980 nm激发下Er3+/Yb3+共掺杂ZrO2-Al2O3粉末的上转换发光特性

通过固相反应法制备了Er3+/Yb3+共掺杂ZrO2-Al2O3粉末的样品,并对样品在980nm激光激发下的上转换发光特性进行了研究.从发射光谱可以发现,在可见光范围内有3个强的发光带,一个位于654nm附近的红光带和两个分别位于545nm、525nm附近的绿光带,分别对应于Er3+离子的以下辐射跃迁:4F9/2→4I15/2、4S3/2→4I15/2、2H11/2→4I15/2.其中又以Er3+离子的4F9/2→4I15/2跃迁产生的红色荧光辐射最强.对其上转换发光机制进行了分析,发现这三个发光过程都是双光子过程.对样品粉末进行了XRD检测,发现ZrO2主要以立方相为主,并且计算得到了这种立方结构的晶格常数.Al2O3固溶于ZrO2中,Al3+嵌入ZrO2后产生氧空位,导致ZrO2晶体的对称性降低,这种结构变化更有利于提高上转换效率,即上转换发光强度增强.     

B_2分子X~3Σ_g~-和A~3Σ_u~-态的势能函数

使用SAC/SAC-CI方法,利用D95(d),6-311g**以及cc-PVTZ等基组,对B2分子的基态(X3Σg-)和第一激发态(A3Σu-)的平衡结构和谐振频率进行了优化计算.通过对3个基组的计算结果的比较,得出了D95(d)基组为3个基组中的最优基组的结论;使用D95(d)基组,利用SAC的GSUM(Group Sum of Operators)方法对基态(X3Σg-),SAC-CI的GSUM方法对激发态(A3Σu-)进行单点能扫描计算,用正规方程组拟合Murrell-Sorbie函数,得到了相应电子态的完整势能函数;从得到的势能函数计算了与基态(X3Σg-)和第一激发态(A3Σu-)相对应的光谱常数(Be,αe,ωe和ωeχe),结果与实验数据吻合.     

The AB2-XA1 electronic transition of NO2: A rovibronic survey covering 14 300-18 000 cm

More than 250 rotationally resolved vibrational bands of the A²B₂-X²A₁ electronic transition of ¹⁵NO₂ have been observed in the 14 300-18 000 cm⁻¹ range. The bands have been recorded in a recently constructed setup designed for high resolution spectroscopy of jet cooled molecules by combining time gated fluorescence spectroscopy and molecular beam techniques. The majority of the observed bands has been rotationally assigned and can be identified as transitions starting from the vibrational ground state or from vibrationally excited (hot band) states. An exceptionally strong band is located at 14 851 cm⁻¹ and studied in more detail as a typical benchmark transition to monitor ¹⁵NO₂ in atmospheric remote sensing experiments. Standard rotational fit routines provide band origins, rotational and spin rotation constants. A subset of 177 vibronic levels of ²B₂ vibronic symmetry has been analyzed in the energy range between 14 300 and 17 250 cm⁻¹, in terms of integrated density and using Next Neighbor Distribution. It is found that the overall statistical properties and polyad structure of ¹⁵NO₂ are comparable to those of ¹⁴NO₂ but that the internal structures of the polyads are completely different. This is a direct consequence of the X²A₁-A²B₂ vibronic mixing.     

Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH₄/SiF₄ mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH₄ and SiF₄ radicals show that the SiH₄ radicals are important in the nucleation and growth of grains. However, SiF₄ radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF₄ in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.     

The microstructure of Cu films deposited by the self-ion assisted technique

The microstructures of Cu films deposited by the self-ion assisted, partially ionized beam (PIB) deposition technique under two different accelerating potentials, 0 KeV and 6 KeV, are compared. The 6 KeV film shows a bimodal (111) fiber and (100) fiber texture with an abundance of twin boundaries and a relatively large average grain size with a typical lognormal distribution. The 0 KeV film consists of small, mostly (111) oriented grains with islands of abnormally large (100) grains. The controlling factors for the abnormal growth of the (100) grains are discussed in relation to the observed microstructures, showing that all factors necessary for abnormal (100) growth are present in the films.     

