Method for Preparation of Semiconductor Quantum‐Rod Lasers in a Cylindrical Microcavity

An efficient method for preparation of semiconductor quantum rod films for robust lasing in a cylindrical microcavity is reported. A capillary tube, serving as the laser cavity, is filled with a solution of nanocrystals and irradiated with a series of intense nanosecond laser pulses to produce a nanocrystal film on the capillary surface. The films exhibit intense room‐temperature lasing in whispering‐gallery modes that develop at the film–capillary interface as corroborated from the spacing detected for the lasing modes. Good lasing stability is observed at moderate pump powers. The method was applied successfully to several quantum‐rod samples of various sizes.     

量子密码技术开辟通信安全新时代

量子密码技术被认为是绝对安全的加密技术。近年来,在美国、德国、日本和中国,相关研究都取得了明显进展。2004年6月,世界上第一个量子密码通信网络在美国马萨诸塞州剑桥城正式投入运行,标志着这一技术迈上了新台阶。据相关机构估算,量子保密通信系统一旦商用,将形成高达10亿美元的市场。     

射频板条CO_2激光器并联谐振技术的研究

本文利用周期性网络模型计算了射频板条CO2激光器电极的纵向电压分布．探讨了并联谐振技术在板条器件中获得成功运用的原因．提出了利用并联谐振技术进一步提高电压分布均匀性的两个途径．     

LDD方法在提高电路工作电压中的应用研究

研究了利用轻掺杂漏结构来制作高电源电压器件的工艺方法。分析了ＬＤＤ结构参数对器件击穿特性的影响，并结合实验结果对Ｎ＾－区的注入剂量，长度及引入的串联电阻进行了优化设计。     

NMOS器件两次沟道注入杂质分布和阈电压计算

分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂地系数，给出了表面浓度与工艺参数之间的模拟关系式，以峰值浓度为强反型条件计算了开启电压，文章还给出了开启电压、氧化条件、不同注入组合之间的关系式。     

具有透明波导的量子阱半导体激光器及其光集成技术

本文论述了具有透明波导结构的量子阱半导体激光器及其光集成技术的其本原理及主要优点。尤其在实现高功率窄光束输出的光集成器件方面更显出其独特的优点。     

深亚微米MOSFET衬底电流的模拟与分析

利用器件模拟手段对深亚微米ＭＯＳＦＥＴ的衬底电流进行了研究和分析，给出了有效的道长度，栅氧厚度，源漏结深，衬底掺杂浓度以及电源电压对深亚微米ＭＯＳＦＥＴ衬底电流的影响，发现电源电压对深亚微米ＭＯＳＦＥＴ的衬底电流有着强烈的影响，热载流子效应随电源电压的降低而迅速减小，当电源电压降低到一定程度时，热载流子效应不再成为影响深亚微米ＭＯＳ电路可靠性的主要问题。     

Radiation bursts from particles in the field of compact, impenetrable, astrophysical objects

The radiation emitted by charged, scalar particles in a Schwarzschild field with maximal acceleration corrections is calculated classically and in the tree approximation of quantum field theory. In both instances the particles emit radiation that has characteristics similar to those of gamma-ray bursters.     

应力对M-Z型InP/InGaAsP-EAM偏振

采用Agilent 81910A光子全参量测试仪,首次实验研究了InP/In1－xGaxAs1－yPy-MQW（Multiple-Quantum-Well,MQW）材料与衬底间因应力而产生的M-Z型光调制器的PDL影响以及由此引起的由差分群时延(Differential Group Delay,DGD)表征的偏振模色散(Polarization Mode Dispersion,PMD).研究结果表明,半导体MQW光调制器的PDL与DGD是一致的.因此在半导体光器件的制作过程中,应尽可能地减小衬底与波导芯层之间的因残存应力的存在造成对光器件的高速性能的不利影响.     

Quantum states in fabricating poly-Si films

The quantum states are presented in these processions of fabricating poly-Si films. Amorphous silicon films prepared by PECVD has been crystallized by conventional furnace annealing (FA) and rapid thermal annealing (RTA), respectively. It is found that the thin films grain size present quantum states with the increasing of the gas flow ratios of SiH₄, H₂ mixture, substrate temperatures, frequency power, annealing temperature and time.