K8[Fe(H2O)W11MnO39]/PANI/V2O5三元复合材料的制备、表征及光催化性能研究

本文运用静电自组装法合成了一种新型三元复合材料K₈[Fe(H₂O)W₁₁MnO₃₉]/PANI/V₂O₅,并采用IR、UV、XRD、XPS、SEM、氮气吸附等方法对其进行表征;然后,以龙胆紫为有机污染物进行光催化实验,对此三元复合催化剂的降解性能进行研究。结果表明:K₈[Fe(H₂O)W₁₁MnO₃₉]/PANI/V₂O₅已被成功复合,且仍然保持Keggin结构,稳定性能良好;在pH=2,龙胆紫C初=5 mg·L^-1,此催化剂用量为5 mg的条件下,其脱色率高达93.09%。可见,此复合催化剂具有优异的研究潜力和实用价值。     

InGaAsP/InP photodetectors targeting on 1.06 μm wavelength detection

InP-based InGaAsP photodetectors targeting on 1.06 μm wavelength detection have been grown by gas source molecular beam epitaxy and demonstrated. For the detector with 200 μm mesa diameter, the dark current at 10 mV reverse bias and R₀A are 8.89 pA (2.2 × 10⁻⁸ A/cm²) and 3.9 × 10⁵ Ω cm² at room temperature. The responsivity and detectivity of the InGaAsP detector are 0.30 A/W and 1.45 × 10¹² cm Hz^1/2 W⁻¹ at 1.06 μm wavelength. Comparing to the reference In_0.53Ga_0.47As detector, the dark current of this InGaAsP detector is about 570 times lower and the detectivity is more than ten times higher, which agrees well with the theoretical estimation.     

Aryl groups,supplement of amino protecting group chemistry!

Amino group protective strategy has consequently emerged in multistep organic synthesis. Easy and selective deprotection procedures are crucial to facilitate the chemical transformation. Recently, Zhang's group from Henan Normal University collaborating with Chen's group of Nankai University developed a novel strategy for the regiospecific cleavage of inert aryl C-N bonds in N-aryl amides by hypervalent iodine(V) reagents. These procedures allow removal of sort of aryl groups under mild conditions to give primary amides in high efficiency. It bestows these aryl groups with the characteristics of amino protecting groups that might be the supplement of amino protecting group chemistry.     

Temperature accelerated life test on commercial concentrator III–V triple‐junction solar cells and reliability analysis as a function of the operating temperature

A temperature accelerated life test on commercial concentrator lattice‐matched GaInP/GaInAs/Ge triple‐junction solar cells has been carried out. The acceleration of the aging has been accomplished by subjecting the solar cells at temperatures markedly higher than the nominal working temperature inside a concentrator, and the nominal photo‐current condition (820 X) has been emulated by injecting current in darkness. Three tests at different temperatures have been carried out. The failure distributions across the three test temperatures have been fitted to an Arrhenius–Weibull model. An Arrhenius activation energy of 1.59 eV was determined from the fit. The reliability functions and parameters of these solar cells at two nominal working conditions (80 and 100 °C) have been obtained. In both cases, the instantaneous failure rate function monotonically increases, that is, the failures are of the wear‐out kind. We have also observed that the reliability data are very sensitive to the nominal temperature condition. In fact, at a nominal working condition of 820 X and 80 °C, assuming that the concentration module works 5 h per day, the warranty time obtained for a failure population of 5% has been 113 years. However, for a nominal working condition of 820 X and 100 °C, the warranty time obtained for a failure population of 5% has been 7 years. Therefore, in order to offer a long‐term warranty, the working temperature could be a key factor in the design of the concentration photovoltaic systems. Copyright © 2014 John Wiley & Sons, Ltd.     

