金催化化学发光新体系——苯并吡喃化学发光分析法测定金矿中的痕量金

本文提出了一种测定矿样中痕量金的化学发光分析法,氯化6,7-二羟基-2,4-二甲基苯并吡喃-H_2O_2化学发光体系,方法的检出限为7ppb。工作曲线线性范围是10～1000ppbAu,测定的相对标准偏差小于7％。应用本法测定矿样中的金,结果良好。     

通讯网的演进

在光纤高速传输技术、光交换与智能光网等与宽带接入、多媒体、3G等网络应用技术的推动下，建设基于IPv6协议的IP基础电信网成为可能。现在IP网正在朝着有序的、可管理的、有QoS保障的、可以支持各类业务的综合业务基础网演进。电信网也正在从网络接入层上、从长途网络层面上、从本地网络层面上、从固定网向含3G在内的移动网络等方面向支持IP技术及其综合业务的方面全面推进。     

NMR study of products of thermal transformation of substituted N-aryl-o-quinoneimines

Products of thermal transformation of substituted N-aryl-o-quinoneimines were studied using NMR spectroscopy. The formation of 4aH-phenoxazine, which was further dimerized by the Diels—Alder reaction, was established.     

Syntheses and characterization of 16‐arm star and star diblock copolymer and AB8 9‐miktoarm star copolymer via NMRP and ROP from dendritic multifunctional macroinitiators

A dendritic macroinitiator having 16 TEMPO‐based alkoxyamines, Star‐16 , was prepared by the reaction of a dendritic macroinitiator having eight TEMPO‐based alkoxyamines, [G‐3]‐OH , with 4,4′‐bis(chlorocarbonyl)biphenyl. The nitroxide‐mediated radical polymerization (NMRP) of styrene (St) from Star‐16 gave 16‐arm star polymers with PDI of 1.19–1.47, and NMPR of 4‐vinylpyridine from the 16‐arm star polymer gave 16‐arm star diblock copolymers with PDI of 1.30–1.43. The ring‐opening polymerization of ε‐caprolactone from [G‐3]‐OH and the subsequent NMRP of St gave AB₈ 9‐miktoarm star copolymers with PDI of 1.30–1.38. The benzyl ether linkages of the 16‐arm star polymers and the AB₈ 9‐miktoarm star copolymers were cleaved by treating with Me₃SiI, and the resultant poly(St) arms were investigated by size exclusion chromatography (SEC). The SEC results showed PDIs of 1.23–1.28 and 1.18–1.22 for the star polymers and miktoarm stars copolymers, respectively, showing that they have well‐controlled poly(St) arms. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 1159–1169, 2007.     

光辅助超高真空CVD系统制备SiGe异质结双极晶体管研究

介绍了采用紫外光化学汽相淀积(UVCVD)、超高真空化学汽相淀积(UHVCVD)和超低压化学汽相淀积(ULPCVD)技术研制的化学汽相淀积(CVD)工艺系统,简称U³CVD系统.应用该系统,在450℃低温和10^-7Pa超高真空环境下研制出了硅锗(SiGe)材料和硅锗异质结双极晶体管(SiGe HBT)材料.实验表明,该系统制备的SiGe HBT材料性能良好.