD）。由于耦合形成大光腔，提高了光输出的质量。制备4个有源区带间耦合大功率980nm半导体激光器。在2A注入电流下输出功率5W，阈值电流172mA，斜率效率3.24w/a，阈值电流密度273A/cm^2。     

Tunnelling in periodically driven systems

Tunnelling in periodically driven bistable symmetric potential wells is investigated in an analytical approximation in a domain where the driving frequency is large compared to the tunnelling frequency and only the four lowest lying levels contribute significantly. The influence of finite level widths is taken into account, and a smooth variation of the amplitude of the driving field is allowed for.