Chemical depth profiling and 3D reconstruction of III–V heterostructures selectively grown on non‐planar Si substrates by MOCVD

The chemical characterization of novel 3D architectures with nanometre‐scale dimensions is extremely challenging. The chemical composition of InGaAs/AlAs quantum wells selectively grown in SiO₂ trenches, 100–300 nm wide, is studied. Combining high lateral resolution 3D ToF‐SIMS analysis and Auger measurements, the chemical composition of individual trenches was obtained confirming the uniformity of these III–V heterostructures. These results correlate well with an average approach using SIMS depth profiling. The effects of ion beam orientation on the surface topography of confined structures were highlighted. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Investigation of the electrical and optical properties of InAs/InGaAs dot in a well solar cell

The electroreflectance (ER) and current–voltage (J–V) of InAs/InGaAs dots in a well (DWELL) solar cell (SC) were measured to examine the optical and electrical properties. To investigate the carrier capturing and escaping effects in the quantum dot (QD) states the above and below optical biases of the GaAs band gap were used. In the reverse bias region of the J–V curve, the tunneling effect in the QD states was observed at low temperature. The ideality factors (n) were calculated from the J–V curves taken from various optical bias intensities (I_ex). The changes in the ideality factor (n) and short circuit current (J_SC) were attributed mainly to carrier capture at low temperature, whereas the carrier escaping effect was dominant at room temperature. ER measurements revealed a decrease in the junction electric field (F_J) due to the photovoltaic effect, which was independent of the optical bias source at the same temperature. At low temperature, the reduction of photovoltaic effect could be explained by the enhancement carrier capturing effect due to the strong carrier confinement in QDs.     

Catalytic and kinetic spectrophotometric method for determination of vanadium(V) by 2,3,4-trihydroxyacetophenonephenylhydrazone

A new catalytic and kinetic spectrophotometric method for the determination of vanadium(V) was studied using 2,3,4-trihydroxyacetophenonephenylhydrazone (THAPPH) as an analytical reagent. The present method was developed on the catalytic effect of vanadium on oxidation of THAPPH by hydrogen peroxide in hydrochloric acid–potassium chloride buffer (pH = 2.8) at the 20th minute. The metal ion has formed 1:2 (M:L) complex with THAPPH. Beer’s law was obeyed in the range 20–120 ng/mL of V(V) at λ_max 390 nm. The sensitivity of the method was calculated in terms of molar absorptivity (1.999 × 10⁵ L mol⁻¹cm⁻¹) and Sandell’s sensitivity (0.000254 μg cm⁻²), shows that this method is more sensitive. The standard deviation (0.0022), relative standard deviation (0.56%), confidence limit (±0.0015) and standard error (0.0007) revealed that the developed method has more precision and accuracy. The stability constant was calculated with the help of Asmu’s (9.411 × 10⁻¹¹) and Edmond’s & Birnbaum’s (9.504 × 10⁻¹¹) methods at room temperature. The interfering effect of various cations and anions was also studied. The present method was successfully applied for the determination of vanadium(V) in environmental and alloy samples. The method’s validity was checked by comparing the results obtained with atomic-absorption spectrophotometry and also by evaluation of results using F-test.     

H6PMo9V3O40/SiO2催化剂催化酚类化合物选择性硝化

为创建洁净高效的酚类化合物硝化工艺,以杂多酸H6PMo9V3O40(PMAV3)为活性组分,硅胶为载体,浸渍法制备了负载型催化剂PMAV3/SiO2,采用红外光谱、X射线衍射谱、N2吸附-脱附法及TG-DSC分析等测试技术对该催化剂的结构及热稳定性进行了表征;考察了该催化剂对多种酚类化合物硝化反应的催化性能。结果显示,该催化剂对多种酚类化合物的硝化反应具有很强的催化活性和区域选择性,产率为83.7%~94.5%,其中苯酚、邻甲酚、邻氯苯酚和邻氟苯酚以邻位硝化产物居多,水杨酸的对位硝化产物占绝对优势;负载催化剂的织构性质与载体相近,但随负载量增加,比表面积逐渐降低;PMAV3/SiO2的热稳定性好于本体PMAV3。催化剂回收容易,重复使用5次,活性基本不变。