Tunneling Current in Polycrystalline Organic Thin‐Film Transistors

Several recent papers have demonstrated that charge‐carrier mobility in organic field‐effect transistors made of vacuum‐evaporated films may become temperature‐independent at low temperature. To account for this behavior, we developed a model based on the polycrystalline nature of these films, where charge transport is mostly limited by grain boundaries. The free‐carrier density in the intergrain regions is controlled by traps, which leads to the formation of back‐to‐back Schottky barriers at each side of the grain boundaries. The height and width of these barriers is estimated from solving Poisson’s equation using the graded‐channel approximation. It is shown that in most cases the barrier width is negligibly small as compared to the physical size of the grain boundaries. In the high‐temperature regime, the conducting channel can be simply described by grains and grain boundaries connected in series, so that the overall resistance reduces to that of the grain boundaries. At low temperatures, tunneling through the barrier becomes predominant, leading to temperature‐independent mobility. A complete two‐dimensional model for charge tunneling through the barriers is developed. A quantitative check of the model is made by least‐squares fitting of the gate voltage‐dependent current measured on an octithiophene transistor at low temperature, which gives a reasonable determination of the trap density and size of the grain boundaries.     

Semiconducting Polymers Based on Simple Electron-Deficient Cyanated trans-1,3-Butadienes for Organic Field-Effect Transistors

Developing high-performance but low-cost n-type polymers remains a significant challenge in the commercialization of organic field-effect transistors (OFETs). To achieve this objective, it is essential to design the key electron-deficient units with simple structures and facile preparation processes, which can facilitate the production of low-cost n-type polymers. Herein, by sequentially introducing fluorine and cyano functionalities onto trans-1,3-butadiene, we developed a series of structurally simple but highly electron-deficient building blocks, namely 1,4-dicyano-butadiene ( CNDE ), 3-fluoro-1,4-dicyano-butadiene ( CNFDE ), and 2,3-difluoro-1,4-dicyano-butadiene ( CNDFDE ), featuring a highly coplanar backbone and deep-positioned lowest unoccupied molecular orbital (LUMO) energy levels (−3.03–4.33 eV), which render them highly attractive for developing n-type semiconducting polymers. Notably, all these electron-deficient units can be easily accessed by a two-step high-yield synthetic procedure from low-cost raw materials, thus rendering them highly promising candidates for commercial applications. Upon polymerization with diketopyrrolopyrrole ( DPP ), three copolymers were developed that demonstrated unipolar n-type transport characteristics in OFETs with the highest electron mobility of >1 cm² V⁻¹ s⁻¹. Hence, CNDE , CNFDE , and CNDFDE represent a class of novel, simple, and efficient electron-deficient units for constructing low-cost n-type polymers, thereby providing valuable insight for OFET applications.     

The Influence of Regiochemistry on the Performance of Organic Mixed Ionic and Electronic Conductors

Thiophenes functionalised in the 3-position are ubiquitous building blocks for the design and synthesis of organic semiconductors. Their non-centrosymmetric nature has long been used as a powerful synthetic design tool exemplified by the vastly different properties of regiorandom and regioregular poly(3-hexylthiophene) owing to the repulsive head-to-head interactions between neighbouring side chains in the regiorandom polymer. The renewed interest in highly electron-rich 3-alkoxythiophene based polymers for bioelectronic applications opens up new considerations around the regiochemistry of these systems as both the head-to-tail and head-to-head couplings adopt near-planar conformations due to attractive intramolecular S−O interactions. To understand how this increased flexibility in the molecular design can be used advantageously, we explore in detail the geometrical and electronic effects that influence the optical, electrochemical, structural, and electrical properties of a series of six polythiophene derivatives with varying regiochemistry and comonomer composition. We show how the interplay between conformational disorder, backbone coplanarity and polaron distribution affects the mixed ionic-electronic conduction. Ultimately, we use these findings to identify a new conformationally restricted polythiophene derivative for p-type accumulation-mode organic electrochemical transistor applications with performance on par with state-of-the-art mixed conductors evidenced by a μC* product of 267 F V⁻¹ cm⁻¹ s⁻¹.     

Electron-Deficient Benzo[de]isoquinolino[1,8-gh]quinoline Diamide π-Electron Systems

Synthetically versatile electron-deficient π-electron systems are urgently needed for organic electronics, yet their design and synthesis are challenging due to the low reactivity from large electron affinities. In this work, we report a benzo[de]isoquinolino[1,8-gh]quinoline diamide (BQQDA) π-electron system. The electron-rich condensed amide as opposed to the generally-employed imide provides a suitable electronic feature for chemical versatility to tailor the BQQDA π-electron system for various electronic applications. We demonstrate an effective synthetic method to furnish the target BQQDA parent structure, and highly selective functionalization can be performed on bay positions of the π-skeleton. In addition, thionation of BQQDA can be accomplished under mild conditions. Fine-tuning of fundamental properties and supramolecular packing motifs are achieved via chemical modifications, and the cyanated BQQDA organic semiconductor demonstrates a high air-stable electron-carrier mobility.     

Long-range ordering of composites for organic electronics: TIPS-pentacene single crystals with incorporated nano-fibers

Fluorescent nanofibers are incorporated into high-mobility single-crystals without substantially disrupting crystalline lattice, demonstrating a strategy to multifunctionalize semiconducting single-crystals.     

