Enhancement in age hardenability of sintered Ti–5Fe alloy by Zr addition processed by pulsed electric current sintering

The age-hardenable Ti–5Fe–5Zr (wt. %, 5Zr) alloy has been consolidated by pulsed electric current sintering, following a β solution treatment, and the results are compared with a Ti–5Fe (0Zr) alloy. The precipitation sequence measured at 640°C ageing is β?+?athermal ω?→?β?+?isothermal ω?→?β?+?α. At the peak hardness isothermal ω phase forms at 20?s of ageing. The Zr addition retards the precipitation kinetics of the α phase; as a result, the α phase nucleates at latest at 300?s ageing in the overaged state. Fe is partitioned into β, while it is depleted from the α phases. There is Zr enrichment near the α/β interface when the α phase precipitates due to a solute drag effect; the growth rate of the α phase in the 5Zr alloy is significantly reduced compared with that in the 0Zr alloy.     

Eu3+摩尔浓度对Y2O2S:Eu3+,Mg2+,Ti4+红色长余辉材料光谱的影响

用高温固相法制备了Y2O2S：Eu^3 ,Mg^2 ,Ti^4 红色长余辉材料。测量了该材料的余辉曲线,余辉时间为1h以上;由X射线衍射得到晶体结构为Y2O2S.测量了不同Eu^3 摩尔浓度下的激发光谱和发射光谱,得到从^5DJ(J=0,1,2,3)^-7FJ(J=0,1,2,3,4,5)的发射谱线,并得到位于260,345,468和540nm激发峰。由于激活剂饱和效应,Y2O2S：Eu^3 ,Mg^2 ,Ti^4 发射光谱中513．6,540．1,556．4,587．3和589．3nm属于从^5D2,^5D1到^7FJ(J=0,1,2,3,4)跃迁的发射峰随Eu^3 摩尔浓度的增加相对削弱;激发谱包括位于350nm左右属于电荷转移态吸收(Eu^3 -O^2-,Eu^3 -S^2 )的激发主峰和在可见光区位于468,520和540nm属于Eu^3 离子4f-4厂吸收的激发峰。随着Eu^3 摩尔浓度的增加,位于468,520和540nm的激发峰相对增强。     

用有效折射率／有限元法设计1．55μmTi：LiNbO_3单模条波导及其方向耦合器

应用有效折射率／有限元法（ＥＩ－ＦＥＭ），考虑到ＬｉＮｂＯ３晶体和Ｔｉ扩散的各向异性，折射率增量与寻常光、非寻常光及波长色散的关系，设计了１．５５μｍ光波长下工作的ｚ切ｙ传播Ｔｉ：ＬｉＮｂＯ３单模条波导的制备参数，计算和分析了其单模特性、模式场分布及其变化规律．扩展了ＥＩ－ＦＥＭ，将其用于求解耦合波导系统，确定了方向耦合器的耦合长度及其波长色散特性．     

低阈值飞秒钛宝石激光器的理论研究

利用数值求解的方法，从理论上系统分析了决定钛宝石激光器锁模阈值的几个关键因素. 定 量分析了腔模对克尔效应的主导作用，并将光孤子模型引入低阈值锁模理论，分析了色散与 阈值的关系. 根据理论指导在实验上完成了一台阈值低至390 mW自启动飞秒掺钛蓝宝石激光 器. 关键词： 低阈值 掺钛蓝宝石激光器 克尔透镜锁模 光孤子     

一种新化合物K2Ti8O15纳米线

钛酸钾晶须通常是直径和长度在微米量级的无机晶须 ,可用Ｋ2 Ｏ·ｎＴｉＯ2 表示其组成 ,ｎ =1,2 ,4 ,6 ,8,[1] .六钛酸钾晶须具有耐高温、耐腐蚀、纤维拉伸强度高、导热系数小、红外反射率高 ,硬度低的特点 .在民用及工业方面有很多应用 .如催化剂载体、离子吸附交换材料、高温过滤器、绝热材料、耐摩擦材料等[2～ 5] .钛酸钾纳米线的合成尚未见报道 .我们在用电弧产生的Ｎ2 等离子体热解焦油时 ,生成了一种直径 9～ 2 0ｎｍ长约几百纳米线 .Ｘ射线能谱定量分析表明这种纳米线化学组成为Ｋ2 Ｔｉ8Ｏ15,是一种新的非化学计量化合物 .试验装…     

