Voltage reference architectures for low-supply-voltage low-power applications

This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm² and 0.08 mm², respectively.     

Elongating the area of plasma/fluid interaction of surface nanosecond pulsed discharges

Plasma-assisted flow control is of high industrial interest, but practical applications at full scale require a large surface of interaction. Nanosecond pulsed Dielectric Barrier Discharge (DBD) have demonstrated promising results of flow control, but their interacting region is limited to only a few cm². In this paper, the conditions to extend a surface nanosecond DBD are documented. It is shown that a sliding discharge regime can fully fill an inter-electrode distance of 40 mm. This discharge regime promotes the formation of two hemispheric pressure waves originating from both air-exposed electrodes while an horizontal region of pressure gradient is also observed.     

Assembling hydrodynamic cloaks to conceal complex objects from drag

Transformation hydrodynamics and the corresponding metamaterials have been proposed as a means to exclude the drag force acting on an object. Here, we report a strategy to deploy the hydrodynamic cloaks in a more practical manner by assembling different-shaped cloaking parts. Our strategy is to first model a square-shaped cloak and a carpet cloak and then combine them to conceal a more complex-shaped space in the three-dimensional hydrodynamic flow. With the derivation of transformation hydrodynamics, the coordinate transformations for each hydrodynamic cloaking are demonstrated with the calculated viscosity tensors. The pressure and velocity fields of the square, triangular (carpet), and exemplary three-dimensional house-shaped cloaks are numerically simulated, thus showing a cloaking effect and reduced drag. This study suggests an efficient way of cloaking complex architectures from fluid-dynamic forces.     

Fused vs. spiro: Kinetic,not thermodynamic preference may direct the reaction of α-carbonyl oxonium ylides

Rh(II)-catalyzed decomposition of certain cyclic α-diazocarbonyl compounds in the presence of cyclic ethers has been shown to give bicyclic ring expansion products. These are thought to arise from a [1,4]-alkyl shift toward the carbonyl oxygen atom and are in contrast with the recently observed spirocyclic products of a Stevens-type [1,2]-alkyl shift within the postulated oxonium ylide intermediate. Quantum chemical calculations performed at the B3LYP/6-31G* level of theory showed that the former reaction pathway (toward fused bicycles) is kinetically preferred.     

Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.     

多带OFDM-UWB系统峰均功率比降低方法研究

针对多带OFDM—UWB信号存在高峰均功率比的问题，提出了利用扩展与交织降低系统信号峰均功率比的方法。该方法通过对传输数据进行正交扩展与交织，使得进入多载波调制的数据趋于高斯分布，减小了传输数据自相关函数的旁瓣峰值，降低了OFDM-UWB信号的峰均功率比。由于采用正交矩阵进行扩展，扩展前后的数据传输速率保持不变。仿真结果表明，扩展与交织可以有效地降低信号峰均功率比2-5dB左右。同时该方法还具有抗窄带干扰的鲁棒性。     

低插损窄带型10.7MHz压电陶瓷滤波器的研制

介绍了低插损窄带型10.7 MHz压电陶瓷滤波器的一种设计制作方法。结合压电陶瓷能陷模理论,通过对滤波器分割电极设计和制造工艺控制技术的研究,强调了工艺控制的重要性。产品达到日本村田同类产品水平,对国产化窄带型10.7 MHz压电陶瓷滤波器的研发和生产具有十分重要的意义。认为选用高Qm值压电陶瓷材料、分割电极和耦合电容的设计、焊接和点蜡工艺的控制等是研制低插损窄带型10.7 MHz压电陶瓷滤波器的重点。     

掺镱双包层高功率光纤激光器输出特性研究

对线形腔掺镱双包层高功率光纤激光器的输出特性进行了研究 ,通过求解速率方程 ,得到了激光器泵浦阈值功率、输出光功率和斜率效率的表达式。分析了光纤长度、腔镜反射率和泵浦波长等因素对激光器阈值功率、输出光功率和斜率效率的影响 ,为高功率光纤激光器的优化设计提供了理论依据     

计量用脉冲Nd：YAG倍频激光器及其电源

介绍了脉冲Nd:YAG倍频激光器双波长（1064／532nm）3种输出的激光光路。1064nm输出的动静比可达0.40；KTP晶体外腔倍频效率可达0.50。介绍了稳定可靠的调Q电路、逻辑控制电路和开关电源的主电路及其参数计算。     

Unidirectional Quantum Remote Control:Teleportation of Control-State

We investigate the problem of teleportation of unitary operations by unidirectional control-state telepor-tation and propose a scheme called unidirectional quantum remote control. The scheme is based on the isomorphismbetween operation and state. It allows us to store a unitary operation in a control state, thereby teleportation of theunitary operation can be implemented by unidirectional teleportation of the control-state. We find that the probabilityof success for implementing an arbitrary unitary operation on arbitrary M-qubit state by unidirectional control-stateteleportation is 4-M, and 2M ebits and 4M cbits are consumed in each teleportation.