High‐Performance Air‐Stable n‐Type Organic Transistors Based on Core‐Chlorinated Naphthalene Tetracarboxylic Diimides

Core‐chlorinated naphthalene tetracarboxylic diimides (NDIs) with fluoroalkyl chains are synthesized and employed for n‐channel organic thin‐film transistors (OTFTs). Structural analyses of the single crystals and thin films are performed and their charge‐transport behavior is investigated in terms of structure–property relationships. NDIs with two chlorine substituents are shown to exhibit a herringbone structure with a very close π‐plane distance (3.3–3.4 Å), a large π‐stack overlap (slipping angle ca. 62°), and high crystal densities (2.046–2.091 g cm^?3). These features result in excellent field‐effect mobilities of up to 1.43 cm² V^?1 s^?1 with minimal hysteresis and high on–off ratios (ca. 10⁷) in air. This is similar to the highest n‐channel mobilities in air reported so far. Despite the repulsive interactions of bulky Cl substituents, tetrachlorinated NDIs adopt a slip‐stacked face‐to‐face packing with an interplanar distance of around 3.4 Å, resulting in a high mobility (up to 0.44 cm² V^?1 s^?1). The air‐stability of dichlorinated NDIs is superior to that of tetrachlorinated NDIs, despite of their higher LUMO levels. This is closely related to the denser packing of the fluorocarbon chains of dichlorinated NDIs, which serves as a kinetic barrier to the diffusion of ambient oxidants. Interestingly, these NDIs show an optimal performance either on bare SiO₂ or on octadecyltrimethoxysilane (OTS)‐treated SiO₂, depending on the carbon number of the fluoroalkyl chains. Their synthetic simplicity and processing versatility combined with their high performance make these semiconductors highly promising for practical applications in flexible electronics.     

Organic Field‐Effect Devices as Tool to Characterize the Bipolar Transport in Polymer‐Fullerene Blends: The Case of P3HT‐PCBM

In organic bulk heterojunction solar cells (oBHJ) the blend morphology in combination with the charge transport properties of the individual components controls the extracted photocurrent. The organic field‐effect transistor (OFET) has been proved as a powerful instrument to evaluate the unipolar carrier transport properties in a wide range of cases. In our work we extend the OFET concept to the evaluation of the bipolar transport properties in polymer‐fullerenes blends and propose a method to improve the accuracy of the evaluation. The method is based on capacitance–voltage (C–V) measurements on MOS structures prepared on the same blends and delivers complementary information on the bulk heterojunction to the one obtained with FETs. The relevance for photovoltaic applications is investigated through the correlation between the current–voltage behavior of solar cells and the bipolar mobility for composites with varying polymer molecular weight and processed from different solvents. In particular the transport features of solar cells produced from o‐Xylene (oX), a non chlorinated solvent more suitable to production requirements, have been compared to the one of devices cast from Chlorobenzene (CB) solution. For the P3HT‐PCBM blend a consistent correlation between the mobility and the electrical fill factor and power performance was found. A significant asymmetry in the bipolar carrier mobility, together with low electron mobility dependent on the M_w value, affects the performances of thick o‐Xylene cast devices. In the case of devices processed from Chlorobenzene the slower carrier has higher mobility and the small electrical losses detected are eventually more related to the formation of space‐charge and eventually to surface recombination. This results in an efficient charge collection that is almost thickness independent. We report a dependence of the slow‐carrier type (electrons or holes) and their mobility on the specific combination of molecular weight and solvent. The mobility data and the solar cell performance coherently fit to the prediction of a device model only based on the drift of carriers under the built‐in electric field originated in the donor‐acceptor oBHJ.     

基于高迁移率微晶硅的薄膜晶体管

近年来,微晶硅(μc-Si:H)被认为是一种制作 TFT 的有前景的材料.采用PECVD法,在低于200℃时制作了微晶硅TFTs,其制作条件类似于非晶态 TFTs.微晶硅 TFTs 器件的迁移率超过了 30 cm2/Vs,而阈值电压是 2.5 V.在长沟道器件(50～200 μm)中观测到了这种高迁移率.但对于短沟道器件(2 μm),迁移率就降低到了7 cm2/Vs.此外,该 TFTs 的阈值电压随着沟道长度的减少而增大.文章采用了一种简单模型解释了迁移率、阈值电压随着沟道长度的缩短而分别减少、增加的原因在于源漏接触电阻的影响.     

基于表面势的多晶硅薄膜晶体管的栅电容模型

显式地推导多晶硅薄膜晶体管(Polysilicon thin-film transistors,poly-SiTFT)表面势隐含方程的近似解,该求解法非迭代的计算大大地提高了计算效率,且精确度非常高,与数值迭代结果比较,绝对误差范围只在纳伏数量级。利用求得的表面势,建立了一个poly-SiTFT栅电容模型,该电容电压模型能连续、准确地描述poly-SiTFT在线性区和饱和区的动态特性,同时该模型考虑了kink效应、沟道长度调制效应和寄生电容等。对实验数据进行拟合发现,提出的模型与实验数据符合得较好,能准确地预测poly-SiTFT的栅电容特性。     

An Amorphous n-Type Conjugated Polymer with an Ultra-Rigid Planar Backbone

High charge carrier mobility polymer semiconductors are always semi-crystalline. Amorphous conjugated polymers represent another kind of polymer semiconductors with different charge transporting mechanism. Here we report the first near-amorphous n-type conjugated polymer with decent electron mobility, which features a remarkably rigid, straight and planar polymer backbone. The molecular design strategy is to copolymerize two fused-ring building blocks which are both electron-accepting, centrosymmetrical and planar. The polymer is the alternating copolymer of double B←N bridged bipyridine (BNBP) unit and benzobisthiazole (BBTz) unit. It shows a decent electron mobility of 0.34 cm² V⁻¹ s⁻¹ in organic field-effect transistors. The excellent electron transporting property of the polymer is possibly due to the ultrahigh backbone stiffness, small π-π stacking distance, and high molecular weight.