Negative compressibility property in hinging open-cell Kelvin structure

A new three-dimensional(3 D) cellular model based on hinging open-cell Kelvin structure is proposed for its negative compressibility property. It is shown that this model has adjustable compressibility and does exhibit negative compressibility for some certain conformations. And further study shows that the images of compressibility are symmetrical about the certain lines, which indicates that the mechanical properties of the model in the three axial directions are interchangeable and the model itself has a certain geometric symmetry. A comparison of the Kelvin model with its anisotropic form with the dodecahedron model shows that the Kelvin model has stronger negative compressibility property in all three directions.Therefore, a new and potential method to improve negative compressibility property can be derived by selecting the system type with lower symmetry and increasing the number of geometric parameters.     

Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

光纤布拉格光栅的无源温度补偿

分析了通过施加应变补偿光纤布拉格光栅(FBG)中心波长随温度漂移的原理，给出了一种新型的无源温度补偿的方法和相应的实验结果。该方法采用了两种不同热膨胀系数的金属，对光栅先施加预应变。在0-60℃范围内，中心波长仅偏移了0．02nm。     

压电驱动器迟滞特性的Preisach模型研究

压电驱动器的迟滞特性是影响其位移输出精度的主要因素。该文采用改进的Preisach模型对压电驱动器的迟滞特性进行建模，并进行了相应的实验研究。实验结果表明该模型可以很好地预测压电驱动器在经过一定的控制电压序列以后的位移输出值．能够有效地降低迟滞特性对压电驱动器位移输出精度的影响。     

用CPLD实现SRAM工艺FPGA的安全应用

提出了一种利用CPLD产生的伪随机码来加密SRAM工艺FPGA的方法,并详细介绍了具体的电路和VHDL代码。     

半导体传感器在生物分析科学中的应用(英文)

回顾了半导体生化传感器 (ISFET 和 LA PS)在医学监测、免疫检测、免疫分析、D N A 杂交以及细胞培养等方面应用的进展。为使半导体器件适用于生化检测,对其中所采用的检测手段和取得的研究结果进行了分析。展望了通过与微流体网络相结合,基于半导体传感器的实验室芯片化的可行性。     

基于MFSK的多载波水声通信系统及实验研究

本文在深入研究水声通信信道特性及多载波关键技术的基础上,设计并研制了基于M FSK的高速自适应多载波水声通信系统,并进行了湖上实验。理论分析、仿真及湖上试验结果表明:基于M FSK的多载波水声通信系统,多径抑制有效,对同步的精确度要求不高,性能稳健,更适合于恶劣水声通信环境下、中距离(10~30km)较高数据率多载波通信系统,易于工程实现,具有良好的应用前景。     

Effective Location Based Services with Dynamic Data Management in Mobile Environments

With the proliferation of mobile computing technologies, location based services have been identified as one of the most promising target application. We classify mobile information service domains based on feature characteristics of the information sources and different patterns of mobile information access. By carefully examining the service requirements, we identify the dynamic data management problem that must be addressed for effective location based services in mobile environments. We then devise a general architecture and cost model for servicing both location independent and location dependent data. Based on the architecture and cost model, we propose a set of dynamic data management strategies that employs judicious caching, proactive server pushing and neighborhood replication to reduce service cost and improve response time under changing user mobility and access patterns. Detail behavior analysis helps us in precisely capturing when and how to apply these strategies. Simulation results suggest that different strategies are effective for different types of data in response to different patterns of movement and information access. Shiow-yang Wu is an associate professor of the Department of Computer Science and Information Engineering at National Dong Hwa University, Hualien, Taiwan, R.O.C. He received the BS and MS degrees in computer engineering from National Chiao Tung University, Hsinchu, Taiwan, ROC, and the PhD degree in computer science from the University of Texas at Austin in 1984, 1986, and 1995, respectively. His research interests include data/knowledge bases, mobile computing, distributed processing, intelligence information systems, and electronic commerce. Kun-Ta Wu was born in Taipei, Taiwan, R.O.C., in 1976. He received the B.S. degree in computer science from Soochow University, Taipei, Taiwan, R.O.C., in 1999 and the M.S. degree in computer science and information engineering from National Dong Hwa University, Hualien, Taiwan, R.O.C., in 2001. Currently, he is an Assistant Researcher in the Domestic Division at Science and Technology Information Center, National Science Council, R.O.C., as a member of Information Gathering and Analysis Group of National Information and Communication Security Taskforce. His research interests include mobile computing, wireless network and information security.     

基于两层均匀媒质的GPEN SAR地下目标成像方法及其性能分析

地表穿透合成孔径雷达(Ground PENetration SAR,GPEN SAR)为了探测掩埋在地下的目标,通常工作在多层媒质的环境中。传统成像模型是建立在同一均匀媒质的假设上,不再适合于GPEN SAR的实际情况。本文首先建立了两层分区均匀媒质中的成像模型,然后利用后向投影(BP)算法定量分析了成像几何参数、土壤参数等对成像的影响,进而提出了一种修正的后向投影(MBP)算法。MBP算法不仅能够校正两层分区均匀媒质对成像定位的影响,还能估计目标的掩埋深度,提供目标三维位置坐标。仿真结果验证了MBP算法在不同信噪比环境下,对多目标的三维定位精度能满足实际的需要。