Solid-phase epitaxy of CaSi2 on Si(1 1 1) and the Schottky-barrier height of CaSi2/Si(1 1 1)

Thin Ca films were evaporated on Si(1 1 1) under UHV conditions and subsequently annealed in the temperature range 200–650 °C. The interdiffusion of Ca and Si was examined by ex situ Auger depth profiling. In situ monitoring of the Si 2p core-level shift by X-ray photoemission spectroscopy (XPS) was employed to study the silicide formation process. The formation temperature of CaSi₂ films on Si(1 1 1) was found to be about 350 °C. Epitaxial growth takes place at T≥400 °C. The morphology of the films, measured by atomic force microscopy (AFM), was correlated with their crystallinity as analyzed by X-ray diffraction (XRD). According to measurements of temperature-dependent I–V characteristics and internal photoemission the Schottky-barrier height of CaSi₂ on Si(1 1 1) amounts to qΦ_Bn=0.25 eV on n-type and to qΦ_Bp=0.82 eV on p-type silicon.     

2Mbit/s高速信令链路在移动通信七号信令网中的应用

通过对2Mbit/s高速信令链路原理、特点的介绍，阐明了该技术在现阶段使用的实际意义，并给出了2Mbit/s高速信令链路在移动通信七号信令网中的应用。     

HgCl2/I2复合催化剂协同催化合成异丙醇钇的研究

以金属钇和异丙醇为原料，以HgCl2/I2为复合催化剂，通过对金属钇的机械加工以增加其比表面，并将异丙醇脱水使其含水量降低至0．05％，体系在82℃回流5h，经过滤、减压蒸馏，得到了白色海绵状异丙醇钇，其产率高达83％，合成时间比文献报道的缩短了19h，产率提高了8％。文章确定了催化剂的最佳用量为20gY加入60mg HgCl2/I2，研究了合成产率与HgCl2/I2催化剂和HgCl2催化剂的依赖关系及异丙醇中含水量对合成产率的影响，并对HgCl2/I2的催化作用机理进行了初步探讨。     

SEPARATING SCN~- FROM DESULPHURIZATION WASTE SOLUTION OF COCKING PLANT BY D241 RESIN

1. INTRODUCTION In the process of coking plant, about 30%~35% sulfur is transformed to H2S and some other sulfide, which form impurity in coal gas together with NH3 and HCN. Only 0.1% H2S containing in air can lead to die, so it is very important to carry on desulphurization and decyanation with coal gas [1~3]. Currently desulphurization and decyanation craft technique have Dry Oxidation Technology, Wet Oxidation Technology and Liquid Absorption Technology [2] three main kinds. The…     

A study of structural, compositional and optical properties of spray-deposited non-stoichiometric (Zn,Fe)S thin films

Non-stoichiometric ternary chalcogenides (Zn,Fe)S were prepared in the film form by pyrolytic spray deposition technique, using air/nitrogen as the carrier gas. The precursor solution comprised of ZnCl₂, FeCl₂ and thiourea. The depositions were carried out under optimum conditions of experimental parameters viz. carrier gas (air/nitrogen) flow rate, concentration of precursor constituents, nozzle substrate distance and temperature of quartz substrate. The deposited thin films were later sintered in argon at 1073 K for 120 min.The structural, compositional and optical properties of the sintered thin films were studied. X-ray diffraction studies of the thin films indicated the presence of (Zn,Fe)S solid solution with prominent cubic sphalerite phase while surface morphology as determined by scanning electron microscopy (SEM) revealed a granular structure.The chemical composition of the resulting thin films as analyzed by energy dispersive X-ray analysis (EDAX) reflected the composition of the precursor solutions from which the depositions were carried out with Fe at% values ranging from 0.4 up to 33.SEM micrographs of thin films reveal that the grain sizes of the thin films prepared using air as carrier gas and N₂ as carrier gas are in the vicinity of 300 and 150 nm, respectively.The diffuse transmittance measurements for thin films, as a function of wavelength reveal the dependence of direct optical band gap on Fe content and type of phase.