A Review of Surface Functionalized Amine Terminated Dendrimers for Application in Biological and Molecular Sensing

Dendrimers are three dimensional nanosized synthetic molecules that have internal cavities and numerous surface groups. In recent times they have received increased attention in sensing applications. For dendrimers to be used as sensors, they most commonly require functionalization at their surface. This is because the surface is generally the first point of contact between the dendrimer and the outside world, hence surface functionalization serves to selectively home in on the target analyte. Further, sensor signals may be transmitted through surface functionalities e.g. fluorochromic molecules. It is therefore important to document surface functionalization approaches. Dendrimers with amine surface groups have the advantage of being able to be conjugated to other molecules via an amide linkage, which is one of the most fundamental and widespread chemical bonds in nature. In this paper we demonstrate the properties of dendrimers that make them so applicable to sensing. We review several methods for functionalizing dendrimers via an amide linkage, as well as present a review of surface functionalized polyamidoamine, polyamine, and polypeptide dendrimers that have been employed for biological, chemical and molecular sensing.     

气相沉积法制备多孔ZnO薄膜及其光伏特性

通过气相沉积法, 在大气环境下退火, 制备了多孔ZnO薄膜. 这种多孔ZnO薄膜的制备方法具有成膜过程简单且工艺可精确控制等特点. 将多孔ZnO薄膜用胶体CdSe量子点来敏化获得太阳能电池, 具有1.01%的能量转换效率.     

不锈钢金属丝网上TiO2纳米薄膜光催化剂的研究

以钛酸正丁酯为原料,采用溶胶-凝胶法在金属丝网上制备了TiO2薄膜光催化剂.利用SEM,TEM,AES和Raman光谱研究了薄膜的表面及结构特性.以甲醛的光催化氧化反应为试验反应,考察了提拉次数、PEG浓度和焙烧温度对TiO2薄膜光催化剂活性的影响.将TiO2薄膜的结构特性与其光催化活性进行了关联.结果表明,在前驱体溶胶中加入10%PEG400,提拉3次并于400℃下焙烧可制得具有中孔结构和结晶完好的锐钛矿型TiO2薄膜,并具有最佳的光催化活性.     

取向PET薄膜偶极热松弛的研究

用纵拉、先纵后横、纵-横-纵等拉伸方式得到了各种平面取向程度的PET薄膜。短路热释电流温谱显示α峰随平面取向度增大向高温线性移动。被冻结的大分子主链链段偶极热松弛活化能随反式构象含量增大呈线性下降。热松弛时间常数则随反式构象含量增大而增长。     

Preparation and Properties of Doped Lanthanum Gallate Film on a Ni/SDC Porous Anode Support

IntroductionIn intermediate-temperature solid oxide fuel cells(SOFCs),doped ceria with a fluorite structure anddoped lanthanum gallate(LSGM)with a perovskitestructure are commonly used as electrolyte materials.However,the former easily exhibits an electro…     

Circular patterns of calcium oxalate crystals induced by defective Langmuir-Blodgett film

The injury of the renal epithelial cell membrane can promote the nucleation of nascent crystals, as well as adhesion of crystals on it. It thus accelerates the formation of renal calculi. In this paper, the defective Langmuir-Blodgett (LB) films were used as a model system to simulate the injured renal epithelial cell membrane. The microcosmic structure of the defective LB film and the molecular mechanism of the effect of this film on nucleation, growth, deposited patterns and adhesion of calcium oxalate monohydrate (COM) were investigated. The circular defective domains were formed in dipalmitoylphosphatidylcholine (DPPC) LB film after the film was treated by potassium oxalate. These domains could induce ring-shaped patterns of COM crystals. In comparison, the LB film without pretreatment by potassium oxalate only induced random growth of hexagonal COM crystals. As the crystallization time increased, the size of COM crystals in the patterns increased, the crystal patterns changed from empty circles to solid circles, and the number of the circular patterns with small size (5-20 μm) increased. The results would shed light on the molecular mechanism of urolithiasis induced by injury of the renal epithelial membrane at the molecular and supramolecular level.     

埋磁芯PCB产品研究开发

随着PCB行业发展步入系统封装(SOP)阶段,PCB无源器件隐埋技术也成当今研究的热点。我司的埋铜技术的研究已经较成熟,但是对于磁芯的埋入还没涉及过,而目前电源部分电感大都需要手工贴装,工作效率低,存在焊接焊点不良等风险,不利于产品设计小型、高密化,所以对在PCB中埋入磁芯的研究很有必要。在文章中,我们得出磁芯埋入的控制方法,使产品能够满足客户对电感的要求。     

用氧化多孔硅方法制备厚的SiO_2膜及其微观分析

用氧化多孔硅的方法来制备厚的 Si O2 成本低 ,省时 .氧化硅膜的厚度 ,表面粗糙度和组分这三个参数 ,对波导器件的性能有重要影响 ,扫描电子显微镜 ( SEM)、原子力显微镜 ( AFM)和俄歇分析得到 :氧化的多孔硅的膜厚已达 2 1 .2μm;表面粗糙度在 1 nm以内 ,Si和 O的组分比为 1∶ 1 .90 6.这些结果表明 ,用氧化多孔硅方法制备的厚 Si O2 膜满足低损耗光波导器件的要求     

半导体混合加工制程的虚拟量测方法

为提高经济效应,半导体加工制程变得越来越复杂,生产线上同时有不同规格的产品在混合加工,能够同时预测这些规格晶圆的最终品质对提高晶圆的生产良率有着重要的意义。本文针对这种混合制程,提出一种虚拟量测算法,在统计回归的基础上,找出影响制程的关键变量,考虑不同规格晶圆的产品效应,利用共变异数分析算法辨识出虚拟量测模型,线上测试结果表明,本文算法不仅可以精确的预测待加工晶圆的线宽,而且可以用于半导体加工制程晶圆的故障侦测。     

InSb/InAsSb Strained Layer Superlattice Grown by MBE

叙述了采用国产 MBE 装置,在 GaAs 或 InSb 衬底上生长 InSb,InAsSb薄膜材料一些基础研究工作。采用二步生长法在 GaAs 衬底上生长优质 InSb 薄膜,厚度4.8μm,其室温迁移率达到4.3×10~4cm~2V·s,载流子浓度为2.4×10~(18)cm~(-3),77K 时载流子浓度为7.49×10~(15)cm~(-3);并在生长各种类型 InAsSb 超晶格材料的基础上,首次生长了 InAs_(0·05)Sb_(0·95)/InSb 应变层超晶格结构材料,其周期厚度为21nm,InSb 应变层与 InSb 层之间的共格度为0.65,本文还将叙述制作 InAsSb 长波红外探测器的具体工艺及其一些想法。