自启动、低功率泵浦的自锁模Ti：蓝宝石激光器和它的高效连续运转

报道了一台自启动、长时间稳定、低功率泵浦的自锁模Ｔｉ：蓝宝石激光器和它的高效连续运转的实验结果．实验中观测到５３ｎｍ的光谱带宽（ＦＷＨＭ）．此谱宽可支持１３ｆｓ的激光脉冲．受自相光仪测量仪器的限制．测得的脉宽为２４．６ｆｓ．实际脉冲脉宽可能小于２０ｆｓ．此激光器在自启动锁模、低功率泵浦时．脉宽小于５０ｆｓ．激光器在连续运行时获得０．２Ｗ的泵浦阈值．３５％的斜率效率和１．１Ｗ的激光输出（４Ｗ泵浦）．     

Nd:YAG连续激光诱导下硅中钛过饱和掺杂研究

为了在硅中掺入过饱和的过渡金属杂质,采用自行设计的线形大功率Nd:YAG激光辐照表面溅射钛的硅片,对辐照后样品进行了俄歇电子能谱测试,利用2维热力学模型,对连续激光扫描的过程进行了热力学模拟。结果表明,硅中的钛掺杂浓度远高于钛在硅中的固溶度,钛的最高浓度在表面下方一定距离处;硅片中的最高温度并不在硅的表面,温度分布导致了钛的分布不在表面;模拟结果与实验结果吻合得较好。线形连续激光能够通过对材料表面扫描辐照的方式进行加工,实现过饱和掺杂。     

ICP-AES法测定钛基复合材料中的Al、Mo、B的研究

本文采用ＩＣＰ－ＡＥＳ法对钛基复合材料中的合金元素Ａｌ、Ｍｏ、Ｂ的测定进行研究,着重进行了基体元素对待测元素Ａｌ、Ｍｏ、Ｂ的干扰试验及各元素在测定浓度范围内线性相关性,进行了酸度试验,测定了钛基复合材料中上述三元素的含量,得到了较好的精密度和准确度。     

Spin gapless semiconductor like Ti2MnAl film as a new candidate for spintronics application

A novel Heusler ferrimagnet Ti₂MnAl film has been grown on Si(001) substrate using magnetron sputtering. Characteristics of its magnetic and transport properties reveal the spin‐gapless‐semiconductor (SGS) nature of the stoichiometric Ti₂MnAl, in agreement with theoretical prediction. The as‐grown SGS‐like Ti₂MnAl film demonstrated high Curie temperature, nearly compensated ferrimagnetic properties with small coercivity and low magnetization. It also showed semiconductor‐like behavior at room temperature allowing good compatibility with commercial Si‐based semiconductor. In this regards, Ti₂MnAl film is a potential candidate material for spintronics application, especially for the minimization of energy consumption of device. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Orthorhombic Ti2O3: A Polymorph‐Dependent Narrow‐Bandgap Ferromagnetic Oxide

Magnetic semiconductors are highly sought in spintronics, which allow not only the control of charge carriers like in traditional electronics, but also the control of spin states. However, almost all known magnetic semiconductors are featured with bandgaps larger than 1 eV, which limits their applications in long‐wavelength regimes. In this work, the discovery of orthorhombic‐structured Ti₂O₃ films is reported as a unique narrow‐bandgap (≈0.1 eV) ferromagnetic oxide semiconductor. In contrast, the well‐known corundum‐structured Ti₂O₃ polymorph has an antiferromagnetic ground state. This comprehensive study on epitaxial Ti₂O₃ thin films reveals strong correlations between structure, electrical, and magnetic properties. The new orthorhombic Ti₂O₃ polymorph is found to be n‐type with a very high electron concentration, while the bulk‐type trigonal‐structured Ti₂O₃ is p‐type. More interestingly, in contrast to the antiferromagnetic ground state of trigonal bulk Ti₂O₃, unexpected ferromagnetism with a transition temperature well above room temperature is observed in the orthorhombic Ti₂O₃, which is confirmed by X‐ray magnetic circular dichroism measurements. Using first‐principles calculations, the ferromagnetism is attributed to a particular type of oxygen vacancies in the orthorhombic Ti₂O₃. The room‐temperature ferromagnetism observed in orthorhombic‐structured Ti₂O₃, demonstrates a new route toward controlling magnetism in epitaxial oxide films through selective stabilization of polymorph phases.